On the basis of the developed numerical solution techniques,the following suggestions are given for the future work:
1. automatically generate the circuit nodal equations with modified nodal analysis in the net list formation, such as .ps file of SPICE, 2. in the MI algorithm, utilize vector and matrix forms for unknown
variables and linear/weak-nonlinear circuit elements,
3. accelerate the numerical solution methods by parallel computation techniques,
4. extend our method to more and newer semiconductor compact mod-els,
5. replace the NI related part of the numerical solution methods for RF steady-state circuit problems, such as frequency-domain HB method, with the MI algorithm, and
6. combine the nonlinear circuit solver and parameter extraction al-gorithm, such as GA, to develop new compact models for modern semiconductor devices.
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The MOSFET EKV Model
W
e describe the EPFL-EKV model in this appendix. EPFL-EKV MOSFET model is developed by the Electronics Laboratories, Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland [80]. It is a scalable and compact simulation model built on fundamental physical proper-ties of the MOS structure. This model is dedicated to the design and simulation of low-voltage, low-current, analog, and mixed single circuit using submicron CMOS technology. The EKV MOSFET model is in principle formulated as a single expression, which preserves continuity of first and higher-order deriva-tives with respect to any terminal voltage, in the entire range of validity of the model. The EPFL-EKV MOSFET model version 2.6 includes modelling of the following effects:1. basic geometrical and process related aspects such as oxide thickness, junction depth, and effective channel length/width,
151
2. effects of doping profile and substrate effect,
3. modelling of weak, moderate and strong inversion behaviors,
4. modelling of mobility effects due to vertical/lateral fields and velocity saturation,
5. short-channel effects such as channel-length modulation (CLM), source/drain charge-sharing (including for narrow channel widths), and reverse short channel effect (RSCE),
6. modelling of substrate current due to impact ionization,
7. quasi-static charge-based dynamic model,
8. thermal and flicker noise modelling,
9. a first-order non-quasistatic model for the transadmittances, and
10. short-distance geometry- and bias-dependent device matching.
The description concentrates on the intrinsic part of the MOSFET, and is intended to give model users the information on parameter handling and the actual equations used in the computer simulation. The extrinsic part of the MOSFET is handled as it is often made for other MOSFET models. The ex-trinsic model includes the series resistances of the source and drain diffusions, which are handled as external elements, as well as junction currents and ca-pacitances. The complete model can be found in [104].