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以規則性粗化點改善發光二極體光取出效率之研究

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圖 4:砷化鋁鎵(AlGaAs)單異質紅光磊晶片的結構組成 圖 5:砷化鋁鎵 (AlGaAs)單異質紅光磊晶片的能帶圖Eg2 Eg1 p n ∆Ec ∆Ev p-GaAs p-Al0.37Ga0.63As n-Al0.65Ga0.35As ① ②③
圖 15:粗化蝕刻 1 分鐘不同粗化區的平均亮度增加比例
圖 28:5um 粗化點蝕刻 1 分鐘的 OM 影像(500 倍)
圖 30:3um 粗化點蝕刻 1.5 分鐘的 OM 影像(500 倍)
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