鉑晶層成長氧化鋅
ZnO<101�0> // GaN<101�00>，ZnO(0001) // GaN(0001)。
(2) 以 0.075 M 前驅物濃度可在 GaN 基板上成長柱狀 ZnO 結構，經拋光
面的六角凹槽形貌。因此，水熱法成長之 ZnO 極性是依照 GaN 基板 之極性而定。
(4) 使用檸檬酸鈉做為改質劑減低 c 軸向成長速度，促進側向成長可促使 ZnO 晶柱聚合成連續膜，其連續膜結晶品質佳，經測量(0004) XRC 之 半高寬為 345 arcsec。
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