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國立成功大學「邁向頂尖大學計畫」
延攬優秀人才工作報告表
NCKU’s “Aim for the Top University Project”
Work Report Form for Distinguished Scholars
□續聘continuation of employment
離職resignation100 年 7 月 13 日更新 受聘者姓名
Name of the Employee
林萬里 男 �女
Male Female
聘 期 Period of Employment
from 2016 年 1 月 1 日 to 2016 年 12 月 31 日 研究或教學或科技研發與
管理計畫名稱 The project title of research,
teaching, technology development and management
邁向頂尖大學計畫 計畫主持人
（申請單位主管）
Project Investigator (Head of Department/Center)
電機資訊學院 許渭州院長
補助延聘編號
Grant Number HUA 105 – 21T - 4 - 060
一、 研究、教學、科技研發與管理工作全程經過概述。（由受聘人填寫）
Please summarize the entire research, teaching, or science and technology R&D and management work process (To be completed by the employee)
During previous appointment period, this appointee has worked in two areas of research under SDML (Semiconductor Device Modeling Lab): (i) Modeling of Negative-Capacitance FETs and (ii) MIM diode characterization and modeling. The following are the reports on the studies:
(1) Modeling of Negative-Capacitance FETs
A meeting was arranged with Prof. Sayeef Salahuddin of U. C. Berkeley, the principal investigator on Negative-Capacitance FETs at Berkeley to explore possible collaboration on such subject and to jointly apply for research funding from US.
Prof. Yogesh Singh Chauhan of Indian Institute of Technology (IIT), Kampur, who was a post-doctor research staff at U. C. Berkeley, was also contacted to explore opportunity of collaboration on NC-FET research.
So far, experimental data of NC FETs at SDML were predominantly obtained from Prof. Shin’s group at University of Seoul. Modeling NC FETs has been focused on reproducing measured hysteresis P-V curves based on experimental data from University of Seoul. Manual tweaking of modeling parameters to accomplish such purpose is strenuous, yet time-consuming and unreliable. This appointee proposed a Least-Square-Fit (LSF) optimization procedure to “automate” the task which delivers minimum error between predicted and measured P-V curves. The results looks reasonably good. The goal of this special task is to achieve the predicted P-V curves to be close to the measured ones in all different voltage ranges. Constrained LSF procedure may be used to achieve best results in some specific voltage ranges.
(2) MIM diode characterization and modeling
The task here belongs to SDML R-RAM research project. A comprehensive array of test structures have been designed by a student who already graduated. At the first look, the test structure deign
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appears to be comprehensive, however, a second thought also soon surfaces up to suspect if the design is flawed due to the fact that the fabrication of theses test structures involve dry (plasma) etching to metal electrodes which could cause unwanted plasma charging effect on the insulator of the MIM diodes. The suspicion was indeed confirmed by the experimental data which show increasing trend on current density (i.e., current per unit area) of MIM diodes versus their insulator line-width – the narrower line-width, the higher MIM diode current density.
The above indicates that the MIM insulators of narrower line-width get more leaky after the plasma etch process during patterning of the MIM top electrodes. This is a sign that the MIM insulators experienced stress and subsequently become degraded in the quality. The culprit of this MIM insulator degradation phenomenon was traced to the teste structure layout design. The probing pad of every test structure is of the same size (i.e., 100 x 100 um). It is this large probing pad which is patterned via plasma etch that caused the problem. Nonetheless, the accidental design as such, which might defeat the original purpose of design, can provide researchers insights into the metal-patterning dry etching effect on MIM diode performance. With such realization and utilizing the existing test structure design, we basically turn the probing pads in the design into a role of serving as a plasma charging injector.
We observed that the above plasma charging degradation phenomenon is similar to those observed in aluminum interconnect patterning steps during IC manufacturing. The plasma charging effect depends on the periphery length of the metal patterns. We also identified another plasma-involved step in MIM fabrication process, the photo-ashing process, could also affect MIM diode performance and the plasma effect here would depend on the area of the probing pads.
We are in a process of collecting more experimental data to thoroughly study the above phenomenon.
Some data are already being analyzed. The results are expected to be published in next 3 to 6 months.
The targeted Journals are IEEE Trans. on Electron Devices, IEEE EDL and IEDM. Two to three papers are expected as a results of this study here.
Recently-Published Journal Articles by this Appointee
[1] Wallace Lin, “Physical-Model Guided Design on Transistor Test Structures for
Extracting Metal Charging Design Rules,” IEEE Trans. Electron Devices, vol. 64, no. 4, pp.
1674–1682, April 2017.
[2] Wallace Lin, “Plasma Charging Behavior of P-MOSFETs with Floating Bond Pads and
Its Application to Charging-Safe Bond Pad Design,” IEEE Trans. Electron Devices, vol. 63, no. 7, pp. 2722–2728, July 2016.
[3] Wallace Lin, “Bond-pad Charging Protection Design for Charging-Free Reference
Transistor Test Structures,” IEEE Trans. Electron Devices, vol. 63, no. 1, pp. 272–279, Jan. 2016.
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二、研究或教學或科技研發與管理成效評估（由計畫主持人或單位主管填寫）
Please evaluate the performance of research, teaching or science and technology R&D and management Work: (To be completed by Project Investigator or Head of Department/Center)
(1)是否達到延攬預期目標？
Has the expected goal of recruitment been achieved?
It has been steadily moving toward achieving the expected goal of recruitment.
(2)研究或教學或科技研發與管理的方法、專業知識及進度如何？
What are the methods, professional knowledge, and progress of the research, teaching, or R&D and management work?
The appointee is applying to his work at NCKU with the R&D methodology and the management skill he learned from years of work at Intel’s Technology Development and Manufacturing Divisions. The core essence of Intel’s value - “Result-Oriented”, “Risk-Taking” and “Doing Right Thing Right” are being brought in and implemented at NCKU by this appointee.
(3)受延攬人之研究或教學或科技研發與管理成果對該計畫(或貴單位)助益如何？
How have the research, teaching, or R&D and management results of the employed person given benefit to the project (or your unit)?
The appointee’s three recently-published IEEE T-ED papers has provided credit to NCKU.
(4)受延攬人於補助期間對貴單位或國內相關學術科技領域助益如何？
How has the employed person, during his or her term of employment, benefited your unit or the relevant domestic academic field?
The answer to how the unit here was benefited has been given in Item (3) in the above. The benefit to the unit here should have its effect steadily propagating into the relevant domestic academic field as the time goes by
(5)具體工作績效或研究或教學或科技研發與管理成果：
Please describe the specific work performance, or the results of research, teaching, or R&D and management work:
The appointee has been productive in research and in disseminating important results to the research community via publications in leading International Journals.
(6)是否續聘受聘人? Will you continue hiring the employed person? □續聘Yes █不續聘No
※ 此報告表篇幅以三～四頁為原則。This report form should be limited to 3-4 pages in principle.
※ 此表格可上延攬優秀人才成果報告繳交說明網頁下載。
This report form can be downloaded in http://scholar.lib.ncku.edu.tw/explain/
