Chapter 4 Conclusions and recommendations for future works
4.2 Recommendation for future works
1)
Use Co and SiO2 co-sputter that can let the Co dots surround by SiO2. It can get batter isolation in each dot.2) Find other metal material has large work function.
3) Used TEM analysis to find exactly dot density and some problems which make poor retention.
4) Use high-K material and metal dots simultaneously to improve data retention.
5) Use cobalt to manufacture nonvolatile memory device. Some high temperature process step in MOSFET manufacture after metal film anneal must be avoid. High temperature process can make metal dots unstable or affect other character. One high temperature process will be encounter that is after S/D implant anneal. We can use implant S/D and anneal before gate oxide growth. After S/D anneal, star gate oxide growth and following process. And use metal gate TiN can avoid in furnace system that to deposition poly-gate.
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