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射頻金氧半場效電晶體之電性效應與元件模型

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國立交通大學

電子工程學系電子研究所

博士論文

射頻金氧半場效電晶體之電性效應與元件模型

Electrical Stress Effects and Device Modeling of RF MOSFETs

研究生：高瑄苓

指導教授：荊鳳德博士

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