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Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)

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Erratum: “Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting

Diodes Grown on Patterned Silicon Substrates”

View the table of contents for this issue, or go to the journal homepage for more

2011 Appl. Phys. Express 4 039201

(http://iopscience.iop.org/1882-0786/4/3/039201)

(2)

Erratum: ‘‘Reduction of Efficiency Droop in Semipolar

ð1101Þ InGaN/GaN

Light Emitting Diodes Grown on Patterned Silicon Substrates’’

[Appl. Phys. Express 4 (2011) 012105]

Ching-Hsueh Chiu, Da-Wei Lin, Chien-Chung Lin

1

, Zhen-Yu Li, Wei-Ting Chang

3

, Hung-Wen Hsu,

Hao-Chung Kuo



, Tien-Chang Lu, Shing-Chung Wang, Wei-Tsai Liao

3

, Tomoyuki Tanikawa

4

,

Yoshio Honda

4

, Masahito Yamaguchi

4

, and Nobuhiko Sawaki

5

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C. 1Department of Opto-Electronics Epitaxy and Devices, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, R.O.C. 2Institute of Photonic Systems, College of Photonics, National Chiao-Tung University, Tainan, Taiwan 71150, R.O.C.

3Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C. 4Department of Electronics, Nagoya University, Nagoya 464-8603, Japan

5Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan Received February 17, 2011; accepted February 17, 2011; published online March 8, 2011

We apologize that we made several mistakes in numbering of the author’s affiliation assignment, and would like to correct

them. We are sorry for any confusion that this may have caused for the readers of Applied Physics Express. The correct

author’s list and their corresponding institutes are as follows:

Ching-Hsueh Chiu, Da-Wei Lin, Chien-Chung Lin

1

, Zhen-Yu Li, Wei-Ting Chang

2

, Hung-Wen Hsu,

Hao-Chung Kuo*, Tien-Chang Lu, Shing-Chung Wang, Wei-Tsai Liao

3

, Tomoyuki Tanikawa

4

,

Yoshio Honda

4

, Masahito Yamaguchi

4

, and Nobuhiko Sawaki

5

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C. 1Institute of Photonic Systems, College of Photonics, National Chiao-Tung University, Tainan, Taiwan 71150, R.O.C.

2Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

3Department of Opto-Electronics Epitaxy and Devices, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, R.O.C. 4Department of Electronics, Nagoya University, Nagoya 464-8603, Japan

5Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

E-mail address: [email protected] Applied Physics Express 4 (2011) 039201

039201-1 # 2011 The Japan Society of Applied Physics

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