未來展望

利用實驗設計法搭配有限元素之模擬方法，可以更清楚簡易的分析在 半導體元件中，何者因子對於半導體元件之載子遷移率是最有效的增益。

而在本研究僅討論四因子對半導體影響之效應，但是對半導體而言，其影 響之因子有許多個，所以如能討論更多因子的影響，相信對於整體的半導 體效應分析，應該可以更加完善。

而接下來對於不同長度之突出閘極寬度與源∕汲極之長度進行分析，

從結果可以得到突出的閘極寬度之影響性對於半導體其載子遷移率之增 益是影響較為大的。而本研究所討論僅為單一半導體元件之模擬，但是從

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顯影觀點而言，其製程應為串連之半導體元件，所以如能將其模擬成為串 聯之半導體元件來進行分析，相信對於模擬分析實際情形，應該可以更為 趨近於真實半導體元件。

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