Measurement Result- Figure 2.6.1 shows the layout of the proposed QVCO fabricated in TSMC 0.18 μm RF CMOS 1P6M process. The chip sizes are 0.61 x 1.115 mm2. According to Fig. 2.6.3, the output frequency tuning range of the fabricated QVCO is 1.3-GHz ranging from 9.1 GHz to 10.4 GHz from the center frequency of 10.09 GHz at Vctrl which is 1.5V. Fig.2.6.2 (a) shows the phase noise of -115.7dBc/Hz at 1MHz offset at frequency 10.38GHz. The core current consumed 2.48mA from a 1.5V supply. The figure-of merit (FOM) characteristic is expressed as
( )
⎥⎥⎥Here, fo is the oscillation frequency of the VCO, fΔ is the offset frequency, and Psupply
is the power consumption. In order to compare with the recent published papers, the power-frequency-normalized figure of merit (FOM) is calculated. According to Table 1, the performance of the proposed QVCO is an excellent one for low-power topology compared with the reported results in the literature. FOM of the proposed QVCO is 190 db.
(b)
Fig 2.5.1 phase noise of the proposed QVCO
Fig 2.5.2 the power spectrum of the proposed QVCO.
Fig 2.5.3 the tuning rang of the proposed QVCO.
Chapter 3 Conclusions and Future Work
3.1 Conclusions
A low-power quadrature voltage-controlled oscillator using source injection parallel coupling (SIPC) technique and switching current source is demonstrated. This VCO adopts a cross-coupled negative-gm configuration since the structure offers higher trans-conductance for a given current, which results in fast switching of the cross-coupled pair. The advantage of switching current source technique can lower the power dissipation. Although power consumption can be decreased compared to the conventional QVCO topologies, it will increase the phase noise due to stacking switching transistors in series like a cascade. We also use the source injection coupling to improve the phase noise. Additionally, because of less coupling transistors used, the capacitance coupling can also lower the power dissipation. Based on measurement results, the power consumption of the core current is only 2.48mA. The measured phase noise, power consumption and carrier frequency is close to simulated.
Table 3-1 Comparison and Discussion
[1] Jong-Phil Hong, Seok-Ju Yun, Nam-Jin Oh, and Sang-Gug Lee,” A 2.2-mW Backgate Coupled LC Quadrature VCO With Current Reused Structure” IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 17, NO. 4, APRIL 2007
[2}Chan-Young Jeong, and Changsik Yoo,“5-GHz Low-Phase Noise CMOS
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[3]Sangsoo Ko, Jeong-Geun Kim, Taeksang Song, Euisik Yoon, and Songcheol Hong,
“K- and Q-Bands CMOS Frequency Sources With X-Band Quadrature VCO”, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 53, NO. 9, SEPTEMBER 2005
[4]Shenggao Li,Issy Kipnis,Mohammed Ismail,“A 10-GHz CMOS quadrature LC-VCO for multirate optical applications”,IEEE Journal of Solid-State Circuits, Octorber 2003.
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