This content has been downloaded from IOPscience. Please scroll down to see the full text.
Download details:
IP Address: 140.113.38.11
This content was downloaded on 28/04/2014 at 15:29
Please note that terms and conditions apply.
Epitaxy of Si1-xGex by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si2H6 and GeH4
View the table of contents for this issue, or go to the journal homepage for more 1995 Jpn. J. Appl. Phys. 34 L869
(http://iopscience.iop.org/1347-4065/34/7B/L869)