結論

本論文所提出之適用於 AlGaN/GaN HEMT 功率電晶體二驅動電路設計，主 要著重於上橋電路設計部份，在驅動一般加強型電晶體下，可以藉由本論文 3.3 節所設計的不使用高崩潰電壓元件之加強型上橋驅動電路，先使用二極體來限制 其中的電晶體的「汲極－源極」電壓差，再利用電容來承受高電壓差。此時其位 準轉換器就不必包含具高崩潰電壓的電晶體來承受大的電壓差 ；而在驅動 AlGaN/GaN HEMT 功率電晶體下，可以使用本論文 3.4 節所設計之空乏型上橋 驅動電路設計，雖然輸出電壓高電位下啟動電路仍需要高崩潰電壓的電晶體，但 已可讓電路正常運作，並改善效率。

3.4.3 節 Hspice 模擬以及 3.4.4 節實際做實驗中可驗證 AlGaN/GaN HEMT 閘 極驅動電路在輸出 24V，切換頻率 10K Hz 下運作正常。

在增加 AlGaN/GaN HEMT 崩潰電壓閘極驅動電路設計的部分，因傳統的提 高氮化鎵電晶體崩潰電壓的方式大多是透過製程設計、製程參數設計或是元件設 計來達成。這些作法可能面臨提高崩潰電壓與增加漏電流之間的取捨，且無法適 用於已製作完成的氮化鎵電晶體。本論文提出以電路設計方式來增加氮化鎵電晶 體的崩潰電壓，因此非常具有彈性，且可應用於已製作完成的氮化鎵電晶體，雖 然在 4.4 節顯示實際運用在 GaN 電晶體上增加崩潰電壓的幅度並不大，但在運 用上已是一項突破。

本論文同時提出兩種電路設計，並詳細說明此二驅動電路如何在不影響氮化 鎵電晶體正常開關的情形下，達成上述目的。

5.2 未來計畫

AlGaN/GaN HEMT 閘極驅動電路未來的工作上，除了將啟動電路也改為可 以不使用高崩潰電壓電晶體之電路外，也須提升電路操作頻率，並將此電路設計 成積體電路(ICs)，可使電路運作上減少許多不必要的寄生元件效應(寄生電容、

寄生電感、寄生電阻)增加運作效率，並讓以後在閘極驅動電路運用上更為方便。

增加 AlGaN/GaN HEMT 崩潰電壓閘極驅動電路設計未來的工作上，除了改 善限制電流後反而導致 AlGaN/GaN 電晶體閘極電壓上升的問題外，也需要改善 此驅動電路的操作頻率，使操作頻率能更一步的提高，凸顯 AlGaN/GaN 電晶體 的優勢。

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