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超薄閘極氧化層CMOS元件軟崩潰效應研究(II)

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Table 2.1 The ratio of I d /(I s +I d ) and I b /(I s +I d ) before and after soft breakdown in  four SOI MOSFETs
Table 4.1 Calculated distributions of channel holes in the lowest three sub-bands.

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