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Chapter 3 Design of a 5.5 GHz CMOS Active Mixer

4.3 Chip Circuit Layout

Implementing analog and RF circuits is very difficult. Since the analog and RF of the layout will determine the analog and RF circuit performance. Even when all model parameters of the design are the same, changing he layout can totally change the performance of the circuit. Therefore, the circuit layout is an important topic, especially when the desired frequency is high.

Figure 4.11 shows a circuit layout with symmetric differential pair architecture.

The symmetric layout and differential circuit architecture can improve the circuit and help overcome parasitic mismatch. Perpendicular turns of the medal must be avoided:

for example, the in Fig. 4.12(b) is better than that in Fig. 4.12(a).

Fig. 4.11. On-wafer chip layout of mixer for symmetric layout

(a) (b) Fig. 4.12 Turning in layout of perpendicular

Chapter 5.

Measurement

The circuit must be designed to support measurement. For RF measurement, suitable instruments and testing are very important. The following section presents the mixer measurement results in the below.

5.1 Measurement Setup

In this circuit design is measure down-conversion mixer performance. The measurement function includes conversion gain, linearity, noise figure and power consumption. Figure 5.1 shows a testing circuit board for an off-chip circuit for IF performance measurement.

Fig. 5.1 Off-chip circuit and IF test board

5.1.1 Measurement Configuration

Three signal generators from 250kHz to 40 GHz are required for two-tone testing (IIP3). An Agilent E8257D ESG is employedto support signal generation. The

Agilent 8563E spectrum analyzer or Agilent Infinium oscilloscope is utilized to detect the IF output signal. The power combiner is the 2way-0° from Mini-Circuits.

OPA-695 is applied for single-end output signal measurement from IF signal output.

The IF output uses a high impedance to produce reasonable voltage gain. However, the standard impedance of the spectrum analysis is 50 Ω, which does not statisfy the

high impedance requirement. Two methods exist to solve this problem; (a) active probe (Agilent 85024A AT Probe). (b) oscilloscope impedance set to 1MΩ. Figure 5.2

shows the setup for down-conversion mixer performance measurement.

Power Combiner

E8257D

E8257D

BALUN RF DUT

BALUN LO

E8257D (On Board Circuit)

(On Board Circuit) (On Chip Circuit)

-+OPA-695

Spectrum Analyzer (Agilent 8563E)

or Oscilloscope (Agilent Infinium)

(On Board Circuit)

IF

Fig. 5.2 Down-conversion mixer measurement setup diagram

5.1.2 Noise Measurement

Figure 5.3 displays the noise figure measurement setup. The noise figure is measured using the Agilent N8975A Noise Figure Analyzer with a noise source. The RF port is connected to the noise source, whose frequency is set to that of the mixer output signal to be measured, while ESG E8257D provides an LO signal to execute down-conversion..

N8975A

NFA

BALUN

RF

DUT

BALUN

LO

E8257D (On Board Circuit)

(On Board Circuit) (On Chip Circuit)

-+

OPA-695

(On Board Circuit)

Noise Source

IF

Fig. 5.3 Noise Measurement Setup

Fig. 5.4 Instruments overview in RF measured laboratory

5.2 Measurement Results

This section presents the measurement results, including conversion gain, linearity of P-1dB, IIP3, power consumption and noise figure.

5.2.1 Conversion Gain Measurement

Figure 5.5 presents measured gain vs. input power. The measured result decays to around 13 dB. This root cause is PCB, and on board SMD components characteristic not match simulation parameters, such as LC tanks, Balun circuit.

ESG

Spectrum Analyzer

Power Supply

Oscilloscop

Mixer Testing Board.

Figure 5.6 plots the conversion gain performance vs. radio frequency.

the conversion gain v.s radio frequency sweeping.

Fig. 5.5 Measured gain v.s RF Power input (RF=5.501 GHz, LO=5.500 GHz@ LO=2.5

5.2.2 P-1dB/IIP3 Measurement

P-1dB is said 1-tone tested too. The authors’ laboratory has no AT probe with a

spectrum analyzer. Since the simulated IF output is measured with a resistance of 1MΩ , the spectrum analyzer impedance is 50Ω. Therefore, the oscillator is employed

to measure the conversion gain and P-1dB and IIP3, when the impedance is set to 1MΩ. To measure IIP3, the oscillator function FFT is adopted to obtained the output

signal spectrum. Figure 5.7 plots the measured IF output magnitude. Figure 5.8 plots the measured P-1dB. The linearity of P-1dB is approximately 2.5 dBm.

Fig. 5.6 Measured gain v.s RF input frequency (RF=0 dBm, LO=2.5 dBm, IF output is constant 1MHz)

The IIP3 is said that 2-tone tested too. Figure 5.9 shows the two-tone tested spectrum from the oscillator, and the RF spectrum. Figure 5.10 shows the linearity of IIP3, as displayed to Fig. 5.10. The linearity of IIP3 is approximately11 dBm.

Fig. 5.7 Measured IF output magnitude

Fig. 5.8 Measured P-1dB linearity curve.

Fig. 5.9 (a) Oscillator measured 2-tone test result. .

Fig. 5.9 (b) Agilent spectrum analyzer measured 2-tone test result.

Fig. 5.10 Measured IIP3 linearity curve by 2-tone test.

5.2.3 Noise Figure Measurement

The simulation and measurement of the noise figure of RF mixer circuit is very difficult. First, since the magnitude of the noise figure of the mixer is a function of the LO signal magnitude, this magnitude is the inverse of the output noise figure magnitude. Hence, the obtaining an accurate noise figure is very difficult. Second, the

noise figure analyzer provides only a single-ended measurement solution. Third, the NFA provides a loading impedance of 50 Ω instead of high impedance, with

inconsistence trouble. The limited frequency range of NFA is 10M~26.5GHz. Figure 5.10 presents the mixer noise figure obtained using NFA.

Fig. 5.11 Measured noise figure by NFA.

5.3 Summary

Table 5.1 presents the measurement results.

Table 5.1 Comparison between simulation and measurement results

29.624 dB 11 dBm 2.5 dBm

7.56 dB @ 0dBm 9.40 dB @ -20 9.5 mW

Measurement

26.55 dB 0.5 dBm 5.6 dBm

8.16 dB, RF_ in@ 0dBm 25.088 dB, RF in@

8.1 mW

Simulation Result

Single Side Band RF_In =5.501 GHz,

LO_In=5.5 GHz @2.5 dBm.

IIP3

P1dB (1MHz) Conversion Gain Power Consumption Item

Chapter 6.

Conclusion and Future Work 6.1 Conclusion

A 5.5 GHz receiver front-end mixer for IEEE WLNA 802.11a has been fabricated by 0.18 um RF CMOS technology. The measured performance of the mixer demonstrated a gain of 7.56 dB; IIP3 at 11 dBm, and the noise figure at 29.624 dB.

The simulation can predict that the parallel RC circuits applied in the IF output can improve mixer linearity in terms of IIP3 and P-1dB. This circuit can be working from 5GHz to 6.8 GHz.

The deviation suffered by the measurement compare with simulation such as lower conversion gain and higher noise figure is caused by the process shift, off-chip component mismatch and the model weakness in term of QFN package inductor and resistor equivalent circuit.

6.2 Future Work

The major challenge remained with this work is the deviation between simulation and chip measurement result. It is because that simulation accuracy is acceptable for on chip Balun and LC tank design; however, there is no qualified

simulation tool for Balun and LC tank design on PCB by the method SMD. One more problem is that the resistance due to process deviation will cause shift in power consumption.

The PCB layout can be improved by considering the characteristic wavelength of microstrip line. Regarding Balun circuits design, the replacement of conventional design using passive components by active components [19], [20] can improve this circuit performance, and reduce the size of the on-wafer chip circuit layout .

In Taiwan, there are many IC design houses with strong capability in digital circuit design. Therefore, base-band circuit is generally not a big problem for most of design houses. However, competitiveness in the wireless market depends on the single chip integration with base-band, VCO, PA, LNA, mixer and a filter. The end customers want a total solution from design house in terms of a complete design flow covering from system spec definition through chip design and then to total integration.

Bibliography

[1] IEEE Standard 802.11a-1999: Wireless LAN MAC and PHY Specifications -- High-speed Physical Layer in the 5GHz Band, New York, IEEE. 2000.

Internet address : http://ieeexplore.ieee.org/ie15/9543/30234/01389197.pdf

[2] Charles G. Sodini, VLSI for Wireless Communication, New Jersey, Prentice-Hall, 2002, Chapter 2.

[3] B. Razzavi, RF Microelectronics, New Jersey, Prentice-Hall, 1998, Chapters 5 and 6.

[4] T. Manku, G. Beck, and E.J. Shin, “A low-voltage design technique for RF integrated circuits,” IEEE Trans. Circuits and Systems II, vol. 45, pp. 1408-1413, Oct. 1998.(JUL)

[5] F. Mahmoudi, C.Ander, T.Salama, “8GHz, 1V, High linearity, Low Power CMOS Active Mixer,” in 2004 RFIC Symp. Proceedings, June 6-8 2004, pp.401-404.(Conference)

[6] S. Tanaka, F. Behbahani, and A. A. Abibi, ”A linearization technique for CMOS RF Power amplifier,” in IEEE VLSI Circuits Symp. Technical Digest, June 12-14 1997, pp. 93-94.

[7] B. Kim, J. Ko, and K. Lee, “A New Linearization Technique for MOSFET RF Amplifier Using Multiple Gated Transistors,” IEEE Microwave and Guide Wave Letters, Vol. 10, No.9, pp.371-373, 2000.

[8] John R. Long, “ Monolithic Transformers for Silicon RF Design,” IEEE Journal of Solid-State Circuits, Vol. 35, No. 9, pp.1368-1382, 2000.

[9] K. S. Ang, S. B. Economides, S. Nam, I. D. Robertson, “A Compact MMIC Balun Using Spiral Transformers,” in Asia Pacific Microwave Conference, Nov.30~Dec.3 1999, pp.655-658,

[10] W. Bakalski and W. Simburger, H. Knapp, H.D. Wohlmuth, A.L. Scholtz,

“Lumped and Distribute Lattic-Type LC-Baluns”, in IEEE Microwav Symp.

Technical Digest,. June.2-7 2002, pp.209-212.

[11] A. S. Sedra, K. C. Smith, Microelectronic Circuits, New York, Oxford University, 1998, Chapters 6 and 10.

[12] J. C. Rudell, J. J. Ou, T.B. Cho, G. Chien, F. Brianti, J. A. Weldon, P. R. Gary,

“A 1.9 GHz wide-band IF double conversion CMOS receiver for cordless telephone application,” IEEE Journal of Solid State Circuits, Vol. 32, pp.2071-2088, Dec. 1997,.

[13] Pierre H.Woerlee, Mathijs J. Knitel, Ronald van Langevelde, Dirk B. M.

Klaassen, Luuk F. Tiemeijer, Andries J. Scholten, and Adrie T. A. Zegers-van Duijnhoven, “RF-CMOS Performance Trends,” IEEE Trans. on Electron Devices, Vol. 48, No. 8, pp.1776-1782, Aug. 2001.

[14] P. Heydari, “High-Frequency Noise in RF Active CMOS Mixers,” in ASP-DAC Proceedings, 27-30 Jan. 2004, pp. 57-61.

[15] H. Darabi, A.A. Abidi, “Noise in RF-CMOS Mixers: A Simple Physical Model”, IEEE Joumal of Solid-State Circuits, Vol. 35, No.1, pp. 15-25, January 2000..

[16] TSMC 0.18 µm mixed signal 1P6M salicide 1.8V/3.3V RF spice models.

[17] D. Manstretta, M. Brandolini, F. Svelto, “Second-Order Intermodulation Mechanisms in CMOS Downconverters,” IEEE Journal of Solid-State Circuits, Vol. 38, pp. 394-406, Mar. 2003.

[18] Jacques C. Rudell, Jia-Jiunn Ou, Thomas Byunghak Cho, George Chien, Francesco Brianti, Jeffrey A. Weldon, Paul R. Gray, “A 1.9-GHz Wide-Band IF Double Conversion CMOS Receiver for Cordless Telephone Applications,”

1997.

[19] I. J. Lin, C. Zelley. 0. Boric-Lubecke, P. Goddl and R. Yan, "A silicon MMIC Active "A silicon MMIC active balun/buffer amplifier with high linearity and low residual phase noise," in 2000 IEEE MTT-S Intemational Microwave Symposium Din., vol. 3. pp.1289-1292

[20] H. Koizumi, S. Nagata, K. Tateokq K. Kanazawal and D. Ueda, "A GaAs Single balanced mixer MMIC with built-in active balun for personal communication systems," in IEEE Microwave and MiIIimeter- Wave Monolithic Circuifs Symposium, May.15-16 1995 pp. 77-80.

Vita

盧笙豐 Sheng-Feng Lu

Birthday: 1971/04/27

Birthplace:Hsin-ChuCounty, Taiwan Education:

1995/09 ~ 1997/06 B.S. Degree in Department of Electrical, National Taiwan University od Science

& Technology.

2002/09 ~ 2007/06 M.S. Degree in Department of Electronics Engineering & Institute of Electronics,

National Chiao Tung University

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