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Growth and Characteristics of a-Plane GaN on ZnO Heterostructure

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ECS Journal of Solid State Science and Technology, 2 (3) X1-X1 (2013) X1

2162-8769/2013/2(3)/X1/1/$31.00©The Electrochemical Society

Publisher’s Note: Growth and Characteristics of a-Plane GaN on

ZnO Heterostructure [J. Electrochem. Soc., 159, H290 (2012)]

Huei-Min Huang,aChin-Chi Kuo,aChiao-Yun Chang,aYuan-Ting Lin,aTien-Chang Lu,b Li-Wei Tu,band Wen-Feng Hsieha

aDepartment of Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan bDepartment of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

© 2013 The Electrochemical Society. [DOI:10.1149/2.022303jss] All rights reserved. Published January 15, 2013.

This article was published on January 12, 2012, with an incorrect affiliation designation for author Yuan-Ting Lin on page H290. The article was corrected online on November 14, 2012.

) unless CC License in place (see abstract).

ecsdl.org/site/terms_use

address. Redistribution subject to ECS terms of use (see

140.113.38.11

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