Investigation of SiGe MOS Devices Prepared by Liquid – Phase -Deposition 詹軒榮、黃俊達
E-mail: [email protected]
ABSTRACT
Silicon dioxide (SiO2) has been grown on SiGe film by using liquid-phase deposition (LPD) methods with H2SiF6 and H3BO3 at room temperature. In this study, the concentrations of H2SiF6 and H3BO3 were 0.4 and 0.01 M, respectively, for temperature of 30
℃. We found that the growth rate of SiO2 would increase with increasing of temperature and H3BO3 concentration. No Ge pileup was found at interface of SiGe and SiO2 by using Auger electron spectrometer (AES) and electron spectroscopy of chemical analysis (ESCA) showed that the Si-2p appears at 103.4 eV with a full width at half maximum (FWHM) of 1.48 eV. The infrared absorption spectrum of SiO2 was measured by Fourier transform infrared spectroscopy (FTIR) and revealed that the wave numbers located 810 and 1100㎝-1, belonging to to the bending stretching and vibration modes of Si-O-Si bonding, moreover a peak of Si-F bonding appeared at 933㎝-1. A metal-oxide-semiconductor (MOS) device of SiGe was fabricated with above conditions. A leakage current density of 8.69×10-9 A/㎝2 was found at 2 MV/cm. With increasing of temperature to 400 ℃, the fixed oxide charge density and interface charge density were improver from 3.82×1010 cm- and 3.25×1011 eV-1㎝-2 to 4.77×109 cm-2 and 1.15×1011 eV-1
㎝-2, respectively. For a study of MOS photodetectors, the dark current was reduced from the non-annealed samples of 3.25
×10-8A to 4.46×10-9A for the 400 ℃ annealed samples. The photo to dark current ratio was 3.17×104 for 200 ℃ annealed samples with 850 nm illumination. The responsivity was 0.567A/W for non-annealed samples. Keywords：liquid-phase deposition
、metal-oxide-semiconductor、photodetectors
Keywords : Liquid – Phase - Deposition Liquid – Phase - Deposition Liquid – Phase - Deposition Table of Contents
目錄 封面內頁 簽名頁 授權書．．．．．．．．．．．．．．．．．．．．．．．．iii 中文摘要．．．．．．．．．．．
．．．．．．．．．．．．iv 英文摘要．．．．．．．．．．．．．．．．．．．．．．vi 誌謝．．．．．．．．．．．
．．．．．．．．．．．．．．vii 目錄．．．．．．．．．．．．．．．．．．．．．．．．．viii 圖目錄．．．．．．
．．．．．．．．．．．．．．．．．．xi 表目錄．．．．．．．．．．．．．．．．．．．．．．．．xiii 第一章 緒論
．．．．．．．．．．．．．．．．．．．．．．1 第二章元件製程．．．．．．．．．．．．．．．．．4 2.1 簡介．．
．．．．．．．．．．．．．．．．．．．4 2.2 矽鍺薄膜之製程．．．．．．．．．．．．．．．．4 2.3 MOS元件製作 過程．．．．．．．．．．．．．．6 2.3.1基板的清洗步驟．．．．．．．．．．．．．．6 2.3.2歐姆電極的製程．．．
．．．．．．．．．．．6 2.3.3氧化層的沉積與爐管退火．．．．．．．．．．7 2.3.4閘極電極的製作．．．．．．．．
．．．．．．7 2.4 MIS元件製作過程 ．．．．．．．．．．．．． 9 第三章 儀器介紹．．．．．．．．．．．．．．．
．．．．． 10 3.1蒸鍍機系統．．．．．．．．．．．．．．．．．． 10 3.2爐管退火．．．．．．．．．．．．．．．
．．．． 10 3.3液相沉積．．．．．．．．．．．．．．．．．．． 11 3.3.1 液相沉積二氧化矽之製作．．．．．．．．
．．11 3.3.2 LPD的化學成長反應說明．．．．．．．．．12 3.3.3 LPD方法以及系統．．．．．．．．．．．． 13 3.3.4 LPD氧化層在矽鍺基板之沉積速率．．．．．15 3.4傅利葉轉換紅外光譜儀．．．．．．．．．．．．． 17 3.5化學分析電 子儀or X光光電子能譜圖．．．．．．．18 3.6 AES縱深分析．．．．．．．．．．．．．．．．． 18 第四章 實驗結果與 討論．．．．．．．．．．．．．．．．．20 4.1 MOS之材料分析．．．．．．．．．．．．．．．． 20 4.1.1 化學分析 電子儀．．．．．．．．．．．．． 20 4.1.2 傅利葉轉換紅外光譜儀．．．．．．．．．． 21 4.1.3 AES縱深分析．．．
．．．．．．．．．．．． 23 4.2 MOS之電流-電壓分析．．．．．．．．．．．．．． 25 4.3 MOS之電容-電壓分析．．
．．．．．．．．．．．．26 4.3.1 簡介．．．．．．．．．．．．．．．．．． 26 4.3.2 Al/LPD-SiO2/P-SiGe的電容特 性研究．．．． 30 4.3.2-1 MOS之固定氧化層電荷密度．．．．31 4.3.2-2 MOS之介面缺陷密度．．．．．．．32 4.4 MIS 紅外光光檢測器．．．．．．．．．．．．． 35 第五章 結論．．．．．．．．．．．．．．．．．．．．．． 40 參考文 獻．．．．．．．．．．．．．．．．．．．．．．．42 圖目錄 圖1-1 SiGe成長在Si上時之strain和relax狀況．．．．．
．2 圖1-2 SiGe成長在Si上時，形變與薄膜厚度的關係圖．．．．3 圖2-1 MOS元件製作流程圖．．．．．．．．．．．．
．．． 8 圖2-2 MIS元件製作流程圖．．．．．．．．．．．．．．．．9 圖3-1 爐管退火系統．．．．．．．．．．．．
．．．．．．．11 圖3-2 LPD系統．．．．．．．．．．．．．．．．．．．．．14 圖3-3 LPD流程圖．．．．．．．．
．．．．．．．．．．．．15 圖3-4 不同的硼酸濃度在沉積一小時的氧化層厚度．．．．．．16 圖3-5 沉積速率與溫度的 關係．．．．．．．．．．．．．．．17 圖4-1 為其未退火LPD-SiO2之ESCA分析圖．．．．．．．． 20 圖4-2 未退火
與200 oC、300 oC、400 oC LPD- SiO2之紅外光譜吸收圖．．．．．．．．．．．．．．．．．．．．．．22 圖4-3 未退 火LPD- SiO2之AES縱深分析．．．．．．．．． 24 圖4-4 400℃LPD- SiO2之AES縱深分析．．．．．．．．．． 24 圖4-5 未退火之電流密度-電壓圖．．．．．．．．．．．．． 26 圖4-6影響氧化層電性之電荷來源圖．．．．．．．．．．．
．27 圖4-7 未退火與退火200 oC、300 oC、400 oC的C-V圖．．．．30 圖4-8 未退火之G-V圖．．．．．．．．．．．．．
．．．．32 圖4-9 200 oC之G-V圖．．．．．．．．．．．．．．．．． 33 圖4-10 300 oC之G-V圖．．．．．．．．．．
．．．．．．．33 圖 4-11 400 oC之G-V圖．．．．．．．．．．．．．．．． 34 圖 4-12 不同退火溫度的界面缺陷密度．
．．．．．．．．．．35 圖4-13 不同退火溫度之電流-電壓圖．．．．．．．．．．． 36 圖4-14 未退火之光暗電流-電壓 圖．．．．．．．．．．．．．37 圖4-15 退火200℃之光暗電流-電壓圖．．．．．．．．．．． 38 圖4-16 退火300℃之光 暗電流-電壓圖．．．．．．．．．．． 38 圖4-17 退火400℃之光暗電流-電壓圖．．．．．．．．．．． 39 表目錄 表2-1 UHVCVD磊晶矽鍺薄膜成長參數表．．．．．．．．．5 表4-1 退火溫度與固定氧化層電荷密度關係表．．．．．．．31 表4-2退火溫度與介面缺陷密度關係表．．．．．．．．．．34 表4-3不同退火溫之光暗電流關係表．．．．．．．．．．
．37
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