本論文實現了兩顆應用於 Ka 頻段的混頻器電路，皆使用標準 65-nm CMOS 製程，分別介紹於第三章和第四章，第三章為設計一標準 Fundamental 混頻器架 構並加上 LO 端線性提升技術(LO boosting linearization technique)來實現，操作頻 率在 36 GHz 至 41 GHz 間，經過實際模擬比較後發現，在 LO 端使用 Double turn 1:2 transformer-based balun 這種 Balun 和搭配適當的匹配電感後，能比傳統 Marchand Balun 達到整體電路更佳的線性度，並且發現使用可變電容做為 LO 端 線性提升技術的元件時，調整可變電容偏壓改變電容值並無法影響整體電路的特 性，也就是這個方式對線性度的改善是無效的，另外還發現 LO 端進入電晶體閘 極端的電壓訊號擺幅，會與整體的 OP1dB 存在正比關係，當一定範圍內在 LO 使 用更大的匹配電感或從傳統 Marchand Balun 更換成 Double turn 1:2 transformer-based balun 時，進入電晶體閘極端的電壓擺幅也隨之增大，對應的 OP1dB 也變 大，可以藉由對波形的觀察去探討哪種匹配方式能獲得更佳線性度。
第四章為設計一標準 Sub-Harmonic 混頻器架構並加上 LO 端線性提升技術 (LO boosting linearization technique)來實現，操作頻率在 36 GHz 至 41 GHz 間，經 過實際模擬比較後發現，雖然不同於 Fundamental 時兩種不同 Balun 有不一樣的 表現，但在匹配電感後面加入 Varactor 情況下，Transformer-based balun 有比傳統 Marchand Balun 能達到更高的轉換增益和線性度，並在模擬和實際量測過程中發 線調整 Varactor 的偏壓改變電容值時，能大大改變整體電路的轉換增益和線性度，
而這現象在使用傳統 Marchand Balun 下並不存在，而在波形分析部分也發現，加 上可變電容後確實能增大進入電晶體閘極端的波形擺幅，得到更大的 OP1dB。
表 5-1 是將基礎混頻器與次諧波混頻器放在一起比較，以基礎混頻器來說，
我的 FoM 是較佳的，但所使用的 LO 端線性提升技術是沒作用的，可以推論在此
製程下的被動混頻器不需要特別使用線性提升技術就可達到原本就有的不錯特 and current reused
up Fundamental
double-balanced ring with IF buffer
up Fundamental
double balanced Gilbert cell
up
active balun and ance stage
LO boosting LO boosting N/A N/A LO boosting
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自傳
我是劉文弘，生於台北市，大學時於國立中山大學就讀電機工程學系，畢業 後選擇在國立臺灣師範大學攻讀碩士學位，跟隨蔡政翰教授開始對射頻積體電路 的研究。就讀研究所期間，主要從事功率放大器以及混頻器的設計，過程中學習 到寶貴的實作經驗、研究方法和技巧，以及非常多與射頻電路相關的知識，還有 提升使用模擬軟體、文書處理和報告與量測的能力，甚至是合作與負責任等精神 與態度。
學術成就
1. 實現一 38 GHz 被動式基礎混頻器，加入 LO 端線性提升技術，藉以提升整體 電路的線性度和其他效能。
2. 實現一 38 GHz 被動式次諧波混頻器，加入 LO 端線性提升技術，藉以提升整 體電路的線性度和其他效能。