第五章 結論與展望
5.2 未來展望
實驗結果得知 HIPIMS 鍍製的 HfO2經由不同的製程步驟處理,也能展 現出極化的現象。同時配合三組Sample 的結果相互比較,我們得知了 Sample 3 使用沉積氮化金屬給予外加應力來扭曲晶格的方式,所得到的殘留極化強 度效果是最好的。並且在 TiN 和 ZrN 兩個不同氮化金屬層在熱退火溫度方 面,量測出來的結果趨勢也不同。因此將來可以進一步分析 TiN 和 ZrN 經 熱處理後所產生之應力對 HfO2所造成的影響。除此之外,還可以嘗試鍍製 HfN 來代替現有的 TiN 以及 ZrN 結構,期望 HfN 能與 HfO2鐵電層有良好的 介面反應,同時又能帶來應力進而扭曲晶格相。
參考文獻
[1] D. Stroobandt, "Interconnect Research Influenced", IEEE Solid-State Circuits Magazine, Vol 2, pp. 21-27 (2010).
[2] 工研院產業經濟與趨勢研究中心及資策會資訊市場情報中心,2015 年 台灣重要產業技術發展藍圖I,工研院 IEK,2008。
[3] 劉傳璽,陳進來,第三版,半導體物理元件與製程-理論與實務,五南 文化出版社,2006。
[4] J. Valasek, Phys. Rev. 15, 537 (1920); 17, 475-481 (1920). Piezoelectric and allied phenomena in Rochelle salt.
[5] J. F. Shackelford (編譯:蔡希杰 博士) (2008 年),材料科學(第六版) [6] H.S. Choi, K.S. Seol, D.Y. Kim, J.S. Kwak, C.S. Son, and I.H. Choi, "Thermal
treatment effects on interfacial layer formation between ZrO2 thin films and Si substrates", Vacuum, Vol. 80, pp. 310–316 (2005).
[7] S. Abermann, O. Bethge, C. Henkel, and E. Betagnolli, "Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness", Journal of Applied Physics, Vol. 94, pp. 262904-1-262904-3 (2009).
[8] L. Kang, B.H. Lee, W.J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J. C. Lee,
"Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric", IEEE Electron Device Letters, Vol. 21, pp.181-183 (2000).
[9] J. Robertson, "Electronic structure and band offsets of high-dielectric-constant gate oxides", Journal of the Electrochemical Society, Vol. 114, pp. 266-274 (1967).
[10] G.D. Wilk, R.M. Wallace, and J.M. Anthony, "High-gate dielectrics: Current status and materials properties considerations", Journal of Applied Physics, Vol. 89, pp.
5243-5275 (2001).
[11] H.X. Xu, J.P. Xu, C.X. Li, and P.T. Lai, "Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different
96
ambient", Thin Solid Films, Vol. 518, pp. 6962-6965 (2010).
[12] H.S. Choi, K.S. Seol, D.Y. Kim, J.S. Kwak, C.S. Son, and I.H. Choi, "Thermal treatment effects on interfacial layer formation between ZrO2 thin films and Si substrates", Vacuum, Vol. 80, pp. 310–316 (2005).
[13] S. Pan, S.J. Ding, Y. Huang, Y.J. Huang, D.W. Zhang, L.K. Wang, and R. Liu,
"High-temperature conduction behaviors of HfO2/TaN-based metal-insulator-metal capacitors", Journal of Applied Physics, Vol. 102, pp. 073706-1-073706-5 (2007).
[14] J. Robertson, "Band offsets of wide band gap oxides and implications for future electronic devices", Journal of Vacuum Science & Technology B, Vol. 18, pp.
1785-1791 (2000).
[15] P.C. Juan, J.H. Lu, and M.W. Lu, "Improvement on reliability properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-semiconductor structures fabricated by oxygen-incorporated magnetron sputtering", Journal of the Electrochemical Society, Vol. 155, pp. 991-994 (2008).
[16] K.S. Min, C. Park, C.Y. Kang, C.S. Park, B.J. Park, Y.W. Kim, B.H. Lee, J. C. Lee, G. Bersuker, P. Kirsch, R. Jammy, and G.Y. Yeom, "Improvement of metal gate/k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric", Solid-State Electronics, Vol. 82, pp. 82-85 (2013).
[17] C.H. An, M.S. Lee, J.Y. Choi, and H. Kim, "Change of the trap energy levels of atomic layer deposited HfLaOx films with different La concentration", Applied Physics Letters, Vol. 94, pp. 262901-1-262901-3 (2009).
[18] C.H. Liu, H.W. Chen, S.Y. Chen, H.S. Huang, and L.W. Cheng, "Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics", Applied Physics Letters, Vol. 95, pp. 012103-1-012103-3 (2009).
[19] K. Yamamoto, S. Hayashi, M. Kubota, and M. Niwa, "Effect of Hf metal
predepositon on the properties of sputtered HfO2/Hf stacked gate dielectrics", Journal of Applied Physics, Vol. 81, pp. 2053-2055 (2002).
[20] M. Wittmer, J. Noser, and H. Melchior, "Oxidation Kinetics of TiN thin films", Journal of Applied Physics, Vol. 52, pp. 6659-6664 (1981).
[21] R.K. Waits, "Edison’s vacuum coating patents", Journal of Vacuum Science &
Technology A, Vol. 19, No. 4, pp. 1666-1673 (2001).
[22] C. Christou and Z.H. Barber, "Ionization of sputtered material in a planar magnetron discharge", Journal of Vacuum Science & Technology A, Vol. 18, No.
6, pp. 2897-2907 (2000).
[23] Y. Pauleau, "Generation and evolution of residual stresses in physical vapour-deposited thin films", Vacuum, Vol. 61, No. 2, pp. 175-181 (2001).
[24] R. Koch, "The intrinsic stress of polycrystalline and epitaxial thin metal films", Journal of Physics: Condensed Matter, Vol. 6, No. 45, pp. 9519-9550 (1994).
[25] C.A. Davis, "A simple model for the formation of compressive stress in thin films by ion bombardment", Thin Solid Films, Vol. 226, No. 1, pp. 30-34 (1993).
[26] W. Henry, "Intrinsic stress in sputter-deposited thin films", Critical Reviews in Solid State and Material Sciences, Vol. 17, No. 6, pp. 547-596 (1992).
[27] Y. Lifshitz, S.R. Kasi, and J.W. Rabalais, "Subplantation model for film growth from hyperthermal species: Application to diamond", Physical Review Letters, Vol.
62, No. 11, pp. 1290-1293 (1989).
[28] G.C.A.M. Janssen and J.D. Kamminga, "Stress in hard metal films", Applied Physics Letters, Vol. 85, No. 15, pp. 3086-3088(2004).
[29] V. Kouznetsov, K. Macák, J.M. Schneider, U. Helmersson, and I. Petrov, "A novel pulsed magnetron sputter technique utilizing very high target power densities", Surface and Coatings Technology, Vol. 85, No. 15, pp. 290-293 (1999).
[30] A.P. Ehiasarian, R. New, W.D. Münz, L. Hultman, U. Helmersson, and V.
98
Kouznetsov, "Influence of high power densities on the composition of pulsed magnetron plasmas", Vacuum, Vol. 65, No. 2, pp. 147-154 (2002).
[31] J. Alami and P. Thesis, "Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering", Linkoping University (2005).
[32] A. Anders, "A structure zone diagram including plasma-based deposition and ion etching", Thin Solid Films, Vol. 518, No. 15, pp. 4087-4090 (2010).
[33] K. Sarakinos, J. Alami, and S. Konstantinidis, "High power pulsed magnetron sputtering: A review on scientific and engineering state of the art", Surface and Coatings Technology, Vol. 204, No. 11, pp. 1661-1684 (2010).
[34] H. Takikawa and H. Tanoue, "Review of cathodic arc deposition for preparing droplet-free thin films", Plasma Science, IEEE Transactions on, Vol. 35, No. 4, pp.
992-999 (2007).
[35] S. Schmidt, Z. Czigány, G. Greczynski, J. Jensen, and L. Hultman, "Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/ N2", Journal of Applied Physics, Vol. 112, No. 1, pp. 013305-1-013305-11 (2012).
[36] D.J. Christie, F. Tomasel, W.D. Sproul, and D.C. Carter, "Power supply with arc handling for high peak power magnetron sputtering", Journal of Vacuum Science
& Technology A, Vol. 22, No. 4, pp. 1415-1419 (2004).
[37] S. Konstantinidis, J.P. Dauchot, M. Ganciu, A. Ricard, and M. Hecq, "Influence of pulse duration on the plasma characteristics in high-power pulsed magnetron discharges", Journal of Applied Physics, Vol. 99, pp. 013307-1-013307-5 (2006).
[38] J. Alami, K. Sarakinos, F. Uslu, and M. Wuttig, "On the relationship between the peak target current and the morphology of chromium nitride thin films deposited by reactive high power pulsed magnetron sputtering", Journal of Physics D:
Applied Physics, Vol. 42, No. 1, pp. 015304-1-015304-7 (2009).
[39] D.J. Christie, "Target material pathways model for high power pulsed magnetron sputtering", Journal of Vacuum Science & Technology A, Vol. 23, No. 2, pp. 330-335 (2005).
[40] H.J. Kim, M.H. Park, Y.J. Kim, Y.H. Lee, W. Jeon, T. Gwon, T. Moon, K.D. Kim, and C.S. Hwang, "Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer", Applied Physics Letters, Vol. 105, pp. 192903-1-192903-5 (2014).
[41] T. Olsen, U. Schröder, S. Müller, A. Krause, D. Martin, A. Singh, J. Müller, M.
Geidel, and T. Mikolajick, "Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties", Applied Physics Letters, Vol. 101, pp. 082905 (2012).
[42] M.K. Park, H.J. Kim, Y.J. Kim, W. Lee, T. Moon, C.S. Hwang, "Evolution of phases and ferroelectric properties of thin Hf0.5Zr00.5O2 films according to the thickness and annealing temperature", Applied Physics Letters, Vol. 102, pp.
242905-1-242905-5 (2013).
[43] T. Shimizu, T. Yokouchi, T. Oikawa, T. Shiraishi, T. Kiguchi, A. Akama, Toyohiko J. Konno, A. Gruverman, and H. Funakubo, "Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films", Applied Physics Letters, Vol. 106, pp. 112904-1-112904-5 (2015).
[44] M.H. Park, H.J. Kim, Y.J. Kim, Woongkyu Lee, H.K. Kim, and C.S. Hwang,
"Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes", Applied Physics Letters, Vol. 102, pp.
112914-1-112914-4 (2013).