氮砷銻化鎵/砷化鎵p-i-n元件特性研究

୯ҥѠ᡼εᏢႝᐒၗૻᏢଣႝηπำᏢࣴز܌

ᅺγፕЎ

Graduate Institute of Electronics Engineering College of Electrical Engineering & Computer Science

National Taiwan University Master Thesis

ේઈᎌϯㄿ/ઈϯㄿ p-i-n ϡҹ੝܄ࣴز

Studies on the properties of GaAsSbN/GaAs p-i-n devices

݅჏ࢫ Chia-Hung Lin

ࡰᏤ௲௤Ǻ݅੏໢ റγ Advisor: Hao-Hsiung Lin, Ph.D.

ύ๮҇୯ 99 ԃ 1 Д

January, 2010

I

ᇞᖴ

࿶ၸٿԃъӧᙍ຾অޑࣴز܌ፐำǴᡣךᏢಞډࡐӭޑ஑཰ޕ᛽ᆶ

ࣴزޑБݤǴၸำᗨฅࡐٌधǴՠࢂᕴᆉֹԋΑǶ२Ӄךाགᖴ໳

රᑫᕴ࿶౛ᆶߎӹύೀߏޑЍ࡭Ǵᡣךёа΋ᜐπբ΋ᜐ຾অǴ٠ གᖴӕ٣ӧךፎଷ΢ፐਔ዗Јޑᔅךೀ౛πբǶӆٰךाགᖴךޑ

ࡰᏤ௲௤݅੏໢റγǴନΑ௲Ꮴך஑཰ޕ᛽ѦǴӧࣴز΢Ψ๏ϒך ಒЈޑࡰᏤǴࡰЇך۳҅ዴޑБӛᝩុࣴزǴ٬ךૈ୼໩ճޑֹԋ Ꮲ཰ᆶፕЎǴ݅੏໢Դৣӧࣴز΢ޑ୲࡭ᆶᝄᙣޑᄊࡋࢂך܌ाᏢ ಞޑǴӆԛགᖴԴৣޑࡰᏤǶགᖴଭε໋ᏢߏӧፕЎ΢ޑ௲Ꮴᆶᔅ ԆǴ٬ளፕЎёа໩ճֹԋǶΨགᖴ׵ܱǵՙᏂᏢߏᆶ MBE ჴᡍ

࠻ޑӕᏢॺǴᖴᖴεৎǴ٬ךёа໩ճֹԋךޑᏢ཰Ƕ

ύЎᄔा

ҁጇፕЎޑࣴزЬᚒࣁઈϯㄿ/ේઈᎌϯㄿ౦፦ௗय़ p-i-n ϡҹޑᇙำ ᆶ੝܄ࣴزǶځύේઈᎌϯㄿϐૈሜࣁ 1.17-eV ٠ᆶઈϯㄿ୷݈඲਱

ϰଛǶךॺࣴزڀԖόӕේઈᎌϯㄿࠆࡋ(250ǵ500ǵ1000 ک 2000 nm) ޑϡҹӧόӕ዗ଏОచҹΠޑႝࢬႝᓸ੝܄Ƕ҂࿶዗ଏОޑϡҹӧ࣬

ӕႝࢬஏࡋ(0.05 A/cm²)ਔǴ໩ӛႝᓸᒿ๱ࠆࡋޑ෧ϿԶҗ 0.38 ΢ϲԿ 0.46ҷ੝ǴᡉҢድ඲ޑલഐᒿ๱ࠆࡋቚуԶ೴ᅌౢғǶXRD ޑϩ݋Ψ ᡉҢድ඲ቫޑ֡Ϭ܄ᒿࠆࡋޑቚуԶᡂৡǶךॺΨҗႫکႝࢬஏࡋჹ

ྕࡋޑᜢ߯؃ڗځࢲϯૈǴךॺว౜ࢲϯૈޑኧॶऊࣁૈሜޑ΋ъѰ ѓǴᡉҢϡҹޑႝࢬЬाࣁલഐൺӝႝࢬǶ዗ଏОࡕࢲϯૈౣ༾ᡂଯǴ ߄ Ң લ ഐ ൺ ӝ ႝ ࢬ ё ࿶ җ ଏ О ϒ а ׯ ๓ Ƕ ዗ ଏ О ࡕ ޑ ޑ ϡ ҹ ࿶ SiO2/SiN ໌ϯೀ౛ࡕǴӧ࣬ӕႝࢬஏࡋ(0.05 A/cm²)ਔǴႝᓸё΢ϲ 50~70 mVǴᡉҢ໌ϯೀ౛ёԖਏӦᓸڋલഐൺӝႝࢬǶ࿶җ໌ϯೀ౛

ϐࡕޑ p-i-n ϡҹӧ 42 ७ AM1.5G ϼ໚ኳᔕӀྍྣ৔ਔϼ໚ႝԣᙯඤ ਏ౗ёၲ 6.6%Ƕ

III

Abstract

We study the fabrication and the properties of GaAs/GaAs0.97Sb0.02N0.01

heterjunction diodes deposited on GaAs substrate. The energy gap of the GaAs_0.97Sb_0.02N_0.01 layer is 1.17 eV and lattice-matched to GaAs. For as-grown samples, the forward voltages at a current density of 0.05 A/cm² decreases from 0.46 to 0.38 V when the layer thickness of GaAs0.97Sb0.02N0.01 increases from 250 to 2000 nm, indicating that the increase of the GaAsSbN layer accompanying the defect generation. XRD result also shows that the thicker the layer the worse the homogeneity. In addition, the current is proportional to the perimeter instead of the area of the junction, suggesting that it originates from the recombination on the junction surface. From the Arrhenius plot of the saturation current, we found that the activation energy of the as-grown sample is close to half the energy gap of GaAs0.97Sb0.02N0.01, suggesting that the current is a defect recombination current. After thermal annealing, the activation energy increases, indicating the suppression of the surface recombination current.

Coating SiN and SiN/SiO2 passivation layers on the junction surface significantly reduces both the reverse and forward currents. The passivated GaAs/GaAs0.97Sb0.02N0.01 heterjunction shows an optimum conversion efficiency of 6.6% under 42 times of AM1.5G illumination.

Ҟ ᒵ

ᇞᖴ...I ύЎᄔा... II Abstract ... III Ҟᒵ...IV ߕ߄઩Ї...VI ߕკ઩Ї... VII

ಃ΋ക ׇፕ... 1

1.1 ࣬ᜢЎ᝘ ... 2

1.2 ፕЎࢎᄬ ... 5

ಃΒക ϡҹᇙբᆶໆෳس಍ ... 9

2.1 ኬࠔድ඲ԋߏ ... 9

2.2 ϡҹᇙำ ... 10

2.3س಍೛࿼ᆶໆෳ ... 17

ಃΟക ჴᡍ่݀ᆶ૸ፕ ... 25

3.1ᔈҔܭ p-i-n ϡҹϣϐේઈᎌϯㄿ୷ҁ੝܄ ... 25

3.2ႝࢬႝᓸ੝܄ ... 26

3.2.1҂ڙ዗ଏОϡҹϐႝࢬႝᓸ੝܄ ... 26

V

3.2.3ᡂྕໆෳསႝࢬႝᓸ੝܄ ... 29

3.2.4໌ϯೀ౛ჹསႝࢬႝᓸ੝܄ޑቹៜ ... 30

3.3ྣӀϐႝࢬႝᓸ੝܄ ... 30

ಃѤക ᕴ่... 44

ୖԵЎ᝘... 45ʳ ʳ

ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ

ߕ߄઩Ї

߄ 3.1 Ѥᅿ GaAsSbN ࠆࡋϐ p-i-n ϼ໚ႝԣ่ᄬ ... 32

߄ 3.2 όӕGaAsSbNࠆࡋᆶόӕMBE዗ଏОᇙำϐϡҹႫکႝࢬ ஏࡋޑࢲϯૈǴځύࢲϯૈൂՏࣁ eV... 32

߄ 3.3 C2539҂ڙၸ዗ଏОک໌ϯೀ౛ϐኬࠔǴᆶ҂ڙၸ዗ଏОу ΕΑ໌ϯೀ౛ϐኬࠔޑϼ໚ႝԣ੝܄کՍᖄႝߔ ... 33

VII

ߕკ઩Ї

კ 1.1 ъᏤᡏޑૈሜᆶ඲਱தኧკǶ ... 6

კ 1.2 ઈϯㄿϐᏤႝ஥(EM(k))ޑૈໆᆶ୏ໆᜢ߯аϷේϐ߳ज़ૈ໘ ENǶ E+(k)ک E-(k)ࣁ EM(k)ک ENૈ ஥ ϕ Ѿ ࡕ ޑ ཥ ૈ ஥ (band anticrossing model)ǶځύE-(k)ࣁGaAsNޑཥᏤႝ஥Ƕ ... 7

კ 1.3 AM1.5Gф౗ஏࡋᓎ᛼Ƕځύϩձ኱ҢΟௗय़୴᠄Ԅϼ໚ႝԣ ׷਑ϐ֎ԏݢࢤǶ٠኱ҢрGaAsSbNᔈҔܭӭௗय़ϼ໚ႝԣϡ ҹ΢ϐёૈ֎ԏᓎ᛼Տ࿼Ƕ ... 8

კ 2.1 p-i-nϡҹᇙำࢬำკǶ... 21

კ 2.2 p-i-n ϡҹ΢ຎკǴځύߎឦ፿Ӏय़ᑈ 12.8%Ƕ ... 22

კ 2.3 X’Pert PRO XRDໆෳس಍ϐҢཀკǶ ... 23

კ 2.4 ϼ໚Ӏྍኳᔕᐒໆෳس಍Ƕ ... 24

კ 3.1 GaAsSbN༧׷׷਑(C2535)کѤᅿόӕGaAsSbN֎ԏቫࠆࡋϐ p-i-nϡҹޑHRXRD่݀Ƕځύ຀ጕ೽ϩࣁ୏ᄊኳᔕ่݀Ǵ HRXRD᛼ጕ΢ޑfringingࢂ߄ቫ100-nmޑઈϯㄿ܌ठǶ .... 34

კ 3.2 Ѥᅿ҂ڙၸ዗ଏОೀ౛GaAsSbNࠆࡋޑϡҹ(a)଍ӛୃᓸསႝ ࢬႝᓸᜢ߯ᆶ(b)໩ӛୃᓸསႝࢬႝᓸᜢ߯Ƕ ... 35

კ 3.3 GaAsSbNࠆࡋࣁ(a)2000 nm(C2536) (b)1000 nm(C2537) (c)500 nm(C2538) (d)250 nm(C2539)ޑϡҹჹ዗ଏОਔ໔ϐ໩ӛୃ ᓸསႝࢬႝᓸᜢ߯Ƕ ... 36

კ 3.4 ѤᅿGaAsSbNࠆࡋ࿶ၸ60ϩដ዗ଏОೀ౛ӧόӕޑϡҹय़ᑈ:

1×10^-2cm²Ǵ4×10^-4 cm²(a)2000 nm(C2536) (b)1000 nm(C2537) (c)500 nm(C2538) (d)250 nm(C2539) ଍ӛୃᓸསႝࢬႝᓸᜢ

߯Ƕ... 37

კ 3.5 ѤᅿGaAsSbNࠆࡋ࿶ၸ60ϩដ዗ଏОೀ౛ӧόӕޑϡҹय़ᑈ:

1×10^-2cm²Ǵ4×10^-4 cm²(a)2000 nm(C2536) (b)1000 nm(C2537) (c)500 nm(C2538) (d)250 nm(C2539) ໩ӛୃᓸསႝࢬႝᓸᜢ

߯Ƕ... 38

კ 3.6 ѤᅿGaAsSbNࠆࡋ࿶ၸόӕ዗ଏОਔ໔ೀ౛ޑϡҹ(a)2000 nm(C2536) (b)1000 nm(C2537) (c)500 nm(C2538) (d)250 nm (C2539) ޑႫکႝࢬ Is ჹ዗ૈॹኧ(1/kT)բკǶ… ... 39

კ 3.7 C2539҂ڙ዗ଏОϐኬࠔӧค؈ᑈϟႝ׷਑аϷڙၸ໌ϯೀ

౛ϐϡҹ(a)଍ӛୃᓸک(b)໩ӛୃᓸޑསႝࢬႝᓸԔጕǶ .... 40

კ 3.8 C2539҂բ዗ଏОکค໌ϯೀ౛ޑϡҹϐྣӀႝࢬஏࡋႝᓸ

੝܄Ƕ ... 41

კ 3.9 C2539҂բ዗ଏОکуΕΑ305-nm SiNϐ໌ϯೀ౛ࡕޑϡҹ ϐྣӀႝࢬஏࡋႝᓸ੝܄Ƕ ... 42

კ 3.10 C2539҂բ዗ଏОکуΕΑ305-nm SiN/ 400-nm SiO2ϐ໌ϯ

ೀ౛ࡕޑϡҹϐྣӀႝࢬஏࡋႝᓸ੝܄Ƕ ... 43

1

ಃ΋കʳ ׇፕ

߈ԃٰǴե֖ේޑΟϖ௼ϯӝނъᏤᡏ(ᙁᆀ III-V-N)ςЇଆቶݱ ޑࣴزᑫ፪Ƕේϯނسӈ࣬ᜢ׷਑ޑݢߏ఼ᇂጄൎхࡴ๋ѦӀǵ๋

ӀǵᙔӀǵᆘӀǵआӀǴࣗԿआѦӀǴԶϡҹ߾хࡴଯߝࡋวӀΒཱུ

ᡏǵъᏤᡏႜ৔ǵӀୀෳᏔǵϼ໚ૈႝԣаϷଯф౗ႝηϡҹǶკ 1.1 ࣁ III-V ௼ϯӝނъᏤᡏϐૈሜᆶ඲਱தኧᜢ߯კǶե֖ේъᏤᡏ

׷਑ڀԖӵΠޑ੝܄:໺಍ޑъᏤᡏ׷਑ӧуΕේࡕǴේޑૈሜ཮ᆶ ъᏤᡏ׷਑ޑᏤႝ஥Ҭᒱ຾ԶౢғϕѾϩ຋׎ԋ΢Πٿঁૈ஥Ƕҗܭ ъᏤᡏޑႝ਻ᆶӀᏢ੝܄ࣁᏤႝ஥ᜐጔǴΨ൩ࢂ΢ॊၨեૈ஥ᜐጔǴ ޑ܄፦܌ЬᏤǴӢԜ໺಍ޑъᏤᡏ׷਑ӧуΕ༾ໆޑේϐࡕջ཮วғ

ܴᡉޑૈሜᕭ෧Ǵ೭ঁ౜ຝࢂӢࣁܭේচηޑচηЁκၨځдъᏤᡏ চηλ(N:0.6 ষ)ЪڀԖၨεޑႝηᒃکΚǴӢԶᏤठѮεޑૈሜ៻

Ԕਏᔈ (bowing effect)ठ٬׷਑ޑૈሜᡂλ[1]ǶځԛǴӧуΕේ٬ૈ

ሜᕭ෧ޑӕਔǴե֖ේъᏤᡏ׷਑ޑ඲਱தኧΨ཮ӕਔᕭ෧(კ 1.2)Ƕ Ԝ౜ຝҭӧ GaAsN[2]ǵInGaAsN[3]ک GaAsSbN[4]฻׷਑س಍ύᢀჸ ډǶ൩ൂ΋ GaAsN ׷਑ԶقǴځૈሜёҗ๋ѦӀ(ҥБس-GaN :3.2 eV)

఼ᇂډआӀ(GaAs:1.4 eV)ǶࡺӧӀႝሦୱǴڀԖቶݱᔈҔޑወΚǶฅ Զ൩඲਱தኧᢀᗺٰ࣮Ǵа GaAsN ΟϡϯӝނࣁٯǴේᆶځѬޑচ

ηКଆٰλࡐӭǴGaN ᆶ GaAs ࢂόϰଛࡋ࣬ৡऊ 20 %Ǵ܌аኬࠔ ޑ֖ේໆཇଯǴཇ৒ܰᏤठ GaAsN ׷਑ӧԋߏਔౢғεໆޑֽ೽ᔈ ᡂ৒ܰౢғલഐǴࣗԿᝄख़ډวғ࣬ϩᚆ౜ຝǴ೭ஒ೷ԋኬࠔޑӀᏢ

੝܄ε൯ᡂৡǶᗨฅόӕࣴزဂճҔόӕޑԋߏמೌǴ೸ၸჹߏ඲చ ҹޑന٫ϯ၂კᗉխԜ౜ຝޑวғǴՠᄒԿҞ߻ࣁЗ೿คݤᕇளᆶ໺

಍ό֖ේ׷਑࣬྽ޑଯࠔ፦ III-V-N ድ඲ኬࠔǶќ΋Бय़Ǵ೸ၸ዗ଏ О(anneal)ೀ౛аׯ๓׷਑੝܄ޑࣴزςԖ࣬྽ΦޑᐕўǴࡺന߈Ԗ ࡐӭޑࣴزဂ[4-5]όऊԶӕӦஒ዗ଏОೀ౛ݤᔈҔӧ III-V-N ׷਑Ǵ ჴᡍ᛾ܴ዗ଏОೀ౛ዴჴૈׯ๓ III-V-N ׷਑ޑӀᏢ੝܄Ƕ

1.1 ࣬ᜢЎ᝘

ډҞ߻ࣁЗǴե֖ේޑ III-V-N ϯӝނъᏤᡏࣴزനӭޑ׷਑ࣁ InGaAsNǴځനεޑ੝ᗺӧܭૈ୼ܭ GaAs ୷݈΢ԋߏǶԜ׷਑೏ቶ ݱޑࣴزܭ p-i-n ޑӀୀෳᏔᆶϼ໚ႝԣ΢Ǵե֖ේ׷਑ӀୀෳᏔᆶ ϼ໚ႝԣύЬाࢂफ़եૈሜǴ٬ளϡҹёаᔈҔӧ׳ߏޑݢߏ΢Ǵа ቚуϡҹޑᡫ௵܄ᆶ֎Ӏݢࢤǹӵ W. K. Loke ฻Γ[6]܌ගр่ᄬࣁ p-GaAs/i-GaInNAsSb/n-GaAsǴёளډᄒЗݢߏࣁ 1.35 PmǴૈሜࣁ 0.92 eVǴ඲਱όϰଛࣁ 0.048%Ǵ࿶ၸ 750 ^oCǴ࡭ុ 1 ϩដ዗ଏОޑӀୀ

3

0.05 A/cm²ਔႝᓸࣁ 0.2 ҷ੝Ǵࢲϯૈࣁ 0.39 eVǶӵ Naoya Miyashita

฻Γ[7]܌ගр่ᄬࣁ p-GaInP/p-GaAs/i-GaInNAs/n-GaInNAsǴёளډ

ૈሜࣁ 1.0 eV Ԗ MgF2לϸ৔ቫ(anti-reflection coating)ޑ౦፦ࣚय़Ս

ௗԄϼ໚ႝԣǴϡҹޑ໒ၡႝᓸ(Voc)ࣁ 0.73 ҷ੝Ǵอၡႝࢬஏࡋ(Jsc) ࣁ 22.57 mA/cm²Ǵ༤кӢη (Fill Factor, FF)ࣁ 0.68Ǵᙯඤਏ౗ࣁ 11.27

%ǹ ऩ p-GaInP/ p-GaAs /i-GaInNAs/n-GaAs Ǵ Ԗ MgF2 ל ϸ ৔ ቫ (anti-reflection coating)ޑӕ፦ࣚय़ՍௗԄϼ໚ႝԣǴ໒ၡႝᓸ(Voc)ࣁ 0.31ҷ੝Ǵอၡႝࢬஏࡋ(Jsc)ࣁ 14.16 mA/cm²Ǵ౛གྷӢኧ(FF)ࣁ 0.68Ǵ ᙯඤਏ౗ࣁ 2.94 %ǶGaAsSbN ׷਑ӧӀୀෳᏔϡҹᔈҔ΢Ǵӵ S.

Fedderwitz ฻Γ[8]܌ගр่ᄬࣁ p-GaAs/i-GaAsSbN/n-GaAsǴёளډ ᄒЗݢߏࣁ 1.3PmǴૈሜࣁ 0.9 eV ޑଯೲӀୀෳᏔϡҹǴ଍ӛୃᓸ 2 ҷ੝ਔႝࢬஏࡋࣁ 4×10^-3 A/cm²Ǵ໩ӛୃᓸӧ 0.05 A/cm²ਔႝᓸࣁ 0.45 ҷ੝Ƕ

ե֖ේޑ GaAsSbN ӧ౦፦ᚈௗय़ႝ඲ᡏϡҹᔈҔ΢ǴЬाࢂफ़ ե୷ཱུޑૈሜǴ຾Զफ़եϡҹޑᏤ೯ႝᓸǴ٬ளϡҹёаᏹբӧ׳ե ޑπբႝᓸǴаफ़եૈໆޑཞ઻ǹӵ K. L. Lew ฻Γ[9]܌ගр่ᄬࣁ AlGaAs(E)/GaAsSbN(B)/GaAs(C)౦፦ᚈௗय़ႝ඲ᡏϡҹǴϡҹ৔ཱུय़ ᑈࣁ 40 ȝm×40 ȝmǴځᏤ೯ႝᓸӧႝࢬ 0.63 A/cm² ਔК໺಍ޑ GaAs(E)/GaAsNSb(B)/GaAs(C)౦፦ᚈௗय़ႝ඲ᡏϡҹե 0.18 ҷ੝Ǵ

ёளډϡҹޑᏤ೯ႝᓸࣁ 0.97 ҷ੝Ǵႝࢬஏࡋӧ 0.05 A/cm²ਔႝᓸऊ ࣁ 0.8 ҷ੝Ǵ౛གྷӢη ncࣁ 1.21Ǵനεޑႝࢬቚ੻ࣁ 8.5ǹ࿶ၸ 650^oCǴ

࡭ុ 1 ϩដ዗ଏОࡕǴёளډϡҹޑᏤ೯ႝᓸࣁ 1.08 ҷ੝Ǵႝࢬஏ ࡋӧ 0.05 A/cm²ਔႝᓸऊࣁ 0.92 ҷ੝౛གྷӢη ncࣁ 1.17Ǵനεޑႝ

ࢬቚ੻ࣁ 20ǶK. L. Lew ฻Γ[10]ӧ 2006 ԃΨԋමගр่ᄬࣁ GaAs(E)/GaAsSbN(B)/GaAs(C)౦፦ᚈௗय़ႝ඲ᡏϡҹǴϡҹ৔ཱུय़ᑈ ࣁ 40 ȝm×40 ȝmǴᏤ೯ႝᓸӧႝࢬஏࡋ 0.63 A/cm² ਔК΋૓ޑ InGaP(E)/GaAs(B)/GaAs(C)౦፦ᚈௗय़ႝ඲ᡏϡҹե 0.19 ҷ੝Ǵёள ډϡҹޑᏤ೯ႝᓸࣁ 0.89 ҷ੝Ǵႝࢬஏࡋӧ 0.05 A/cm²ਔႝᓸऊࣁ 0.81ҷ੝Ǵ౛གྷӢη ncࣁ 1.17Ǵനεޑႝࢬቚ੻ࣁ 3Ǵҗܭႝࢬቚ੻

ᇻλܭ΋૓ޑ InGaP HBT (>80)ޑႝࢬቚ੻ǴᡉҢ GaAsSbN ௗय़ޑൺ ӝႝࢬࡐεǴGaAsSbN ௗय़ϝԖࡐεޑׯ๓ޜ໔Ƕ

GaAsSbN ࣁҁጇፕЎ܌ाࣴزϐե֖ේΟϖ௼ъᏤᡏ׷਑Ƕന Ԑӧ 1999 ԃ೏ගр፾ӝӧ GaAs ୷݈΢ԋߏߏݢߏޑӀႝϡҹ[11]Ƕ ӵӕ InGaAsNǴGaAsSbN Ψёԋߏᆶ GaAs ୷݈඲਱தኧϰଛޑድ

඲ቫǴ٠ёᇙբӀୀෳᏔکӭௗय़ϼ໚ૈႝԣ(კ 1.3)฻ድ඲ቫၨࠆ ޑϡҹᔈҔǶԜѦҗܭ GaAsSbN ޑ໺Ꮴ஥کሽႝ஥ૈໆՏ࿼ёϩձ җ N ک Sb ፓᡂ[12, 13]ǴӢԜ GaAsSbN Ψ೏ᔈҔӧ HBT ΢Ƕ

5

1.2 ፕЎࢎᄬ

ҁጇፕЎԑӧ௖૸GaAsSbN׷਑ޑႝࢬႝᓸ੝܄ǴಃΒകϟಏϡ ҹޑᇙբᆶໆෳǴಃΟകаόӕ዗ଏОᇙำᆶ໌ϯೀ౛ޑϡҹϐསႝ

ࢬႝᓸ੝܄ᆶኳᔕϼ໚ӀྍΠྣӀޑႝࢬႝᓸ੝܄଺௖૸ǴಃѤകࣁ

่ፕǶ

4.5 5.0 5.5 6.0 6.5 7.0 0.0

0.5 1.0 1.5 2.0 2.53.3 3.4 3.5

AlP AlAs

AlSb GaN

GaP

GaAs

InN GaSb

InP

InAs

InSb Ge

Si

InAsN

Energy Gap (eV)

Lattice Constant

ʻ

ʼ

L.M. GaAsSbN InGaAsN

GaAsN

კ 1.1 ъᏤᡏޑૈሜᆶ඲਱தኧᜢ߯კǶ

7

კ 1.2 ઈϯㄿϐᏤႝ஥(EM(k))ޑૈໆᆶ୏ໆᜢ߯аϷේϐ߳ज़ૈ

໘ ENǶE+(k)ک E-(k)ࣁ EM(k)ک EN ૈ஥ϕѾࡕޑཥૈ஥(band anticrossing model)Ƕځύ E-(k)ࣁ GaAsN ޑཥᏤႝ஥Ƕ

400 600 800 1000 1200 1400 1600 1800 0.0

0.5 1.0 1.5 2.0

Spectral Irradiance ʻW-m-2 -nm-1 ʼ

Wavelength (nm)

AM1.5G solar spectrum In_0.5Ga_0.5P

Ge (In)GaAs

GaAsSbN

კ 1.3 AM1.5G ф౗ஏࡋᓎ᛼Ƕځύϩձ኱ҢΟௗय़୴᠄Ԅϼ໚

ႝԣ׷਑ϐ֎ԏݢࢤǶ٠኱Ңр GaAsSbN ᔈҔܭӭௗय़ϼ໚ႝ

ԣϡҹ΢ϐёૈ֎ԏᓎ᛼Տ࿼Ƕ

9

ಃΒക ϡҹᇙբᆶໆෳ

2.1 ኬࠔድ඲ԋߏ

ҁ ፕ Ў ܌ Ԗ ޑ ኬ ࠔ ࣣ җ VG-V80H ਻ ᄊ ྍ ϩ η ״ ድ ඲ ᐒ Ѡ (GSMBE)܌ԋߏǴӧъ๊ጔ(100)Бӛޑઈϯㄿ୷݈ԋߏ GaAsSbN ༧

׷׷਑Ǵԋߏೲࡋࣁ 1 ȝm/hrǶㄿϩη״җ EPI SUMO cell ගٮǴઈ(As2) ϩη״߾җ΋ Gas K-cell ගٮǴӃஒ਻ᡏ AsH3ࢬΕ Gas cell ޑ PBN ᆅǴ࿶җځλϾᅅΕଯ੿ޜޑ຋ှ୔ӧ 1000 qC Π຋ှԋ As2ᆶ H2Ƕ Sb җ΋ EPI Sb cracker cell ගٮǴҗ base zone ϐྕࡋ௓ڋ Sb4ޑϩη

״೯ໆǴӆ೯ၸ 1050qC ޑଯྕ຋ှ୔ࡕ׎ԋ Sb Ϸ Sb2ϩη״Ƕේྍ

߾җ EPI uni bulb RF plasma cell ගٮǴճҔ৔ᓎႝዀஒේϩη຋ှౢ

ғڀଯࢲ܄ޑේচη٠ୖᆶԋߏǴᙖҗፓᡂේ਻ࢬໆک৔ᓎႝዀྍф

౗ёፓ᏾຋ှਏ౗Ǵ௓ڋድ඲ቫޑේԋϩǶ඲ТӃа⥲ౌӧ✘༝݈

΢Ǵӆ຾Εԋߏ๚ᡏϣǶܭԋߏ๚ϣޑԋߏၸำӵΠǴ२Ӄஒ඲Тϲ

ྕԿ 600 °C మନ߄य़ޑ਼ϯނǴϐࡕஒྕࡋफ़ډ 595 °C ԋߏ GaAs

጗ፂቫऊ 100 nmǴ٬඲Т߄य़ޑѳ᏾ࡋၲډচηЁκቫભǴճҔϸ

৔Ԅଯૈႝηᙅ৔კਢ(RHEED patten)ղᘐ߄य़ѳ᏾ࡋǴԋߏֹ GaAs

጗ፂቫংёளډమཱޑ 2×4 RHEED pattenǶനࡕஒ୷݈ྕࡋफ़ډႣۓ ޑྕࡋ຾Չ GaAsSbN ቫԋߏǶ඲Т߄य़ྕࡋҗ pyrometer ໆෳǶ

2.2 ϡҹᇙำ (΋) ᑃѳ

ኬࠔङय़୷݈ࡕԖ΋ቫ⥲(In)ǴځբҔࢂܭԋߏ่ᄬਔǴගٮᗹ

๱ኬࠔܭၩѠ(holder)ϐ΢ǴϷ֡ϬᏤ዗ޑਏ݀Ƕҗܭ⥲ᅙᗺѝԖ157 ºCǴӧ৾ଆኬࠔਔǴ⥲ϝ҂ևֹӄڰᄊǴࡺङय़ޑ⥲հࠅࡕ཮псό ѳǶኬࠔпсόѳ཮ᏤठӀߔ༡թᐒϷᚼӀᐒคݤ֎ߕЇଆᚼӀό

ྗǴЪӧᚼӀcontactਔஒ཮೷ԋኬࠔ࿗຋ǶନΑճҔࣳર600 ဦᑃѐ ኬࠔङय़⥲Ǵᗋё٬Ҕ༝ᓐόឌᒳ֨࿼ኬࠔܭޖ඲༝΢Ǵу዗Կ⥲ᅙ ϯǴᇸᇸܦ܎٬⥲ᅙϯܭޖ඲༝΢Ƕ

(Β) మࢱ

ҔЧ✉(Acetone)ǵҘᎇ(Methanol)کѐᚆηН(D.I. Water)మࢱኬ ࠔ߄य़ǴҞޑࢂό׆ఈኬࠔ΢ޑᗭಈ೷ԋ໔ሜᏤठᚼӀౢғᇤৡǴᗋ Ԗዴߥߎឦૈ໩ճᗓ΢ኬࠔǶЧ✉ࣁཱུ܄ԖᐒྋᏊǴݦᗺࣁ56.2 ºCǴ ёྋှεӭኧޑݨિ܈ᐋિǹҘᎇҭࣁཱུ܄ԖᐒྋᏊǴݦᗺࣁ64.8 ºCǴբҔࣁࢱѐЧ✉ǹനࡕӆҗѐᚆηНࢱѐҘᎇϷූ੮ޑྋᏊǶЧ

✉ϷҘᎇࣣё೸ၸҜጥࣁΓᡏ܌֎ԏǴჴᡍਔ໪ऀᔎऐԖᐒЋ঺Ϸٛ

ࢥय़࿽Ǵ٠ߥ࡭೯॥ؼӳǴᗉխ֎ΕΓᡏ೷ԋ໾্ǶҗܭЧ✉کҘᎇ

11

य़ޑྋᏊזೲචวᚇ፦݋р੮Ӹܭ߄य़΢Ǵाݙཀኬࠔ΢όёߥ੮Н ᅄޑ౩ၞǴаխቹៜӀߔޑ༡թǶനࡕܫ࿼ӧ዗ѳय़΢20ࣾដǴѐନ

֎ߕӧኬࠔ߄य़΢ޑᔸ਻ǶԜ؁ᡯ่״ࡕǴѸ໪ӃՉհࠅኬࠔԿ࠻ྕ

ӆ༡թӀߔǴаᗉխኬࠔӧଯྕ௽ᙯ༡թਔǴӀߔϣޑྋᏊචวೲ౗

ၸז,Ꮴठᗹᅉ܄ׯᡂೲ౗ၸזǴ೷ԋኬࠔ߄य़ޑࠆࡋϩѲό֡ϬǶ

(Ο) ӀᏢ༾ቹ

ӀᏢ༾ቹ(photolithography)ࢂӧኬࠔ΢ۓကკਢ܈ႝၡޑБݤǴ εठ΢ёϩࣁ༡թӀߔǵᚼӀǵᡉቹΟঁ؁ᡯǶҞޑࣁ :

΋. ۓကϡҹय़ᑈЪᐱҥӚঁϡҹǴϡҹЁκࣁ1000 ȝm×1000 ȝmǶ Β. ۓကᇑڅጄൎǶ

Ο. ӧn⁺ GaAs ߄य़΢ۓကߎឦႝཱུკኬǶ

Ƕᇙำࢬำӵკ2.1܌ҢǴϡҹֹԋკ߾ӵკ2.2 ܌ҢǶ ჴᡍύ༾ቹᇙำ၁ॊӵΠ:

1. Ӏߔ༡թ

ךॺჴᡍ܌٬ҔޑӀߔࠠဦࣁ DPR-i7000 ޑ҅ӀߔǴճҔӀߔ༡ թᐒ(spinner)Ǵځ༡թచҹࣁٿࢤԄ௽ᙯǴӃҔեᙯೲ 300 rpmǴਔ ໔ࣁ 10 ࣾដǴஒӀߔණ໒ᙟᇂܭ඲Т΢ǴӆҔଯᙯೲ 3000 rpmǴਔ ໔ࣁ 30 ࣾដǴ٬Ӏߔޑࠆࡋ֡Ϭϩթܭ඲Т΢Ǵځጢࠆऊࣁ 7000 Å

ډ 8000 ÅǶ

2. Ӏߔ೬੘(soft-bake)

ӀߔЬाޑԋҽԖᆫӝނǵགӀᏊǵྋᏊϷబуᏊǴځྋᏊऊ՞

75 %ǴځҔཀӧܭีញӀߔǴ٬Ӏߔ༡թਔளа௽ᙯޑБԄ׎ԋᖓ ጢǶ٬Ҕ዗ѳय़(Hot-plate)ٰ೬੘ӀߔǴځჴᡍచҹྕࡋࣁ 130 ºCǴ ਔ໔ࣁ 1 ϩដǴޑҞޑӧܭஒӀߔύޑྋᏊ੘ଳǴ٬Ӏߔᖓጢଳᔿߕ

๱ܭኬࠔ΢ǴᗉխӢӀߔᖓጢ҂ଳԶᗹӧӀ࿽΢ǴԶคݤ຾ՉӀ࿽ჹ

ྗ(Mask Alignment)ޑᇙำǶ

3. Ӏ࿽ჹྗ(Mask Alignment)ᆶᚼӀ(Exposure)

ځҞޑӧܭஒӀ࿽΢܌೛ीޑႝཱུკਢǴᙯ౽Կኬࠔ΢ޑӀߔ ᖓጢǴᚼӀచҹޑ፾྽௓ڋޔௗቹៜډკਢЁκޑᆒዴ܄Ƕךॺ٬Ҕ Karl Suss ғౢࠠဦࣁ MJB3 ޑӀ࿽ჹྗᐒǴᚼӀӀྍࣁ؄ᐩǴځݢߏ ࣁ 365-nm ޑ๋ѦጕǴҗܭךॺ௦Ҕௗ᝻ԄᚼӀǴӢԜ඲ТѸ໪ᆙஏ

ௗ᝻Ǵаफ़եӀᏢᙅ৔ޑቹៜǴගଯკਢЁκޑᆒዴ܄ǶDPR-i7000 ӀߔځᚼӀਔ໔ࣁ 12 ࣾដǶ

4. ᡉቹ(Development)

җܭӀߔ࿶ၸᚼӀࡕǴԖྣډӀޑӀߔ཮ౢғϯᏢϸᔈǴԶؒԖ

ྣډӀޑӀߔ߾ό཮ǴךॺճҔᡉቹᏊஒ඲Т΢ǴԖᚼӀޑӀߔѐ

13

ቹన(ځЬाϩҽࣁ NaOH)ǴஒځᆶѐᚆηНа 1:7 ޑКٯషӝࡕբ ࣁᡉቹᏊǴᡉቹਔ໔ࣁ 20~28 ࣾǴ྽ኬࠔᡉቹֹԋࡕǴᒿջஒ඲Тܫ ΕѐᚆηНύؑࢱ 2 ϩដǴനࡕஒ඲Тܫӧคლર΢Ҕේ਻ᄳ֌ଳǶ ᡉቹਔ໔ޑඓඝѸ໪ᆒዴǴਔ໔ϼอ཮೷ԋᡉቹόֹӄǴਔ໔ϼߏ߾

཮೷ԋၸࡋᡉቹǴკਢЁκόᆒዴ฻ୢᚒǶ 5. Ӏߔฯ੘(Hot-bake)

Ԝ؁ᡯЬाޑҞޑࢂѐନӀߔύ܌ූᎩޑྋᏊǴቚуӀߔᆶኬࠔ ໔ߕ๱ΚϷӀߔޑமࡋǴаճࡕុޑᇑڅᇙำǴځჴᡍచҹྕࡋࣁ 130 ºCǴਔ໔ࣁ 10 ϩដǴЪ඲ТѸ໪а੿ޜᔅ੅֎ߕܭ዗ѳय़΢Ƕ 6. Ӏߔࠆࡋໆෳ

Ԝ؁ᡯЬाޑҞޑࢂ٬Ҕ Į-step 500 ѐໆෳϡҹᐱҥѳѠკਢޑ ӀߔࠆࡋǴаճࡕុᇑڅుࡋޑᆒዴ௓ڋǶ

7. ϡҹᐱҥ(Isolation)

Ԝ؁ᡯۓကрӚঁϡҹޑጄൎǴ٬Ӛձϡҹૈ୼ൂᐱᏹբԶόϕ

࣬ቹៜǶϡҹᐱҥаᔸԄᇑڅ຾ՉǴᇑڅ຾୷݈2000 ÅǶӧమࢱ؁ᡯǵ ༡թӀߔک٬ҔᚼӀᡉቹس಍ۓကϡҹᐱҥ୔༧ϐࡕǴӀߔςߥៈϡ ҹϸᔈ୔ୱխܭᇑڅǶኬࠔޑಔԋࢂGaAs/GaAsSbN/GaAsǴᇑڅన ޑଛБࣁH2O2: H3PO4: H2OǴځКٯࣁ1:1:5Ǵ٠ஒଛӳޑᇑڅྋనܫ

࿼ܭ10 ºCޑࡡྕኲύǴ٬ځᇑڅೲ౗ᛙۓӧ60 Å/secǶځύH2O2ёа

ӧ׷਑ޑ߄य़׎ԋ਼ϯނǴௗ๱ H3PO₄ ёаஒ਼ϯނѐନǴԶၲԋ ϯᏢᔸԄᇑڅޑҞޑǴЪԜྋనёаᇑڅGaAsϷGaAsSbN฻׷਑Ƕ 8. ᇑڅుࡋໆෳᆶӀߔѐନ

Ԝ؁ᡯЬाޑҞޑࢂ٬ҔĮ-step 500ѐໆෳϡҹᐱҥѳѠკਢޑ ᇑڅుࡋࢂցى୼Ǵᇑڅుࡋዴᇡֹԋջё຾ՉѐନӀߔ؁ᡯǴ٬Ҕ Ч✉(Acetone)ǵҘᎇ(Methanol)کѐᚆηН(D.I. Water)మࢱኬࠔǴा

ݙཀኬࠔ΢όёߥ੮Нᅄޑ౩ၞǴѐନ֎ߕӧኬࠔ߄य़΢ޑᔸ਻Ƕ

(Ѥ)໌ϯೀ౛

ჹܭᆶΕ৔Ӏጕ࣬ᜢޑϡҹԶقǴϸ৔౗תᄽΑ࣬྽ख़ाޑف ՅǴӢԜ໌ϯೀ౛ޑᔈҔ࣬྽ቶݱǴ੝ձࢂϡҹ߄य़ޑ໌ϯೀ౛Ǵჹ ϼ໚ૈႝԣԶق׳ࢂόё܈લޑǶ೭ࢂӢࣁӀጕӧόӕϟ፦໔໺ሀ ਔǴ೿཮Ԗऀ೸ᆶϸ৔ޑ౜ຝǶ࿶ၸ໌ϯೀ౛ࡕǴёа෧Ͽϸ৔౗ᆶ ቚуऀ೸౗ǴӢԜϼ໚ૈႝԣёаճҔ໌ϯೀ౛ٰቚу߄य़Ε৔Ӏޑ

ऀ೸౗Ǵගଯϼ໚ૈႝԣޑਏ౗Ƕ܌ᒏޑ໌ϯೀ౛ࢂࡰӧϡҹޑ߄य़ ᗓ΢΋ቫ܈ࢂӭቫޑӀᏢᖓጢǴ׎ԋ੝ਸޑࣚय़Ǵ٬ள࿶җӚቫࣚय़

܌ϸ৔ӣٰޑӀݢᆶӀݢϐ໔ౢғઇᚯ܄ޑυੋǴനಖ٬ϸ৔ӀόӸ ӧǶҁፕЎ௦Ҕޑ໌ϯೀ౛ࣁ٬ҔႝዀᇶշϯᏢ਻࣬؇ᑈݤ(Plasma

15

(SiN) Ǵේϯޖԋߏྕࡋ೛ۓӧ 280 ºCǵ೯ΕSiH4: 710 sccmǵNH3:66 sccmǵӧ 950 mTorr ΠԋߏǴԜచҹ܌ԋߏޑේϯޖ(SiN)ש৔౗ࣁ 2 (ค໌ϯೀ౛่ᄬ߾Ԝ؁ᡯ࣪ౣ)Ƕ

(ϖ) ໌ϯೀ౛่ᄬᇑڅ

Ԝ؁ᡯЬाࢂӢࣁේϯޖޑᏤႝ܄ৡǴߎឦႝཱུคݤޔௗᇃᗓӧ

ේϯޖ΢ǴӢԜߎឦႝཱུ୔ୱޑේϯޖѸ໪ѐନǶӧమࢱ؁ᡯǵ༡թ Ӏߔک٬ҔᚼӀᡉቹس಍ۓက Nௗᗺߎឦႝཱུ୔༧ϐࡕǴӀߔςߥ

ៈϡҹϸᔈ୔ୱխܭᇑڅǶᇑڅྋనࣁΒ਼ϯޖᇑڅన(BOE)ǴΒ਼

ϯޖᇑڅనࣁ֖Ԗణࢧለ (HF) ޑྋనᆶ SiO2 ׎ԋH2SiF6 ٠Ъё аᇑڅኬࠔ߄य़ޑ਼ϯނǴԖమዅ߄य़ޑբҔჹࡕុޑႝཱུᇙբਔߎ ឦԖ׳ӳޑߕ๱܄Ƕ

(Ϥ) Nௗᗺߎឦႝཱུ

ӧኬࠔ΢ᇃᗓߎឦࢂࣁΑᇙբႝཱུǴҁፕЎ૸ፕϐኬࠔࣁp-i-n ϐΒཱུᡏ่ᄬǴሡӧPᆄϷNᆄϩձᗓ΢ߎឦǶҁፕЎ௦ҔޑБݤࣁ у዗ᙺํᇃᗓس಍Ǵᙺํ೏у዗ຬၸߎឦϐᅙᗺࡕ٬ߎឦԋࣁ਻࣬ᇃ ᗓܭኬࠔϐ΢Ƕᇃᗓߎឦ໩ׇࣁAu/Ge ӝߎ 350 Å (GeКٯࣁ12

%)ǴԶࡕᗓ΢Au ࠆࡋ2300 ÅǶGe ӧԜ൩ࢂк྽donor ٬Ҕа׎ԋ ኻۅௗ᝻ǶAu ߾ࢂᏤႝǴቚуࠆࡋаߥៈ߄य़Ƕ

(Ύ) ௪ᚆ(Lift-off)

ӧኬࠔᇃᗓֹߎឦࡕǴךॺஒ඲ТݰډЧ✉ύǴճҔЧ✉ஒ඲Т

΢ҔٰߥៈϡҹޑӀߔྋှǴӢԜᙟᇂӧځ΢ޑߎឦΨ཮΋ٳ೏௪ ᚆǴࣁΑቚу௪ᚆޑਏ౗Ǵёаܫډຬॣݢమࢱᐒύ᎜ᕏǴӆஒኬࠔ

੆ݰҘᎇύǴܫ࿼ӧຬॣݢమࢱᐒύ᎜ᕏǴҔаஒ඲Т߄य़ූ੮ޑЧ

✉ϷߎឦߺѐନǴӆҔѐᚆηНؑࢱǴനࡕஒኬࠔܫӧคლરҔේ਻

ᄳ֌ଳǶ

(Ζ) P ௗᗺߎឦႝཱུ(P-contact)

٬Ҕу዗ᙺํᇃᗓس಍Ǵᙺํ೏у዗ຬၸߎឦϐᅙᗺࡕ٬ߎឦԋ ࣁ਻࣬ᇃᗓܭኬࠔϐ΢Ƕᇃᗓߎឦ໩ׇࣁAu/Beӝߎ1200 Å (BeКٯ ࣁ1 %)ǴԶࡕᗓ΢Au ࠆࡋ1300 ÅǶBe ଺ࣁ㯉ᚇа׎ԋኻۅௗ᝻Ƕ Au ߾ࢂᏤႝǴቚуࠆࡋаߥៈ߄य़Ƕ

(ΐ) ߎឦႝཱུזೲ዗ଏО(rapid thermal annealing, RTA)

זೲ዗ଏОӧԜࢂճҔ዗ૈٰᔅշόӕচη۶Ԝ่ӝԋϯᏢᗖ Զ׎ԋߎឦӝߎޑ΋ᅿу዗ᇙำǶ׆ఈᙖҗRTA ٬ኬࠔޑI-V ੝܄

җSchottky contact ᙯࣁohmic contactǴ٬ߎឦکGaAs ߄य़ૈ׎ԋ׳

17

਻20ࣾǴฅࡕа؂ࣾ10 ºCޑϲྕೲ౗ǴϲྕԿ380 ºCࡕଶ੮180ࣾǴ ӆஒේ਻ޑࢬໆуεԾฅफ़ྕԿ70 ºCаΠǶ

2.3 س಍೛࿼ᆶໆෳ

2.3.1 GaAsSbN ่ᄬ X-ray diffraction (HRXRD)ໆෳ

ҁፕЎ٬Ҕ PANalytical ࠠဦ X’Pert PRO XRD ໆෳس಍ǴԜس಍

ࣁ high resolution four crystal XRD (HRXRD)Ǵკ 2.3 ࣁԜ XRD ໆෳ

س಍ϐҢཀკǴҁፕЎ٬Ҕ Ȧ-2ș scan ໆෳኳԄǴໆෳ GaAsSbN ่ᄬ ޑ(4 0 0)य़ޑ rocking curve XRD spectrumǴ٠٬Ҕ X’Pert Epitaxy ೬ ᡏ଺ XRD spectrum ޑ simulationǴаΑှ GaAsSbN ่ᄬᆶ୷݈ࢂց lattice matchǶ

2.3.2 GaAsSbN ϡҹႝ৒-ႝᓸໆෳ

ҁፕЎ٬Ҕ HP-4194A ႝ৒-ႝᓸໆෳس಍Ǵёаᕇள GaAsSbN ϡҹ࣬ᜢޑ੝܄ୖኧǴӵޜЮ୔ቨࡋ(Wd)ჹѦуޔࢬୃᓸ(DC bias)ޑ profileǵၩηᐚࡋ(Nd)ჹѦуޔࢬୃᓸ(DC bias)ޑ profileǵ฻Ǵӧໆෳ

చҹ೛࿼΢ǴךॺᒧҔ Cs-RsޑໆෳኳԄ(mode)ǴѦуλߞဦޑᓎ౗

(frequency)೛ࣁ 1MHzǴOSC level ೛ࣁ 0.03Ǵaverage time ೛ࣁ 32Ǵ Ѧуޔࢬୃᓸޑଆۈ(start)ႝᓸ೛ࣁ-0.4VǴᄒЗ(stop)ႝᓸ೛ࣁ+2VǴ Զ໘ఊ(step)ႝᓸࣁ+0.1VǴ྽Ѧу΋ޔࢬୃᓸǴ߾ӧௗय़׎ԋ΋ޜЮ

୔ቨࡋࣁ:

2 S bi d

d

V V

W qN

H

ª º

« »

¬ ¼

ԜਔѦу΋λҬࢬߞဦႝᓸ dV ٬ளޜЮ୔ቨࡋቚу dWdǴౢғϐӭ рޜ໔ႝ಻(dQ)ࣁ:

d d

dQ qN dW

Զႝ൑ϐׯᡂໆ(dE)ࣁ:

d d

S S

dQ qN dW

dE

H H

җႝ൑ჹՏ࿼ϐᑈϩள

2

2

d d d d d d

d

S S S

W dQ qN W dW qN dW

dV W dE

H H H

ԶൂՏय़ᑈޜЮ୔ႝ৒(C)ࣁ:

S d

C dQ

dV W

H

H

ӢԜҗޜЮ୔ႝ৒ޑໆෳǴёаளޕޜЮ୔ቨࡋࣁ:

S

Wd

C

H

H

ஒ(2)ԄжΕ(1)ύёள

2 2

1/

qNd

H

19

2 1

1/ / Nd qH d C dV

ª º

« »

« »

¬ ¼

2.3.3 GaAsSbN ϡҹႝࢬ-ႝᓸ੝܄ໆෳ

ҁ ፕ Ў ٬ Ҕ HP(Agilent)-4155B ъ Ꮴ ᡏ ୖ ኧ ϩ ݋ ሺ ( semiconductor paramrter anaiyzer)ǴໆෳGaAsSbNϡҹޑསႝࢬޑႝ

ࢬ-ႝᓸϐ੝܄Ԕጕ(I-V curve)ǵᅅႝࢬ(Leakage current)ᆶׯᡂྕࡋ25 ɴ105 кޑႝࢬ-ႝᓸϐ੝܄ԔጕǶ

2.2.4 GaAsSbN ϡҹᙯඤਏ౗ໆෳ

ҁፕЎ٬ҔWACOMޑϼ໚Ӏྍኳᔕᐒ(Super Solar Simulator)ໆ

ෳس಍(კ2.4)ǴӀ᛼ࣁAM1.5GྣӀமࡋࣁ100 mV/cm²Ǵӧ࠻ྕΠໆ

ෳǴёኳᔕ300 nmԿ1800 nmޑӀྍǴёаᕇளϼ໚ૈႝԣ่ᄬӧone sunᆶmulti sunமࡋΠޑ໒ၡႝᓸǵอၡႝࢬǵ༤кӢηᆶӀႝᙯඤਏ

౗฻੝܄ୖኧǶ

(1) อၡႝࢬ(short circuit current, Isc) Ǻ

อၡႝࢬࢂϼ໚ႝԣॄၩࣁ႟ޑރᄊΠǴջѦ೽ႝၡอၡਔǴ܌

ໆளޑႝࢬᆀࣁอၡႝࢬ(Isc)ǴԜਔV =0Ǵёள I I^ph I^sc

ջอၡႝࢬIsc ฻ܭϼ໚ႝԣྣӀࡕౢғޑӀႝࢬǶӧЬ୏ୃᓸޑໆ

ෳ΢Ǵ I-V ᜢ߯ԔጕύY ື(V=0)ޑҬᗺǴځႝࢬॶջอၡႝࢬIscǶ

(2) ໒ၡႝᓸ(open circuit voltage, Voc)Ǻ

໒ၡႝᓸ(Voc)྽ϼ໚ႝԣॄၩࣁคज़εਔǴໆளޑႝᓸǴԵቾRs

= 0 ЪRsh =’ޑ௃ݩΠǴԜਔᒡрႝࢬI=0ёа௢Ꮴр໒ၡႝᓸVoc ࣁ

0

ln ^sc 1

oc nkT I

V q I

§ ·

¨  ¸

© ¹

ӧЬ୏ୃᓸޑໆෳ΢Ǵ I-V ᜢ߯ԔጕύX ື(I=0)ޑҬᗺǴځႝᓸॶ ջ໒ၡႝᓸVocǶ

(3) ༤кӢη(Fill Factor, FF)Ǻ

༤кӢη(FF)ۓကࣁϼ໚ႝԣӧനεф౗ᒡрਔǴᒡрф౗ॶ P^maxᆶVoc کIsc ޑКॶǶϼ໚ႝԣനεф౗ࣁ

max max max

P I V

ۓက΋ୖኧFF

max max max

sc oc sc oc

P I V

FF I V I V

FF ຫε߾ૈໆᙯඤਏ౗ຫӳ

(4) ૈໆᙯඤਏ౗(Power Conversion Efficiency, PCE)Ǻ

ᙯඤਏ౗(Ș)ёղձ΋ঁϼ໚ႝԣ܄ૈޑӳᚯǴૈໆᙯඤਏ౗(PCE)ۓ ကࣁϼ໚ႝԣޑനεᒡрф౗ᆶΕ৔Ӏф౗PⁱⁿϐКॶ

max sc oc

in in

P FF I V

P P

K ^u

21

1.Ӏߔ༡թ! 2. ϡҹᐱҥѳѠკਢޑӀᏢ༾

3/ ϡҹᐱҥѳѠᇑڅ 4/ѐӀߔ!

6/ לϸ৔ቫԋߏ! 7/ Ӏߔ༡թ!

8/ N ௗᗺߎឦႝཱུޑӀᏢ༾ቹ! 9/ לϸ৔ቫᇑڅ!

:/ לϸ৔ቫᇑڅ! 21/ N ௗᗺߎឦႝཱུᇃᗓ!

22/ ௪ᚆ(Lift-off)! 23/ P ௗᗺߎឦႝཱུᇃᗓ!

24/ ϡҹ९ຎკ

კ 2.1 p-i-n ϡҹᇙำࢬำკǶ

1000

1000 150

150

450

450 550

550

unit in Pm 140 1000

1000 150

150

450

450 550

550

unit in Pm 140

კ 2.1 p-i-n ϡҹ΢ຎკǴځύߎឦ፿Ӏय़ᑈ 12.8%Ƕ

23

კ 2.3 X’Pert PRO XRD ໆෳس಍ϐҢཀკǶ

კ 2.4 ϼ໚Ӏྍኳᔕᐒໆෳس಍Ƕ

25

ಃΟക ჴᡍ่݀ᆶ૸ፕ

ךॺஒคᄞᚇϐේઈᎌϯㄿ׷਑ᔈҔܭ p-i-n ϼ໚ႝԣϡҹ่ᄬ ϐ i ቫ֎ԏቫύǴේԋϩࣁ 1 %Ǵᎌԋϩࣁ 2 %Ƕҗ߻ॊϐᙁϟ೽ҽ ёаளޕե֖ේϐΟϖϯӝނᔈҔӧϼ໚ႝԣ่ᄬࣣ཮ளډ໩ӛୃ

ᓸႝࢬၸεϐલᗺǴᏤठϼ໚ႝԣޑ໒ၡႝᓸၸեǴԶคݤගϲᙯඤ ਏ౗ǴࡺӧԜക࿯Ьा௖૸዗ଏОک໌ϯᇙำ n-GaAs/p-GaAsSbN ௗ य़ޑྣӀᆶསႝࢬႝᓸ੝܄ϐቹៜǶ

3.1 ᔈҔܭ p-i-n ϡҹϣϐේઈᎌϯㄿ୷ҁ੝܄Ǻ

ךॺ٬Ҕคᄞᚇϐ GaAsSbN ׷਑ᆶ p-i-n ϼ໚ႝԣϐ i ቫύǴ٠ Ъׯᡂ၀ቫࠆࡋ(250ǵ500ǵ100 ک 2000 nm) Ǵϡҹ่ᄬӵ߄ 3.1 ܌ ҢǶҗ high resolution x-ray diffraction (HRXRD)ໆෳךॺዴᇡ඲਱ό ϰଛλܭ 0.21 %Ǵӵკ 3.1 ܌ҢǶךॺҭёаᢀჸډ GaAsSbN ድ඲

ቫࠆࡋຫࠆޑϡҹǴᙅ৔ૻဦъቨ཮ቚуǴᡉҢኬࠔԋҽޑό֡Ϭࡋ ᒿ๱ድ඲ၸำ΢ϲǶკύϐ fringing ૻဦٰԾ߄ቫ 100-nm ࠆޑ n ࠠ GaAsǴё٬Ҕ୏ᄊኳᔕр၀ fringing ᛼ጕǴӵკ 3.1 ϣ໵Յ຀ጕ܌ҢǶ GaAsSbN ׷਑ޑૈሜҗ֎ԏ᛼ޑᄒЗ֎ԏӀηૈໆёޕࣁ 1.17 eVǶ җ C-V ໆෳҁക܌٬Ҕޑ p-i-n ϡҹளޕޜЮ୔ቨࡋऊ 230~250 nmǴ ᐚࡋऊࣁ 1×10¹⁷cm³Ƕ

3.2 ႝࢬႝᓸ੝܄Ǻ

ךॺჹѤᅿ GaAsSbN ድ඲ቫࠆࡋޑϡҹଞჹ዗ଏО߻ࡕکբ؈

ᑈΑޖේϯނᆶΒ਼ϯޖϐϡҹޑႝࢬႝᓸᜢ߯բࣴزǶ

3.2.1 ҂ڙ዗ଏОϡҹϐႝࢬႝᓸ੝܄Ǻ

ךॺໆෳѤᅿόӕ GaAsSbN ድ඲ቫࠆࡋޑསႝࢬႝᓸԔጕǴவ კ 3.2(a)ύё࣮рӧ଍ӛୃᓸ 2 ҷ੝ਔᅅႝࢬԖᒿ๱ࠆࡋޑ෧ϿԶΠ फ़(7.2×10^-6 A/cm²Πफ़ 5.5×10^-7 A/cm²)ǹკ 3.2(b)ύё࣮р྽໩ӛୃᓸ ܭ࣬ӕႝࢬஏࡋ(0.05 A/cm²)ਔႝᓸᒿ๱ GaAsSbN ֎ԏቫࠆࡋ෧ϿԶ

΢ϲ(0.38 V ΢ϲԿ 0.46 V)Ƕ^GaAsSbN ድ඲ቫࠆࡋࣁ 2000 nm (C2536)ǵ1000 nm(C2537)ǵ500 nm(C2538)ǵ250 nm(C2539) ޑኬࠔ ύǴ౛གྷӢηϩձࣁ 1.30ǵ1.22ǵ1.26ǵ1.20ǴᡉҢᒿ๱ࠆࡋޑ෧Ͽ

཮Πफ़ջຫᖿܭᘉණႝࢬ(diffusion current)Ǵ྽౛གྷӢηຫௗ߈ܭ 2 ਔ ߄ Ң ႝ ࢬ Ь ा ࣁ ൺ ӝ ႝ ࢬ Ƕ ќ Ѧ ӧ კ 3.2(b) ϣ у Ε InGaP(E)/GaAs(B)/GaAs(C)౦፦ௗय़ᚈၩηႝ඲ᡏޑ৔୷ཱུ໩ӛႝࢬ ஏࡋᆶႝᓸԔጕ(ӵკ 3.2(b)ϣϐ GaAs_Ic ܌Ң)ǴКၨӧႝࢬஏࡋࣁ 0.05 A/cm²ਔႝᓸৡຯऊࣁ 0.54 VǶGaAs ޑ৔୷ཱུ໩ӛႝࢬᐒЯࣁ p/n ௗय़ޑᘉණႝࢬǴࡺаԜКჹ n-GaAs/i-GaAsSbN ௗय़ϐႝࢬᐒ ڋǶҗܭ GaAsSbN ᆶ GaAs ׷਑ޑૈሜৡ 0.25 eVǴךॺ჋၂а

27

ࡋࣁૈሜ 1.17 eV ਔޑᐚࡋελǴ٠ளૈሜࣁ 1.17 eV ϐ p/n ௗय़ޑᘉ ණႝࢬஏࡋႝᓸԔጕǴӵკ 3.2(b)ϣޑ simulation ԔጕǶӧႝࢬஏࡋ ࣁ 0.05 A/cm²ਔޑႝᓸऊࣁ 0.8 ҷ੝Ƕՠࢂჴሞϡҹӧႝࢬஏࡋࣁ 0.05 A/cm²ਔޑႝᓸऊ 0.38~0.46 ҷ੝ǴᡉҢԖځдޑႝࢬᐒڋܴᡉຬၸ ᘉණႝࢬ٬ள໩ӛୃᓸϐႝࢬၸεǶ

Кၨϡҹӧ 0.25 V ೀޑႝࢬஏࡋᡂϯǴךॺว౜ᆶ GaAsSbN ድ

඲ቫࠆࡋԖᜢǴ྽ࠆࡋࣁ 2000ǵ1000ǵ500 ک 250 nm ਔǴ࣬ჹᔈӧ 0.25VೀޑႝࢬஏࡋКࣁ 11:5:2:1Ǵࡐௗ߈ GaAsSbN ድ඲ቫࠆࡋКǴ ջ ё ૈ ࣁ ϡ ҹ ୁ य़ ϐ ޑ ߄ य़ ౢ ғ ൺ ӝ ႝ ࢬ (surface recombination current)Ǵ೷ԋ໩ӛୃᓸႝࢬଯၸᘉණႝࢬϐ௃ݩǶЪ྽ GaAsSbN ࠆ ࡋࣁ 2000 nm ਔǴӧ 0.25V ೀϐႝࢬஏࡋᡂϯࢂࠆࡋࣁ 250 nm ϐϡ ҹޑ 11 ७ǴᡉҢନΑୁय़ޑ߄य़ൺӝႝࢬϐѦۘԖځдߚ౛གྷϐႝ

ࢬᐒڋӸӧǶ

3.2.2 ڙ዗ଏОೀ౛ࡕϐϡҹႝࢬႝᓸ੝܄Ǻ

კ 3.3 ࣁόӕ GaAsSbN ࠆࡋ٬Ҕ MBE բ዗ଏОᇙำޑསႝࢬႝ

ᓸԔጕǴځύ MBE ዗ଏОచҹӧၸઈᓸߥៈΠӧ 600^oCӚձ࡭ុ 5ǵ 30ǵ60ǵ120 ک 300 ϩដǶӧ໩ӛୃᓸύǴႝࢬஏࡋࣁ 0.05 A/cm²ਔǴ GaAsSbN ࠆࡋࣁ 2000 nm(C2536)ኬࠔޑႝᓸ཮ᒿ๱዗ଏОਔ໔ޑቚ уԶ΢ϲ(0.38 V ΢ϲԿ 0.42 V)Ǵ1000 nm(C2537)ኬࠔ཮ᒿ๱዗ଏО

ਔ໔ޑቚуԶΠफ़(0.41 V Πफ़Կ 0.38 V)Ǵ500 nm(C2538)ኬࠔ཮ᒿ๱

዗ଏОਔ໔ޑቚуԶΠफ़(0.44 V Πफ़Կ 0.40 V)Ǵ250 nm(C2539)ኬࠔ

཮ᒿ๱዗ଏОਔ໔ޑቚуԶΠफ़(0.46 V Πफ़Կ 0.40 V)Ƕӧ౛གྷӢη

೽ϩόӕࠆࡋኬࠔᒿ๱዗ଏОᇙำਔ໔ޑቚуคၨܴᡉޑᡂϯᖿ

༈Ƕёаݙཀޑࢂᒿ๱዗ଏОਔ໔ޑቚуǴӧ 0 V ߕ߈ϐ໩ӛୃᓸೀ

ޑൺӝႝࢬ(recombination current in forward bias)ܴᡉ΢ϲǴᡉҢ๱

P/NޜЮ୔ϣޑ recombination center ᐚࡋቚуǶӧϐ߻ޑࣴزᡉҢǴ GaAsSbN ׷਑࿶ၸ዗ଏОೀ౛ϐࡕϣ೽ၩηᐚࡋ཮΢ϲЪࣁㄿޜՏ લഐ (gallium vacancy, VGa) ೷ԋϐᜪ՟ڙᡏ(acceptor-like)܌ගٮǶࡺ

዗ଏОਔ໔ቚуǴ໩ୃൺӝႝࢬ΢ϲёૈࢂㄿޜՏલഐ೏ࢲϯ܌ठǶ

! ! όӕ GaAsSbN ࠆࡋϐϡҹڙ዗ଏОೀ౛ࡕǴӧ 0.25 V ೀޑႝࢬ ஏ ࡋ ᡂ ϯ ӧ ࠆ ࡋ Ӛ ࣁ 2000(C2536) ǵ 1000(C2537) ǵ 500(C2538) ک 250-nm(C2539)ਔǴ዗ଏО 5 ϩដਔႝࢬஏࡋКࣁ 0.53:0.55:0.62:1Ǵ

዗ଏО 30 ϩដਔႝࢬஏࡋКࣁ 2.41:0.87:1.67:1Ǵ዗ଏО 60 ϩដਔႝ

ࢬ ஏ ࡋ К ࣁ 0.77:0.94:0.95:1 Ǵ ዗ ଏ О 120 ϩ ដ ਔ ႝ ࢬ ஏ ࡋ К ࣁ 0.45:0.85:0.23:1Ǵ዗ଏО 300 ϩដਔႝࢬஏࡋКࣁ 2.18:6.13:2.93:1Ǵ ᡉҢ GaAs/GaAsSbN ௗय़ޑ໩ӛႝࢬᐒڋڙ዗ଏОᇙำࡕς࿶ౢғ ᡂϯǴόႽ߻΋࿯૸ፕύޑႝࢬஏࡋКᆶ GaAsSbN ࠆࡋԋ҅КǴԜ

29

ࢬᕇளׯ๓ǶฅԶ዗ଏОᇙำਔ໔ϼߏ(300 ϩដ)ᇨวΑځдߚᘉණ

ႝࢬᐒڋᏤठ໩ӛႝࢬ΢ϲǶࡕុךॺஒаόӕޑϡҹय़ᑈᆶόӕໆ

ෳྕࡋ௖૸Ԝߚ౛གྷϐႝࢬᐒڋǶ

ஒόӕ GaAsSbN ࠆࡋ٬Ҕ MBE բ዗ଏОᇙำ࡭ុ 60 ϩដޑኬ ࠔǴϩձᇙ଺ϡҹय़ᑈࣁ 1×10^-2 cm²ᆶ 4×10^-4 cm²ޑསႝࢬႝᓸԔጕ (Ԝٿᅿϡҹय़ᑈКࣁ 25:1, ຼߏКࣁ 5:1)Ƕკ 3.4 ଍ӛୃᓸϐསႝࢬ

ႝᓸԔጕӧ଍ӛୃᓸ 2 ҷ੝ೀλय़ᑈϡҹޑᅅႝࢬКεय़ᑈϡҹޑ ᅅႝࢬե 2 ঁኧໆભа΢ǶԶ໩ӛୃᓸύӵკ 3.5Ǵόӕ GaAsSbN ࠆ ࡋޑϡҹǴӧႝᓸ 0.35 V ೀǴεय़ᑈᆶλय़ᑈϡҹޑႝࢬКॶϩձ 3.7Ȑ2000 nm, C2536ȑǵ5.5(1000 nm, C2537)ǵ3.9(500 nm, C2538)ǵ 5.9(250 nm, C2539)ǴႝࢬКᆶڬߏК࣬߈Ǵջ໩ӛୃᓸႝࢬελᆶڬ ߏԖᜢǴ܌а໩ӛୃᓸႝࢬႝࢬᐒڋ٩ฅࢂϡҹୁय़ϐ߄य़ൺӝႝࢬ ЬৌǶ

3.2.3 ᡂྕໆෳསႝࢬႝᓸ੝܄Ǻ

Ԝ࿯ךॺᢀჸΑႫکႝࢬஏࡋᆶྕࡋॹኧϐᜢ߯Ƕஒསႝࢬஏࡋ

ႝᓸᜢ߯ϐႝࢬஏࡋ೽ҽڗԾฅჹኧࡕӆѦකԿႝࢬஏࡋືǴᄒຯջ ࣁႫکႝࢬஏࡋ(saturation current density, Js)ǶஒѤᅿόӕ GaAsSbN ࠆࡋϡҹޑསႝࢬஏࡋᆶႝᓸᜢ߯٬Ҕ߻ॊϐБݤڗрႫکႝࢬஏ ࡋ(Js)ࡕᆶ዗ૈॹኧ(kT^-1)բკǶӵკ 3.6 ܌ҢǴаӵΠႫکႝࢬஏࡋ

ᆶࢲϯૈޑᜢ߯Ƕ

kT ୬E ) J

ln( _s ^d Ǵځύ JsࣁႫکႝࢬஏࡋǹ EdࣁࢲϯૈǴൂՏࣁႝηҷ

੝ǶǹkT ࣁ዗ૈǴൂՏࣁႝηҷ੝Ƕϩ݋კ 3.6 ᡉҢځႝࢬፄӝႝࢬ ᐒڋǴёว౜΋ௗ߈ 1/2 ૈሜॶޑࢲϯૈǶӚঁኬࠔϐࢲϯૈॶӈܭ ߄ 3.2Ƕܭ߄ 3.2 ύёᢀჸډࢲϯૈ཮ᒿ๱዗ଏОਔ໔ቚуԶቚуǴ ᡉҢଏОёа೴ᅌफ़եፄӝႝࢬ٠ቚуᘉණႝࢬޑԋҽǶ

3.2.4 ໌ϯೀ౛ჹསႝࢬႝᓸ੝܄ޑቹៜǺ

ϡҹᇙբࢂ٬Ҕ GaAsSbN ࠆࡋࣁ 250 nm(C2539)҂ڙၸ዗ଏО ޑኬࠔǴܭځ΢؈ᑈόӕޑϟႝ׷਑྽଺໌ϯೀ౛Ǵϩձࣁ 305-nm SiNک 305-nm SiN/ 400-nm SiO2Ƕკ 3.7(a)ࣁค؈ᑈϟႝ׷਑аϷ໌

ϯచҹ A ک B ࡕϐϡҹޑསႝࢬႝᓸԔጕǴவკύё࣮рӧ଍ӛୃ

ᓸ 2 ҷ੝ਔᅅႝࢬԖלϸ৔ቫޑϡҹёаफ़եᅅႝࢬ 1~2 ঁኧໆભǹ ӵკ 3.7(b)ࣁ໩ӛୃᓸύϐསႝᓸႝࢬஏࡋᆶႝᓸϐᜢ߯Ǵӧ࣬ӕႝ

ࢬஏࡋ(0.05 A/cm²)ਔႝᓸ཮Ӣ໌ϯೀ౛Զ΢ϲऊ 50~70 mVǶ 3.3 ྣӀϐႝࢬႝᓸ੝܄Ǻ

ஒ 3.2.3 ࿯ϣϐኬࠔ࿼ܭϼ໚ӀኳᔕᏔύ٬ҔόӕᆫӀமࡋໆෳ

ྣӀਔϐႝࢬஏࡋႝᓸ੝܄ǶᆫӀமࡋϩձࣁ 1 ঁǵ6 ঁک 42 ঁϼ

31

ᓸᜢ߯Ԕጕӵკ 3.8 ܌ҢǴךॺஒԜΟచႝࢬஏࡋᆶႝᓸᜢ߯ԔጕӚ ձڗอၡႝࢬஏࡋа΢ 68.8 mA/cm²ೀޑႝᓸᆶႝࢬஏࡋᏹբᗺǴа ԜΟᗺ٬Ҕᜢ߯Ԅ

] ǻJ)R - J ( + [V s sc

s sc

e D

J

= ǻJ - J

= J

ё ؃ ڗ ϼ ໚ ႝ ԣ ϐ ஌ ғ Ս ᖄ ႝ ߔ Rs Ǵ ০ ኱ ᜢ ߯ ϐ ႝ ᓸ ೽ ϩ ࣁ VD+(Jsc-'J)RsǴԶႝࢬஏࡋ೽ϩࣁ Jsc-'JǶځύ Jsc߄ҢอၡႝࢬஏࡋǴ 'J Ԝೀ٬Ҕอၡႝࢬஏࡋа΢ 68.8 mA/cm²ǴVDࣁϼ໚ႝԣ p/n ௗय़

ႝᓸǶ࿶ၸ΢ॊϐБݤךॺ؃ள C2539 ኬࠔ҂բ዗ଏОک໌ϯೀ౛

ޑኬࠔϐ஌ғՍᖄႝߔ Rs ελࣁ 10:Ƕ࣬ӕೀ౛БݤǴךॺΨϩ݋

Α C2539 ҂዗ଏОЪ߄य़؈ᑈ 305-nm SiN ک C2539 ҂዗ଏОЪ߄य़

؈ᑈ 305-nm SiN/ 405-nm SiO2ኬࠔޑ஌ғՍᖄႝߔǴԜΒኬࠔޑྣӀ

ႝࢬஏࡋᆶႝᓸᜢ߯ӵკ 3.9 کკ 3.10 ܌ҢǴբΑ໌ϯೀ౛ࡕޑՍᖄ

ႝಔ΢ϲӚձࣁ 14 ک 16:Ƕ໌ϯቫ่ᄬࣁ 305-nm SiN/ 400-nm SiO2

ਔӧΟᅿϼ໚ኳᔕӀྍமࡋࣣԖനεᙯඤਏ౗ǴҞ߻ӧ 42 ७ޑ AM1.5G ϼ໚ኳᔕӀྍྣ৔ਔϼ໚ႝԣᙯඤਏ౗ࣁ 6.6 %Ƕ࣬ᜢ่݀

ӈܭ߄ 3.3Ƕ

߄ 3.1 Ѥᅿ GaAsSbN ࠆࡋϐ p-i-n ϼ໚ႝԣ่ᄬ

C2536 C2537 C2538 C2539 N⁺GaAs

Contact layer 100 nm 100 nm 100 nm 100 nm Undoped

GaAs0.97Sb0.02N0.01

2000 nm 1000 nm 500 nm 250 nm P⁺ GaAs 100 nm 100 nm 100 nm 100 nm

P⁺ GaAs(100) substrate

߄ 3.2 όӕ GaAsSbN ࠆࡋᆶόӕ MBE ዗ଏОᇙำϐϡҹႫکႝࢬ ஏࡋޑࢲϯૈǴځύࢲϯૈൂՏࣁ eV

ʳ As grown 5 min 30 min 60 min 120 min 300 min C2536 0.45 0.46 0.49 0.54 0.55 0.60 ʳ C2537 0.55 0.60 0.61 0.62 0.63 0.64 ʳ C2538 0.62 0.64 0.65 0.66 0.72 0.73 ʳ C2539 0.44 0.58 0.60 0.61 0.64 ʳ ʳ

33

߄ 3.3 C2539 ҂ڙၸ዗ଏОک໌ϯೀ౛ϐኬࠔǴᆶ҂ڙၸ዗ଏОуΕ

໌ϯೀ౛ϐኬࠔޑϼ໚ႝԣ੝܄کՍᖄႝߔ Sample

ID sun Voc (V)

Jsc (mA/cm²)

Pm

(mW/cm²) FF Eff (%)

series resistance

(ohm) 1 0.38 -12.8 3.2 0.66 3.2

6 0.45 -77.9 24.7 0.70 4.1 as

grown

42 0.50 -546.3 194.0 0.71 4.6 10

1 0.43 -17.4 4.6 0.61 4.6 6 0.51 -99.4 34.6 0.68 5.8 305-nm

SiN

42 0.55 -671.9 254.4 0.69 6.1 14

1 0.46 -16.9 4.9 0.63 4.9 6 0.53 -106.5 38.3 0.68 6.4 305-nm

SiN/

400-nm SiO2

42 0.58 -713.1 278.7 0.67 6.6 16

-2000 -1500 -1000 -500 0 500 1000 1500 2000 10¹

10¹¹ 10²¹ 10³¹

Intensity (a.u.)

Z/2T (arc sec)

C2535 C2536 C2537 C2538 C2539

კ 3.1 GaAsSbN ༧׷׷਑(C2535)کѤᅿόӕ GaAsSbN ֎ԏቫࠆࡋ ϐ p-i-n ϡҹޑ HRXRD ่݀Ƕځύ຀ጕ೽ϩࣁ୏ᄊኳᔕ่݀Ǵ HRXRD ᛼ጕ΢ޑ fringing ࢂ߄ቫ 100-nm ޑઈϯㄿ܌ठǶ

35

0 .0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2

1 0^-7 1 0^-6 1 0^-5 1 0^-4 1 0^-3 1 0^-2 1 0^-1 1 0⁰

1 0¹ A s g r o w n C 2 5 3 6 C 2 5 3 7 C 2 5 3 8 C 2 5 3 9 Ic (G a A s ) s im u la tio n

n ~ 1 .0 Current DensityʻA/cm2 ʼ

V o lta g e (V ) (b )

-2 .0 -1 .8 -1 .6 -1 .4 -1 .2 -1 .0 -0 .8 -0 .6 -0 .4 -0 .2 0 .0 1 0^-7

1 0^-6 1 0^-5 1 0^-4 1 0^-3 1 0^-2 1 0^-1 1 0⁰ 1 0¹

C 2 5 3 6 C 2 5 3 7 C 2 5 3 8 C 2 5 3 9

Current DensityʻA/cm2 ʼ

V o lta g e (V ) (a ) A s g r o w n

კ 3.2 Ѥᅿ҂ڙၸ዗ଏОೀ౛ GaAsSbN ࠆࡋޑϡҹ(a)଍ӛୃᓸ སႝࢬႝᓸᜢ߯ᆶ(b)໩ӛୃᓸསႝࢬႝᓸᜢ߯Ƕ

0.0 0.2 0.4 0.6 0.8 1.0 1.2 10^-7

10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹

C2538

C2537

n~1.0 As grown

5 min 30 min 60 min 120 min 300 min Ic(GaAs) simulation Current Density ʻA/cm2ʼ

Voltage (V) (a) C2536

0.0 0.2 0.4 0.6 0.8 1.0 1.2

10^-7 10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹

n~1.0 n~1.0

n~1.0 As grown

5 min 30 min 60 min 120 min 300 min Ic(GaAs) simulation Current Density ʻA/cm2ʼ

Voltage (V) (b)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

10^-7 10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹

As grown 5 min 30 min 60 min 120 min 300 min Ic(GaAs) simulation Current Density ʻA/cm2ʼ

Voltage (V) (c)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

10^-7 10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹ C2539

As grown 5 min 30 min 60 min 120 min 300 min Ic(GaAs) simulation Current Density ʻA/cm2ʼ

Voltage (V) (d)

კ 3.3 GaAsSbN ࠆࡋࣁ (a)2000 nm(C2536) (b)1000 nm(C2537) (c)500 nm(C2538) (d)250 nm(C2539)ޑϡҹჹ዗ଏОਔ໔ϐ໩ӛ

ୃᓸསႝࢬႝᓸᜢ߯Ƕ

37

-2.0 -1.5 -1.0 -0.5 0.0

10^-10 10^-9 10^-8 10^-7 10^-6 10^-5 10^-4 10^-3 10^-2

1x10^-2 cm² 4x10^-4 cm²

C2539 C2538

C2537

Current (A)

Voltage (V) (a)

C2536

-2.0 -1.5 -1.0 -0.5 0.0

10^-10 10^-9 10^-8 10^-7 10^-6 10^-5 10^-4 10^-3 10^-2

1x10^-2 cm² 4x10^-4 cm²

Current (A)

Voltage (V) (b)

-2.0 -1.5 -1.0 -0.5 0.0

10^-10 10^-9 10^-8 10^-7 10^-6 10^-5 10^-4 10^-3 10^-2

1x10^-2 cm² 4x10^-4 cm²

Current (A)

Voltage (V) (c)

-2.0 -1.5 -1.0 -0.5 0.0

10^-10 10^-9 10^-8 10^-7 10^-6 10^-5 10^-4 10^-3 10^-2

1x10^-2 cm² 4x10^-4 cm²

Current (A)

Voltage (V) (d)

კ 3.4 Ѥᅿ GaAsSbN ࠆࡋ࿶ၸ 60 ϩដ዗ଏОೀ౛ӧόӕޑϡҹ य़ᑈ: 1×10^-2cm²Ǵ4×10^-4 cm²(a)2000 nm(C2536) (b)1000 nm (C2537) (c)500 nm(C2538) (d)250 nm(C2539) ଍ӛୃᓸསႝࢬႝ

ᓸᜢ߯Ƕ

0.0 0.2 0.4 0.6 0.8 1.0 1.2 10^-7

10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹

1x10^-2cm² 4x10^-4cm² Ic(GaAs) simulation

C2539 C2538

C2537

Current Density (A)

Voltage (V) (a) C2536

0.0 0.2 0.4 0.6 0.8 1.0 1.2

10^-7 10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹

1x10^-2cm² 4x10^-4cm² Ic(GaAs) simulation

Current Density (A)

Voltage (V) (b)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

10^-7 10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹

1x10^-2cm² 4x10^-4cm² Ic(GaAs) simulation

Current Density (A)

Voltage (V) (c)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

10^-7 10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹

1x10^-2cm² 4x10^-4cm² Ic(GaAs) simulation

Current Density (A)

Voltage (V) (d)

კ 3.5 Ѥᅿ GaAsSbN ࠆࡋ࿶ၸ 60 ϩដ዗ଏОೀ౛ӧόӕޑϡҹय़ ᑈ:1×10^-2 cm²Ǵ4×10^-4 cm²(a)2000 nm(C2536) (b)1000 nm(C2537) (c) 500 nm(C2538) (d)250 nm(C2539) ໩ӛୃᓸསႝࢬႝᓸᜢ߯Ƕ

39

30 31 32 33 34 35 36 37 38 39 40

10^-8 10^-7 10^-6 10^-5 10^-4 10^-3

Saturation Current Density, JsʻA/cm2 ʼ

1/KT (a)

As grown 5 min 30 min 60 min 120 min 300 min

30 31 32 33 34 35 36 37 38 39 40

10^-8 10^-7 10^-6 10^-5 10^-4 10^-3

Saturation Current Density, JsʻA/cm2ʼ

1/kT (b)

As grown 5 min 30 min 60 min 120 min 300 min

30 31 32 33 34 35 36 37 38 39 40

10^-8 10^-7 10^-6 10^-5 10^-4 10^-3

Saturation Current Density, JsʻA/cm2ʼ

1/kT (c)

As grown 5 min 30 min 60 min 120 min 300 min

30 31 32 33 34 35 36 37 38 39 40

10^-8 10^-7 10^-6 10^-5 10^-4 10^-3 C2539 C2538

C2537

As grown 5 min 30 min 60 min 120 min

Saturation Current Density, JsʻA/cm2ʼ

1/kT (d) C2536

კ 3.6 Ѥᅿ GaAsSbN ࠆࡋ࿶ၸόӕ዗ଏОਔ໔ೀ౛ޑϡҹ (a) 2000 nm(C2536) (b)1000 nm(C2537) (c)500 nm(C2538) (d)250 nm (C2539)ޑႫکႝࢬஏࡋ Jsჹ዗ૈॹኧ(1/kT)բკǶ

0.0 0.2 0.4 0.6 0.8 1.0 1.2 10^-7

10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹ 10²

as-grown 305-nm SiN

305-nm SiN/ 400-nm SiO₂ GaAs_Ic

simulation

Current DensityʻA/cm2 ʼ

Voltage (V) (b)

-2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 10^-7

10^-6 10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹ 10²

C2539 without annealing as-grown

305-nm SiN

305-nm SiN/ 400-nm SiO₂

Current DensityʻA/cm2 ʼ

Voltage (V) (a) C2539 without annealing

კ 3.7 C2539 ҂ڙ዗ଏОϐኬࠔӧค؈ᑈϟႝ׷਑аϷڙၸ໌

ϯೀ౛ϐϡҹ(a)଍ӛୃᓸک(b)໩ӛୃᓸޑསႝࢬႝᓸԔጕǶ