[1] European Roadmap for PV R&D. European Commission Joint Research Center,2004EUR 21087EN
[2] G. Hanna, A. Jasenek, U. Rau, H.W. Schock, Influence of the
Ga-content on the bulk defect densities of Cu(In,Ga)Se2 , Thin Solid Films, Volume 387, Issues 1-2, 29 May 2001, Pages 71-73
[3] J.E Jaffe, A Zunger, Theory of the band-gap anomaly in ABC2 chalcopyrite semiconductors. Phys. Rev. B, 1984, 29:1882~1906.
[4] A. Romeo, M. Terheggen, D. Abou-Ras, et al. Development of thin-film Cu(In,Ga)Se2 and CdTe Solar Cells. Prog.
[5] B. Sang, L. Chen, M.Akhtar, et al, simplified hybrid process:
application to normal, sub-micro, and light-trapping CIGS devices, U. S. DOE Solar Energy Technologies Program Review Meeting, Denver, 2005.
[6] M.C. Joliet. , C. Antoniadis, R. Andrew, Laser-induced synthesis of thin CuInSe2 films. Appl. Phys. Lett., 1984, 46: 266-267
[7] L. D. Laude, M.C. Joliet, C. Antoniadis, Laser-induced synthesis of thin CuInSe2 films.Solar Cells, 1986, 16:199
[8] Brown B J, Chemical spray pyrolysis of copper indium
diselenide/cadmium sulfide solar cells, Stanford Universsity, 1989
[9] S. Sze and K. Ng, Physics of semiconductor devices: Wiley-Blackwell, 2007.
[10] D. Neamen, Semiconductor physics and devices: McGraw-Hill, Inc. New York, NY, USA, 2002.
[11] F.O. Adurodija, M.J. Carter, R. Hill, A novel method of synthesizing
86
p-CuInSe2 thin films from the stacked elemental layers using a closed graphite box: Proceeding of IEEE PVSC, Hawaii, 1994.
[12] T. Wada, N. Kohara, S. Nishiwaki, et al. Characterization of the Cu (In, Ga) Se2 /Mo interfaces in CIGS solar cells. Thin Solids Films, 2001, 387： 118~122.
[13] K. Orgassa, H.W. Schock, J.H. Werner. Thin Solids Films, 2003, 431,432： 387~391.
[14] D. Schmid, M. Ruckh, H.W. Schock. A comprehensive characterization of the interfaces in Mo/CIS/Cds/ZnO solar cell structures. Solar Energy Materials and Solar cells, 1996, 41/42： 281~294.
[15] A. Rockrtt, R.W. Birkmire, CuInSe2 for photovoltaic applications, J.
Appl. Phys, 1991, 70: R81-R97
[16] D. Rudmann, Effect of sodium on growth and properties of Cu(In,Ga)Se2 thin films and solar cells, Swiss Federal Institute of Technology
(ETH), 2004.
[17] B.J. Stanbery, Cooper indium selenides and related materials for photovoltaic device. Crit. Rev. Solid State, 2002, 27:73-117 [18] H. Neumann and R. D. Tomlinson, Relation between electrical
properties and composition in CuInSe2 single crystals Sol. Calls 28, 301 (1990).
[19] R. A. Mickelsen, W.S. Chen, Y.R. Hsiao, Polycrystalline thin-film CuInSe2/CdZnS solar cells, Proc. IEEE PVSC, Kissimmee, Florida, 1984.
[20] R.A. Michelsen, W.S. Chen, Proceedings of 7th International Conference on Ternery and Multinary Compounds, Snowmass, Colorado, 1986.
[21] D. Cahen, Some thoughts about ddefect chemistry in ternaries,
87
Proc. 7th Int. Conf. on Ternary and Multinary Compounds, Mater.
Res. Soc., Pittsburgh, p433-442, 1987 [22] S.M. Wasim,Sol. Cells 16, p289, 1986
[23] 楊德仁, 太陽能電池材料, 2 ed.: 五南圖書出版股份有限公司, 2009.
[24] J.H Yoon et. al, Optical diagnosis of the microstructure of Mo back contact for CIGS solar cell
[25] Q. Li, D. Zhuang, G. Zhang, C. Li, J. Song, Department of Mechanical Engineering, Tsinghua University Beijing 100084, China
[26] W. Liu, J.G. Tian, et al, Novel in situ resistance measurement for the investigation of CIGS growth in a selenization process, Semicond. Sci. Technol. 24 (2009) 035019
[27] H. K. Song, J. K. Jeong, et al, Fabrication of CuIn1-xGaxSe2 thin
film solar cells by sputtering and selenization process, Thin Solid Films 435 (2003) 186–192
[28] R. Birkmire, M. Engelmann, Chemical Kinetics and
Equilibrium Analysis of I-III-VI Films, Institute of Energy Conversion University of Delaware, Newark, DE 19716 USA [29]W. Liu, J.G. Tian, et al,In-situ electrical resistance
measurement of the selenization process in the CuInGa–Se system, Thin Solid Films 519 (2010) 244–250)
[30] S. Steven. Hegedus, N, William. Shafarman, Thin-Film Solar Cells:
Device Measurements and Analysis, Prog. Photovolt: Res. Appl. 2004; 12:155–176 [31] Rudmann, A. F. da Cunha, M. Kaelin, F. Kurdesau, H. Zogg, and A. N.
Tiwari ,Appl. Phys. Lett. Vol 84,7
[32] M.A. Contreras, et al, Preferred Orientation in Polycrystalline
Cu(In,Ga)Se2 and Its Effect on Absorber Thin-Films and Devices, May
88 2000 NREL/CP-520-28379
[33] C. Rincon, F.J. Ramirez, Lattice vibrations in CuInSe2 and CuGaSe2 by Raman spectroscopy, J. Appl. Phys. 72 (9), p4321 – 4324, 1992 [34] H. Tanino, T. Maeda, H. Fujikake, H. Nakanishi, S. Endo, T.Irie,
Raman spectra of CuInSe 2 , Phys. Rev. B 1 (23), p1323 – 1325, 1992 [35] H. Tanino, T. Maeda, H. Fujikake, H. Nakanishi, S. Endo and T. Irie
Raman spectra of CuInSe2 ,PHYSICAL REVIEW B Vol.45, NUMBER 23, 1992
[36] J. Łaz ˙ewski, H. Neumann, K. Parlinski, G. Lippold, B. J. Stanbery Lattice dynamics of CuAu-ordered CuInSe 2, PHYSICAL REVIEW
B 68, 144108, 2003
[37] E. Ahmed, A. E. Hill, R. D. Pilkington, R. D. Tomlinson, J.
Leppavuori, J. Levoska, O. Kusmartseva, W. Ahmed, A. Afzal,
Deposition and characterization of copper indium gallium diselenide films by laser ablation and flash evaporation for use in solar cells ,JOURNAL OF MATERIALS SCIENCE 32, p5611–5613, 1997
[38] H. Miyazaki, R. Mikamia, A. Yamadab, M. Konagaia,
Cu(InGa)Se2 thin film absorber with high Ga contents and its
application to the solar cells, Journal of Physics and Chemistry of Solids 64 (2003) 2055–2058
[39] H. Neumann, Lattice vibrations in AIBIIIC2VI
chalcopyrite compound,Helv. Phys. Acta p58, 337, 1985
[40] J. Parkes, R.D. Tomlinson, and M.J. Hampshire, J. Appl. Crystal- logr.
p6, 414, 1973
[41] H.W. Spiess, V. Haeberlen, G. Brandt, A. Ra ¨uber, and J.Schneider, Phys. Status Solidi B p62, 183, 1974
89
[42] J.M. Merino, J.L. Martin de Vidales, S. Mahanty, R. Diaz, and F.Rueda, J. Appl. Phys. p80, 5610, 1996
[43] H. Yamaguchi, Y. Kuwahara, H. Oyanagi, H. Nakanishi, and T.Irie, Jpn. J. Appl. Phys., Suppl. p32–3, 567, 1993
[44] B.J. Stanbery, S. Kincal, S. Kim, C.H. Chang, S.P. Ahrenkiel, G.Lippold, H. Neumann, T.J. Anderson, and O.D. Crisalle, J.
Appl.Phys. p91, 3598, 2002
[45] S.H. Wei, L.G. Ferreira, and A. Zunger, Phys. Rev. B p45, 2533, 1992 [46] R. Caballero, C. Guille´n, Structural and morphological properties
of Cu(In, Ga)Se2 thin films on Mo substrate, Applied Surface Science 238(2004) 180–183
[47]A. Virtuani, E. Lotter, and M. Powalla, et al, Influence of Cu content on electronic transport and shunting behavior of Cu„In,GaSe2 solar cells,J.
Appl.Phys.99,014906(2006)
[48]M. Gloeckler, A.L. Fahrenbruch, and J.R. Sites, NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS:SETTING THE BASELINE, 3rd World Conference on Photovolraic Enerby Conversion May 11-18.2003 Osokn. Japan [49] U. Rau, K. Taretto, S. Siebentritt, Grain boundaries in Cu(In,Ga)(Se,
S)2 thin-film solar cells, Appl Phys A (2009) 96: 221–234
[50] J.L. Gray, Handbook of Photovoltaic Science and Engineering, Steven Hegedus John Wiley & Sons Ltd, 2002
[51] http://www.kson.com.tw/chinese/study_23-8.htm
[52] T. Minemoto, et al, Theoretical analysis of the e!ect of conduction band o!set of window/CIS layers on performance of CIS solar cells using device simulation, Solar Energy Materials & Solar Cells 67 (2001) 83}88