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無摻雜GaAs/AlGaAs量子井之橫向p-i-n二極體

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Figure 4. 9 Electroluminescence spectra of the lateral 2D p-i-n diode at temperature of 4 K with with p-TG and n-TG biasing at V p tg = -3 V and V n tg = +6 V, respectively and p-SG and n-SG biasing at V p sg = -0.6 V and V n sg = +0.9 V, respectiv
Figure 1.4 Fabrication of lateral p-n junction by employing the amphoteric nature of the Si dopants on GaAs
Figure 1.5 Gell et al. Schematic diagram of a device which integration of a SAW transducer with a lateral p-n junction
Figure 1.8 Fabrication scheme of a planar p-n junction proposed by Cecchini et al.
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Motivation Other Methods Contents of Thesis Current – Voltage Characteristics of the Single-Gate Diode Electroluminescence Spectrum

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