The Impact of Substrate Resistance on Noise Parameters

Chapter 6 Millimeter-Wave Noise Characterization

6.4 Noise Parameter Characterization and Modeling

6.4.3 The Impact of Substrate Resistance on Noise Parameters

Reference [19] has considered the effect of substrate resistance (R ) on high-frequency _b noise modeling. The modeling results without considering the substrate resistance are also shown in Fig. 6-8. This figure shows, however, as compared to R , the substrate resistance _g

R has much smaller influence on noise parameters. To explain this, one can find that at very b

high frequency, the drain-side noise current’s PSD can be approximated by S_id S_ib, where

b B

ib k T R

S 4 is the noise current PSD for the substrate resistance. As shown in Fig. 6-11, based on the extracted values of R , _b S is about 1/10 of _ib S at the very high frequency _id and can be ignored. That is, in millimeter wave frequencies, the overall noise performance would be mainly dominated by S and _id R . _g

6.5 Summary

We have demonstrated the millimeter-wave noise characterization and modeling for 65nm MOSFETs based on the tuner method for the first time. Our experimental results show that with the continuous down scaling of channel length, the channel noise S would remain _id the dominant noise source in the intrinsic part of the device due to the serious channel length modulation, and can be predicted by the traditional thermal noise theory. The sharply increased S also degrades _id R . _n

Finally, the millimeter-wave noise modeling is achieved. With the help of circuit simulation, the impact of R and _g R on the noise parameters has been examined. _b Compared to R , _b R is shown to have more serious influence on the noise parameters, and _g should be included in the millimeter-wave noise modeling.

130

References

[1] C. H. Doan, S. Emami, A. Niknejad, and R. W. Broderson, “Millimeterwave CMOS design,” IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 144–155, Jan. 2005.

[2] N. Waldhoff, C. Andrei, D. Gloria, F. Danneville, and G. Dambrine, “Small signal and noise equivalent circuit for CMOS 65 nm up to 110GHz,” in Proc. 38th European Microw. Conf., Oct. 2008, pp 321-324.

[3] G. Dambrine, H. Happy, F. Danneville, and A. Cappy, “A new method for on-wafer noise measurement,” IEEE Trans. Microwave Theory Tech., vol. 41, pp. 375-381, Mar. 1993.

[4] S.-C. Wang, P. Su, K.-M. Chen, K.-H. Liao, B.-Y. Chen, S.-Y. Huang, C.-C. Hung, and G.-W. Huang, “Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications,” IEEE Trans. Microw. Theory Tech., vol.

58, no. 4, pp. 740–746, Apr. 2010.

[5] Semiconductor Device Thermal Noise Characterization Challenges, Auriga Measurement Systems, Lowell, MA 2007.

[6] Y. Tagro, D. Gloria, S. Boret, and G. Dambrine, “MMW lab in-situ to extract noise parameters of 65nm CMOS aiming 70-90GH applications,” in IEEE Radio Frequency Integrated Circuits Symposium, June. 2009, pp. 397-400.

[7] K. H. K. Yau, M. Khanpour, M.-T. Yang, P. Schvan, and S. P. Voinigescu, “On-die source-pull for the characterization of the W-band noise performance of 65nm general purpose (GP) and low power (LP) n-MOSFETs,” in IEEE MTT-S Int. Microwave Sym.

Dig., pp. 773-776, June 2009.

[8] G. Knoblinger, “RF-noise of deep-submicron MOSFETs: Extraction and modeling,” in Proc. Eur. Solid-State Device Res. Conf., 2001. pp. 331-334.

[9] S.-C. Wang, G.-W. Huang, K.-M. Chen, A.-S. Peng, H.-C. Tseng, and T.-L. Hsu, “A practical method to extract extrinsic parameters for the silicon MOSFET small signal model,” in Proc. NSTI Nanotechnol. Conf., Boston, MA, 2004, pp. 151–154.

[10] C. H. Chen, M. J. Deen, Y. Cheng, and M. Matloubian, “Extraction of the induced gate noise, channel noise and their correlation in sub-micron MOSFET’s from RF noise measurements,” IEEE Trans. Electron Devices, vol. 48, pp. 2884–2892, Dec. 2001.

[11] A. van der Ziel, Noise in Solid State Devices and Circuits. New York: Wiley, 1986.

[12] A. J. Scholten, L. F. Tiemeijer, R. Langevelde, R. J. Havens, A. T. A. Z.van Duijnhoven, and V. C. Venezia, “Noise modeling for RF CMOS circuit simulations,” IEEE Trans.

Electron Devices, vol. 50, pp. 618–632, 2003.

[13] A. F. Tong, W. M. Lim, K. S. Yeo, C. B. Sia, and W. C. Zhou, “A scalable RFCMOS Noise model, ” IEEE Trans. Microwave Theory Tech., vol. 57, no. 5, pp. 1009-1019, May 2009.

[14] S. Asgaran, M. J. Deen, and C.-H. Chen, “Analytical modeling of MOSFET’s channel noise and noise parameters,” IEEE Trans. Electron Devices, vol. 51, no. 12, pp.

2109–2114, Dec. 2004.

[15] J. J.-Y. Kuo, W. P.-N. Chen, and P. Su, “Investigation of analogue performance for process-induced-strained PMOSFETs,” Semicond. Sci. Technol., vol. 22, pp. 404-407, 2007.

[16] J. Jeon, J. Lee, J. Kim, C. H. Park, H. Lee, H. Oh, H.-K. Kang, B.-G. Park, and H.Shin,

“The first observation of shot noise characteristics in 10-nm scale MOSFETs,” in Sym.

VLSI Tech., pp. 48-49, 2009.

[17] J. Jeon, I. Song, I. M. Kang, Y. Yun, B.-G. Paark, J. D. Lee, and H. Shin, “A new noise

132

Table 6-1 Extracted intrinsic small-signal parameters that can benefit the characterization of the noise parameters. (V_GS 1.0V, VV_DS 1.2 )

μm) (

L R_i() g_m(mS) C_gs(fF) C_gd(fF) ( ps)

0.06 6.8 151.8 71.3 36.4 0.2

0.12 3.4 106.9 146.3 42.4 0.7

0.24 3 74.8 317.2 `47.6 1.2

0 10 20 30 40 50 60

Theoretical value, S

id=4k

BTg

S id (10-21 A2 /Hz)

(a)

(b)

(c)

134

Figure 6-2 RF noise equivalent circuit for the bulk MOSFET.

10 20 30 40 50 60

S igd* (10-21 A2 /Hz)

L

(a)

(b)

136

10 20 30 40 50 60 70 8090100

0 5 10 15 20 25 30

U and G

a,ass

(dB)

Frequency (GHz)

10 20 30 40 50 60 70 8090100

0 5 10 15 20 25 30

L= 0.24, 0.12, 0.06m

L= 0.24, 0.12, 0.06m U

Ga,ass

VGS = 1.0 V VDS = 1.2 V VGS = 1.0 V VDS = 1.2 V

L= 0.24m L= 0.12m

|H 21| ( d B)

Frequency (GHz)

L= 0.06m

Figure 6-4 Short-circuit current gain (|H₂₁|), unilateral power gain (U), and associated gain (G_a_,_ass) versus frequency.

50 100 150 200 250 300 1.00

1.05 1.10 1.15 1.20

VGS = 1.0 V VDS = 1.2 V

  S

/(4k

Tg

)

Gate Length, L (nm)

Figure 6-5 Noise factor  versus gate length.

138

0 10 20 30 40 50 60

0 1 2 3 4 5 6 7 8

V_GS = 1.0V V_GS = 0.8V

L = 0.24



m

L = 0.12



m

S

(10

-21

A

/Hz)

Drain Current, I

(mA)

L = 0.06



m

Figure 6-6 Extracted channel noises (symbols) and their theoretical values (lines) calculated using Equ. (6-2) versus drain current.

50 100 150 200 250 300 0.0

0.1 0.2 0.3 0.4 0.5

V_GS = 1.0V V_GS = 0.8V

S a turat ion Volt age, V

D,sat

(V)

Gate Length, L (nm)

Figure 6-7 Saturation voltage versus channel length.

140

impact of S_ig, the gate resistance and the substrate resistance on these noise parameters are also shown.

(a) (b)

(c) (d)

0.000 0.01 0.02 0.03 2

4 6 8 10

0 5 10 15 20

S

(



10

-21

A

/H z)

g

(

^

)

VGS = 1.0 V VDS = 1.2 V

L = 0.24m

L = 0.12m

R

n,int

(



)

L = 0.06m

Figure 6-9 S and _id R_n_,_int versus g . _m²

142

0 50 100 150 200 250 300 0

1 2 3 4 5

Gate R e sistance, R

(  )

Gate Length, L (nm)

Figure 6-10 Extracted gate resistance (R ) versus channel length. _g

0 50 100 150 200 250 300 0

50 100 150 200 250 300

0.0 0.1 0.2

Substr ate Resistance, R

(



)

Gate Length, L (nm)

S

/S

Figure 6-11 R and _b S_ib S_id versus gate length.

144

Chapter 7 Conclusion

In this dissertation, based on the traditional RF small-signal and noise framework, we have comprehensively investigated the RF noise characteristics for various kinds of MOSFETs fabricated in contemporary advanced process technologies. These devices include bulk MOSFETs, SOI MOSFETs [1][2], SOI DT MOSFETs [3][4], and tensile-strained MOSFETs [5]. To achieve this goal, we have tailored the traditional small-signal equivalent circuit to take into account the specific effects present in respective MOSFET devices. The corresponding approaches to the extraction of small-signal and noise parameters have also been well developed. For the first time, the temperature effect on the RF noise behaviors for each device has been investigated as well [6].

In Chapter 2, the need of considering the neutral-body effect on the RF SOI small-signal modeling has been demonstrated. Due to this SOI-specific effect, the traditional equivalent circuit for bulk MOSFETs and its corresponding parameter extraction methods have to be modified accordingly both in the extrinsic and intrinsic parts. Our measurement results have shown that the neutral-body effect may influence the output characteristics of RF SOI MOSFETs in the GHz regime. The anomalous S₂₂ and S₂₁ behaviors can also be predicted and captured using our proposed model.

In Chapter 3, we have investigated the noise characteristics for both the bulk and SOI MOSFETs. The channel noise S is found to decrease with increasing temperature due to _id lower channel conductance at higher temperature. However, this trend is not obvious for devices with channel length below 0.12μm. Compared to the bulk MOSFETs, the SOI devices own the larger noise factors. The inherent floating-body effect and self-heating effect may contribute to this phenomenon. Our experimental results also show that the SOI device has worse NF_min and R than the bulk counterpart due to its larger _n S and lower _id g . _m

In Chapter 4, the temperature dependences of RF small-signal and noise behaviors for the SOI DT MOSFET have been studied. In the attractive low VDD regime, g tends to _m increase with increasing temperature, and hence causes both f and _t f_max to have positive temperature coefficients. Besides, due to larger g at higher temperature, the channel noise _d₀

S also has a positive temperature coefficient in the low id VDD regime. In addition, compared to S , the much higher _id g towards the weaker inversion region can cause _m² R _n to have a negative temperature coefficient. Our study also indicates that in the low VDD regime, the large R has little impact on the temperature dependence of _b NF_min for the SOI DT MOSFET.

In Chapter 5, the high frequency noise behavior of the tensile-strained nMOSFET has been examined. The strained device presents larger S than the control device due to its _id enhanced mobility for a given bias point, while both the strained and control devices have the same temperature dependence of S . However, for a given DC power consumption, due to _id the enhanced trans-conductance, our experimental results show that the strained device has better NF_min and R than the control one. _n

In Chapter 6, we have demonstrated the millimeter-wave noise characterization and modeling for 65nm MOSFETs based on the external tuner method for the first time [7]. In the millimeter-wave frequency band, the channel noise S remains the dominant noise source _id in the intrinsic part of the device, and can still be well predicted by the traditional thermal noise theory. We also show that compared to the substrate resistance R , the gate terminal _b

146

References

[1] S.-C. Wang, P. Su, K.-M. Chen, C.-T. Lin, V. Liang, and G.-W. Huang, “On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs,” IEEE Microw.

Wireless Comp. Lett., vol. 17, pp. 364-366, May 2007.

[2] S.-C. Wang, P. Su, K.-M. Chen, C.-T. Lin, V. Liang, and G.-W. Huang, “Radio-frequency silicon-on-insulator modeling considering the neutral-body effect,” Jpn. J. Appl. Phys., vol. 47, no. 4, pp. 2087-2091, April 2008.

[3] S.-C. Wang, P. Su, K.-M. Chen, S.-Y. Huang, C.-C. Hung, G.-W. Huang,

“Radio-frequency small-signal and noise modeling for silicon-on-insulator dynamic threshold voltage metal–oxide–semiconductor field-effect transistors,” Jpn. J. Appl.

Phys., vol. 48, no. 4, pp. 04C041-1 - 04C041-4, April 2009.

[4] S.-C. Wang, P. Su, K.-M. Chen, K.-H. Liao, B.-Y. Chen, S.-Y. Huang, C.-C. Hung, and G.-W. Huang, “Temperature-dependent RF small-signal and noise characteristics of SOI dynamic threshold voltage MOSFETs,” IEEE Trans. Microw. Theory Tech., vol. 58, no. 9, pp. 2319–2325, Sep. 2010.

[5] S.-C. Wang, P. Su, K.-M. Chen, B.-Y. Chen, G.-W. Huang, C.-C. Hung, S.-Y. Huang, C.-W. Fan, C.-Y. Tzeng, and S. Chou, “Investigation of high-frequency noise characteristics in tensile-strained nMOSFETs,” IEEE Trans. Electron Devices, vol. 58, no. 3, pp. 895–900, Mar. 2011.

[6] S.-C. Wang, P. Su, K.-M. Chen, C.-T. Lin, V. Liang, and G.-W. Huang, ‘Temperature dependence of high frequency noise behaviors for RF MOSFETs,” IEEE Microw.

Wireless Comp. Lett., vol. 18, pp. 530-532, Aug. 2008.

[7] S.-C. Wang, P. Su, K.-M. Chen, K.-H. Liao, B.-Y. Chen, S.-Y. Huang, C.-C. Hung, and G.-W. Huang, “Comprehensive noise characterization and modeling for 65-nm MOSFETs for millimeter-wave applications,” IEEE Trans. Microw. Theory Tech., vol. 58, no. 4, pp. 740–746, Apr. 2010.

簡歷

姓名：王生圳性別：男

生日：中華民國六十五年十一月七日籍貫：台北縣

通訊地址：300 新竹市金山二十三街九十三號四樓之二學歷：

中學板橋高中 1992~1995

大學成功大學電機工程學系 1995~1999

碩士成功大學電機工程研究所 1999~2001

博士交通大學電子研究所 2004~2011

博士論文題目：

先進金氧半場效電晶體考慮溫度相依之高頻小訊號及雜訊特性分析

148

著作目錄

A. International Journal

1. S.-C. Wang, P. Su, K.-M. Chen, C.-T. Lin, V. Liang, and G.-W. Huang, “On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs,” IEEE Microw.

Wireless Comp. Lett., vol. 17, pp. 364-366, May 2007. (A 類期刊論文—SCI)

2. S.-C. Wang, P. Su, K.-M. Chen, C.-T. Lin, V. Liang, and G.-W. Huang,

“Radio-frequency silicon-on-insulator modeling considering the neutral-body effect,”

Jpn. J. Appl. Phys., vol. 47, no. 4, pp. 2087-2091, April 2008.

3. S.-C. Wang, P. Su, K.-M. Chen, C.-T. Lin, V. Liang, and G.-W. Huang, ‘Temperature dependence of high frequency noise behaviors for RF MOSFETs,” IEEE Microw.

Wireless Comp. Lett., vol. 18, pp. 530-532, Aug. 2008. (A 類期刊論文—SCI)

4. S.-C. Wang, P. Su, K.-M. Chen, S.-Y. Huang, C.-C. Hung, G.-W. Huang,

“Radio-frequency small-signal and noise modeling for silicon-on-insulator dynamic threshold voltage metal–oxide–semiconductor field-effect transistors,” Jpn. J. Appl.

Phys., vol. 48, no. 4, pp. 04C041-1 - 04C041-4, April 2009.

5. S.-C. Wang, P. Su, K.-M. Chen, K.-H. Liao, B.-Y. Chen, S.-Y. Huang, C.-C. Hung, and G.-W. Huang, “Comprehensive noise characterization and modeling for 65-nm MOSFETs for millimeter-wave applications,” IEEE Trans. Microw. Theory Tech., vol.

58, no. 4, pp. 740–746, Apr. 2010. (A 類期刊論文—SCI)

6. S.-C. Wang, P. Su, K.-M. Chen, K.-H. Liao, B.-Y. Chen, S.-Y. Huang, C.-C. Hung, and G.-W. Huang, “Temperature-dependent RF small-signal and noise characteristics of SOI dynamic threshold voltage MOSFETs,” IEEE Trans. Microw. Theory Tech., vol. 58, no.

9, pp. 2319–2325, Sep. 2010. (A 類期刊論文—SCI)

7. S.-C. WANG,P.SU,K.-M. Chen, B.-Y. Chen, G.-W. Huang, C.-C. Hung, S.-Y. Huang, C.-W. Fan, C.-Y. Tzeng, and S. Chou, “Investigation of high-frequency noise characteristics in tensile-strained nMOSFETs,” IEEE Trans. Electron Devices, vol. 58, no. 3, pp. 895–900, Mar. 2011.. (A 類期刊論文—SCI)

B. International Conference

8. S.-C. Wang, P. Su, K.-M. Chen, C.-T. Lin, V. Liang, and G.-W. Huang, “RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs,” in Proc. VLSI-TSA, Hsinchu, Taiwan, Apr. 2006, pp. 1-2. (研討會論文—國 際) (Oral Presentation)

9. S.-C. Wang, P. Su, K.-M. Chen, S.-Y. Huang, C.-C. Hung, V. Liang, C.-Y. Tzeng, G.-W.

Huang, “RF small-signal and noise modeling for SOI dynamic threshold voltage MOSFETs,” International Conference on Solid State Devices and Materials, Sep. 2008, pp. 414-415. (研討會論文—國際)

10. S.-C. Wang, P. Su, K.-M. Chen, S.-Y. Huang, C.-C. Hung, G.-W. Huang, “Temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage MOSFET,” in Proc. 4th European Microwave Integrated Circuits Conf., Sep. 2009, pp 69-72. (研討會論文—國際) (Oral Presentation)

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