我們利用分子束磊晶結合黃光微影以及蝕刻等製程，可以製作出能精確控制其形狀、
尺寸以及位置的微米捲管元件。利用磊晶控制樣品應變雙層薄膜的材料以及厚度，我們 可以預測並經實驗來驗證捲管的直徑大小。而利用光激發螢光系統來量測磊晶樣品，則 我們可以得知樣品的發光特性。
首先針對光激發微米捲管元件，我們利用微光激發螢光系統來量測捲管光學特性，
在低溫 77K 以及室溫條件下，都能夠量測到光波在捲管管壁間全反射所產生的光學共振 模態。在本實驗中我們分別量測了懸空微米捲管，轉移至異質基板上的捲管，以及懸空 在蝕刻溝槽上的捲管，並針對其微光激發螢光量測光譜、光學共振模態，以及計算得出 的共振模態 Q 值與捲管半導體材料等效折射率等作分析，與理論預測作比較後發現微米 捲管的光學特性皆大致符合預測結果。而在室溫的條件下量測，我們更發現捲管的光學 特性已經達到了類似於雷射的條件，僅管受限於量測系統極限而無法準確求得雷射閥值，
但是可推測閥值極低或近乎為零閥值。
接著是我們所設計的橫向 PN 接面電激發捲管元件，量測並分析在不同製程條件下 樣品 PN 接面的 I-V 圖特性，找出最佳的製程條件。而在電激發捲管元件完成後，我們 再對其作光激發量測並分析，確認其光學特性仍然完好且與光激發捲管元件的量測結果 相似。
我們相信光激發捲管元件只要能夠再進一步對其作軸向的光學局限，並探討相關的 軸向模態影響，就有潛力能夠再得到更好的光學特性並達到雷射條件。而儘管電激發捲 管元件目前還無法作電激發量測，但是只要再適當改進元件的設計以及製程，我們相信 未來就能在電激發下測得捲管的光學共振模態，並進一步地往實際應用來發展。
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簡歷
姓名：孫耘 (Sun, Yun) 性別：女
出生年月日：民國 77 年 2 月 23 日 籍貫：台灣省台北市
學歷：
國立交通大學電子物理系學士 (95.9~99.6) 國立交通大學電子所碩士班 (99.9~102.3)
碩士論文題目：
三五族半導體微米捲管及其光電特性研究
III-V Semiconductor Rolled-up Microtubes and Their Optoelectronic Characteristics