PSrT capacitor will be very promising solutions for new generation NVRAM cell capacitor due to its outstanding ferroelectric properties, but the integration issues shall be the big challenges for the practical applications. Therefore, the low temperature is indeed necessary for the implementations of PSrT capacitor. Besides, PSrT film is also a superior candidate for the applications of thermistor sensor due to its strong NTCR behavior and large resistance range in the temperature range of 100 – 390 oC. Some of the innovative topics are worth to further investigate and listed below.
1. Large area ELA treatment is necessary for practically industrial applications of PSrT thin films due to high throughput and good uniformity requirements.
Although scanning ELA system has been widely applied on TFT industry, it still lacks systematical system for PSrT thin film capacitor.
2. Low-temperature PSrT capacitor over a bit-line (COB) can be further integrated with CMOS circuits to recognize its data retention and real operation performance in NVRAM.
3. Low-temperature PSrT film can be further implemented in ferroelectric gate FET (1T FeRAM) to investigate the drain current of Ion/Ioff, data retention and nondestructive read-out (NDRO) in NVRAM.
4. Film-type PSrT can be further studied the mechanisms of TCR and integrated with MEMS devices to recognize the application of thermistor sensor.
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簡 歷
姓 名：王志良 性 別：男
出生年月日：民國 六十三 年 十二 月 九 日 地 址：台北縣樹林市俊英街 101 巷 2 號 6 樓 學 歷：國立成功大學 材料科學及工程學系
(八十二 年 九 月 ～ 八十六 年 六 月) 國立成功大學 材料科學及工程研究所碩士班 (八十六 年 九 月 ～ 八十八 年 六 月) 國立交通大學 電子工程研究所博士班 (八十八 年 九 月 ～ 九十六 年 二 月)
論文題目：準分子雷射低溫製備之鈦酸鍶鉛薄膜元件特性分析之 研究
Study on the Characterization of Devices with
Perovskite Lead-Strontium-Titanate Thin Films
Fabricated by Excimer Laser Deposition at
Low-Temperatures
Publication List
A. International Journal
1. Jyh-Liang Wang, Yi-Sheng Lai, Sz-Chian Liou, Chen-Chia Chou, Chun-Chien Tsai, Chuan-Ping Juan, Huai-Yuan Tseng, Chueh-Kuei Jan, and Huang-Chung Cheng, “Structural and Electrical Investigations of Pulse-Laser-Deposited (Pb,Sr)TiO3 Films at Various Oxygen Partial Pressures”, accepted by J. Electrochem. Soc., 2007.
2. Jyh-Liang Wang, Der-Chi Shye, Yi-Sheng Lai, Huai-Yuan Tseng, Chuan-Ping Juan, Chun-Chien Tsai, and Huang-Chung Cheng,
“Polarization Degradation and Breakdown of Pulse-Laser-Deposited (Pb,Sr)TiO3 Films at Low Temperatures”, Jpn. J. Appl. Phys., vol. 46, pp.
267-271, 2007.
3. Jyh-Liang Wang, Yi-Sheng Lai, Trent Gwo-Yann Lee, Bi-Shiou Chiou, Chun-Chien Tsai, Huai-Yuan Tseng, Chueh-Kuei Jan, and Huang-Chung Cheng, “Characteristics of Low-temperature Pulse-Laser-Deposited (Pb,Sr)TiO3 Films in Metal/Ferroelectric/Silicon Structure”, J. Phys. D:
Appl. Phys., vol. 40, pp. 254-259, 2006.
4. Jyh-Liang Wang, Yi-Sheng Lai, Bi-Shiou Chiou, Huai-Yuan Tseng, Chun-Chien Tsai, Chuan-Ping Juan, Chueh-Kuei Jan, and Huang-Chung Cheng, “Study on Fatigue and Breakdown Properties of Pt/(Pb,Sr)TiO3/Pt Capacitors”, J. Phys.: Condens. Matter, vol. 18, pp. 10457-10467, 2006.
5. Yi-Sheng Lai, J. S. Chen, and Jyh-Liang Wang, “Interlayer Growth and Electrical Behavior of Ta2O5/SiOxNy/Si Gate Stacks”, J. Electrochem. Soc.,
vol. 151, no. 6, pp. F135-F140, 2004.
6. J. S. Chen, and J. L. Wang, “Diffusion Barrier Properties of Sputtered TiB2
between Cu and Si”, J. Electrochem. Soc., vol. 147, no.5, pp. 1940-1944, 2000.
7. J. L. Wang, Y. H. Su, and C. Y. A. Tsao, “Structural Evolution of Conventional Cast Dendritic and Spray-cast Non-dendritic Structures during Isothermal Holding in the Semi-solid State”, Scripta Materialia, vol.
37, no.12, pp. 2003-2007, 1997.
B. International Proceedings & Conferences
1. Jyh-Liang Wang, Chueh-Kuei Jan, Der-Chi Shye, Meng-Wei Kuo and Huang-Chung Cheng, “Characteristics of (Pb, Sr)TiO3 Films Post Treated by Low Temperature Technologies”, Electrochemical Society Proceedings, vol. 22, Physics and Technology of High-k Gate Dielectrics II, pp. 469-478, 2003.
2. J. L. Wang, and J. S. Chen, “TiB2 as a Diffusion Barrier for Cu/<Si>
Metallization”, Mat. Res. Soc. Symp. Proc., vol. 563, pp.33-38, 1999.
3. Chun-Chien Tsai, Hsu-Hsin Chen, Yao-Jen Lee, Kai-Fang Wei, Jyh-Liang Wang, Bo-Ting Chen, and Huang-Chung Cheng, “High-Performance Double-Gate LTPS Thin Film Transistors Fabricated by Excimer Laser Irradiation”, 2007 International Thin Film Transistors Conference (ITC'07 in conjunction with SID-Mid Europe Chapter Spring Meeting), Rome Italy, pp. 44-47,January 25-26, 2007.
4. Chun-Chien Tsai, Hsu-Hsin Chen, Yao-Jen Lee, Kai-Fang Wei, Jyh-Liang
Wang, Bo-Ting Chen, and Huang-Chung Cheng, “High-Performance
Self-Aligned Bottom-Gate LTPS TFTs Fabricated by Excimer Laser Irradiation with Backside Exposure Photolithography”, 2007 International Thin Film Transistors Conference (ITC'07 in Conjunction with SID-Mid Europe Chapter Spring Meeting), Rome Italy, pp. 134-137, January 25-26, 2007.
5. Chun-Chien Tsai, Hsu-Hsin Chena, Yao-Jen Lee, Kai-Fang Wei, Jyh-Liang Wang, Bo-Ting Chen, and Huang-Chung Cheng, “Location-Controlled
5. Chun-Chien Tsai, Hsu-Hsin Chena, Yao-Jen Lee, Kai-Fang Wei, Jyh-Liang Wang, Bo-Ting Chen, and Huang-Chung Cheng, “Location-Controlled