氫化物氣相磊晶之側向蔓延磊晶技術之研究

  

Investigation of the Epitaxial Lateral Overgrowth by Hydride Vapor

Phase Epitaxial Growth

88-2215-E009-038  87/08/0188/07/31
    !"#$%&'() HVPE *+ , SiO2 Mask -.(11 00)*/0/1 .23%456789:;%4<= >? 20@m/hr A-:98>? 50@m A-BCDE:FGH<I>J 120 cm2/VsK
LMN56OPQRS% 40/1.%4T6PUV23 %4 W

Lateral overgrowth (LOG) of GaN on the SiO2 mask along the (11 00) direction using the HVPE method was carried out to obtain a GaN thick film. The growth rate can be higher than 20@ m/hr, and the thickness can be higher than 50@m without cracking, and the carrier mobility can be higher than 120 cm2/Vs.

Keywords
 -  compound semiconductor, Selective epitaxial growth, Lateral overgrowth, Hydride vapor phase epitaxial growth

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A HVPE '*؊Cû, SiO2

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Ó567-%4: SiO2

Mask:ã, SiO₂ Mask-0/1 .%4: B(îï[îïó0/1 .%4Ó567a:B%œ5 679K ðXËòœ567, SiO2 Mask -.(11 2 0)*/0/1.23%4Ó SEM 0 ð:Zð>:567  SiO2 Mask:, SiO2 Mask-0/

1.%4%LKB567, (0001)Ó%4<=œ 70@m/hr:, (112 0)*/0/1.%4<=㜠3@m/hr:(0001)[(11 2 0)Xí*/Ó %4<=ijœ 23KZ
‰: !">:567,(11 2 0)*/Ó 0/1.%4}œ 3-D %4:› 3-D %4J<:J0/1.%4 <=:B(567 SiO2 Mask: , SiO2 Mask -0/1.%4%L K îï[îïó0/1. %4Ó567a:%œ567 9Ñ,A?‹:
øي!" Ë ‹'Kœ !"
¢£: !"#, SiO2-ì(1 1 00)*/Žî ïðñ:»$ÑÒK ðLËòœ567, SiO2 Mask -.(1 1 00)*/0/1.23%4Ó SEM 0 ð:Zð>:567  SiO2 Mask:, SiO2 Mask-0/

1.%4% 4%KB 567, (0001)Ó%4<=œ 34@m/hr:, (11 00)*/0/1.%4<=㜠31@m/hr:(0001)[(1 1 00)Xí*/Ó %4<=ijœ 1.1:&Xí*/ '%4<='()KZ
‰: !">:567,(1 1 00)*/Ó 0/1.%4e*'+, 3-D %4l X-%.*}:B/œ 2-D %4:›
>ª5650/1.%4Ó01 [%4Ó*/SeÉ2Ó34:BA (11 00)*/0/1.%4‹Í0Ó øÙ:Šš¹ HVPE '^/]iü|: >¹îï[îïó0/1.%4Ó5 67a:%œ56789:› 0/1.23 %4>´µ 567[ Al₂O₃“”Óó'}€:>e*56X 7›89:4u;<B=>˘%' DEK

A?ÚÛ@A SiO2 Mask:hB

Aè¼%éÂì(1 1 00)*/Žîï ðñ:A HVPE »$ÑÒ:!"> ‹[ SiO2 MaskVh'øÙ:¹567

a:%œÊ89:š›;œ 2-D %4:yˆ Morphology V~Co: ÏðmËòK ;%4<=[FGH<I'3 4ÏðMËò:~%4<=DE¯: ;FGH<IûV2'´µ:>p Fîï[îïó0/1.%4Ó56 7a¯:›%4<=:Þ

GHBÞ dislocationK~%4<=D E¯:,567IOJ'GHIK :BÞKL' dislocation:V2 M:&´µ567'FGH<IK œ NOGH<I[%4<=:>P )QRS%4'*+:Tä:ä´µ %4<=:UXV'567a: Š‹ÍW'IO:Óæü|% 4<=:A‹56789K
* +‹Ó89:;FGH<I>?  120 cm2/Vs:;8I>? 50@mK Møú !"#$%&'() HVPE *+ , SiO2 Mask -.(11 00)*/0/1 .23%456789:;FG H<I>? 120 cm2/VsA-:%4< =>? 20@m/hr A-:;8I>? 50 @m A-:BCûDEK›0/1. 23%4>´µ567[ Al2O3 “” Óó'}€:>e*56X7›89 :4u;<B=>˘%'DEKX Y'Z£&F_`Ï[DE567 98:BC(89DE:Š Y¹ 56789\] Al2O3“”K ^_`a

[1] T. Shibata, H. Sone, K. Yahashi. M. Yamaguchi. K. Hiramatsu, N. Sawaki, N. Itoh, J. Crystal Growth, 189/190(1998) 67-71.

[2] S. Nakamura, T. Mukai, M. Senoh, Appl. Phys. Lett. 64(1994) 1687. [3] S. Nakamura, M. Senoh, S.

Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J.Appl. Phys. 35(1996) L74. [4] S. Kurai, Y. Naoi, T. Abe, S. Ohmi, S.

Sakai, Jpn. J.Appl. Phys. 35(1996) 1637.

[5] A. Usui, H. Sunakawa, A.A. Yamaguchi, Jpn. J.Appl. Phys. 36(1997) 899.

[6] Y. Kato, S. Kitamura, K. Hiramatsu, N. Sawaki, J. Crystal Growth, 144(1994) 133. bðˆ ðX 567, SiO2 Mask-.(112 0) */0/1.23%4Ó SEM 0 ð SiO₂ 4
m 567 2@m LT-567 50nm Sapphire (0001) 3
m ð SiO2/567/Sapphire 0 ð

ðL 567, SiO2 Mask-.(11 00) */0/1.23%4Ó SEM 0 ð ðm ,?ÚÛ Mask -.(11 00)*/ 0/1.23%456789Ó ˆ Morphology ðM %4<=[FGH<I'3 4 0 20 40 60 80 100 5 10 15 20 25 Growth Rate (
m/hr) Mobility (cm2/Vs