Simulation Results

Input impedance matching is characterized in Fig. A.3.3, which reveals the simulated

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input return loss of better than -10 dB is attained over the 3-8 GHz. Fig A.3.4 shows the simulated power gain over the group1~3 of ultra wide-band receiver front-end achieves a power gain of 19-21.5 dB. The simulated method of conversion power gain adopts to fix LO frequency at center frequency and to sweep RF frequency from low band frequency to high band frequency. Fig A.3.5 shows the simulated noise figure of the circuit, which achieves noise figure of 4.3-6.2 dB from 3.1 to 8 GHz with IF=100 MHz.

Fig A.3.6 shows the input 1-dB compression point of the circuit, which is from -25.5 to -27.5 dBm. A two-tone test for the in-band third-order intercept point (IIP3) by sweeping the input power level was simulated at 3.1 GHz, 5.1 GHz and 8.1 GHz with tone spacing of 1 MHz. The output levels of the fundamental tone and the third-order intermodulation distortion are shown in Fig A.3.7 (a)-(c). An input IP3 (IIP3) of -15~-17.5 dBm is extrapolated. The supply voltage is 1.5 V and measured core current consumption is 13.1 mA. The performance of the RF front-end is finally summarized in Table A.1. Table A.2 lists the comparison of the recently ultra wide-band front-end circuit with this work.

1 2 3 4 5 6 7 8 9 10

Frequency (GHz) -20

-18 -16 -14 -12 -10 -8 -6 -4 -2 0

S11 (dB)

Sim S11

Fig A.3.3 Simulated S11 of the front-end circuit

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3.168 3.696 4.224 4.752 5.28 5.808 6.336 6.864 7.392 7.92 Freqency (GHz)

13 14 15 16 17 18 19 20 21 22 23 24

Conversion Gain (dB)

Conversion Gain

Group1 Group2 Group3

Fig A.3.4 The simulated conversion power gain of the front-end circuit

3.1 3.6 4.1 4.6 5.1 5.6 6.1 6.6 7.1 7.6 8.1 8.6 Frequency (GHz)

4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

NF (dB)

1 MHz 10 MHz 100 MHz

264 MHz 528 MHz

Fig A.3.5 The simulated noise figure of the front-end circuit

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Fig A.3.6 The P1dB of the front-end circuit

-55 -50 -45 -40 -35 -30 -25 -20 -15 -10

Power RF (dBm) -140 Power RF (dBm)

-140

Power RF (dBm) -140

Fig A.3.7 Third-order intercept point of the circuit

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Table A.1 Simulated performance of the UWB receiver front-end

Table A.2 Comparison of recently UWB front-end circuit

# at 5 GHz Reference

Specification

This Work . Sim.

Process CMOS 0.18um

Band Width 3.1-8.1

Supply Voltage(V) 1.5

RF Return Loss <-10

LO Power (dBm) -5

Conversion Power Gain 19-21.5

DSB NF 4.3-6.2

Total Power (mW)

CMOS 3.1-10.6 1.5 22.9~26.4 4.8-7.7 -11.3 57.6 [25] 2005

(Meas.)

0.25um

SiGe 3.1-10.6 2.7 20.6~21.8 4.1-6.2 -12.8 83

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Vita and Publication

姓 名: 熊子豪 學 歷:

國立新竹高級中學 ( 87 年 9 月 ~ 90 年 6 月)

私立逢甲大學電子工程學系 ( 90 年 9 月 ~ 94 年 6 月) 國立交通大學電信工程所碩士班 ( 94 年 9 月 ~ 96 年 6 月)

Publication Remarks:

1. Zi-Hao Hsiung and Christina F. Jou, “Novel Wideband CMOS LNA with Only an inductor as input matching network”, IEEE TENCON Conference, October 30 – November 2, 2007, Taipei, Taiwan.

2. Hui-I Wu, Zi-Hao Hsiung and Christina F. Jou, “A 0.75V CMOS Low-Noise Amplifier for Ultra Wide-band Wireless Receiver”, PIERS 26-30 March, 2007 in Beijing, China.

3. Win-Ming Chang, Zi-Hao Hsiung, Christina F. Jou “Ka-band 0.18 um CMOS low noise amplifier with 5.2 dB noise figure” Microwave and optical technology letters, Published Online: 27 Mar 2007 (p 1187-1189)