• 沒有找到結果。

EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4

N/A
N/A
Protected

Academic year: 2021

Share "EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4"

Copied!
4
0
0

加載中.... (立即查看全文)

全文

(1)

This content has been downloaded from IOPscience. Please scroll down to see the full text.

Download details:

IP Address: 140.113.38.11

This content was downloaded on 28/04/2014 at 15:29

Please note that terms and conditions apply.

Epitaxy of Si1-xGex by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si2H6 and GeH4

View the table of contents for this issue, or go to the journal homepage for more 1995 Jpn. J. Appl. Phys. 34 L869

(http://iopscience.iop.org/1347-4065/34/7B/L869)

(2)
(3)
(4)

參考文獻

相關文件

Complementary Metal Oxide Semiconductor Controlled Nucleation Thermal Deposition Complex Programmable Logic Device Central Processing Unit.. Chemical Vapour Deposition

Complementary Metal Oxide Semiconductor Controlled Nucleation Thermal Deposition Complex Programmable Logic Device Central Processing Unit.. Chemical Vapour Deposition

Complementary Metal Oxide Semiconductor Controlled Nucleation Thermal Deposition Complex Programmable Logic Device Central Processing Unit.. Chemical Vapour Deposition

chemical reaction by isotope selective laser activation chemical vapour deposition.. chemical warfare

We have presented a numerical model for multiphase com- pressible flows involving the liquid and vapor phases of one species and one or more inert gaseous phases, extending the

In this paper we establish, by using the obtained second-order calculations and the recent results of [23], complete characterizations of full and tilt stability for locally

In this paper we establish, by using the obtained second-order calculations and the recent results of [25], complete characterizations of full and tilt stability for locally

I am writing this letter because I want to make a new friend in another country.. Maybe you will come to Gibraltar