Chapter2. Solid-State Electronics

Chapter1. Introduction to Electronics

1.2

I D/A converter has VLSB= 2⁻ⁿV_{F S}.

1.5

I KVL: every cycle voltage sum = 0.

I KCL: every node current sum = 0.

Chapter2. Solid-State Electronics

2.1

I semiconductor materials bandgap energy EG (eV).

(C 碳, 5.47) (Si 矽, 1.12) (Ge 鍺, 0.66) (Sn 錫, 0.082) (Gallium arsenide 砷化鎵, 1.42)

(Gallium nitride氮化鎵, 3.49) (Indium phosphide 磷化銦, 1.35) (Boron nitride氮化硼, 7.50) (Si+C, 3.26) (Ca+Se, 1.70)

2.2

I intrinsic carrier density nⁱ (cm⁻³).

n²_i = BT³exp



−EG

kT



cm⁻⁶

I k =Boltzmann’s constant, 8.62 × 10⁻⁵ eV/K.

I T =absolute temperature, K.

I B =material-dependent parameter, K⁻³·cm⁻⁶. (Si, 1.08 × 10³¹) (Ge, 2.31 × 10³⁰)

(GaAs, 1.27 × 10²⁹) [500K Ge:10¹⁶, Si:10¹⁴, GaAs:3 × 10¹¹] I 庫倫常數一個電子的電量 −q = −1.602 × 10⁻¹⁹ C.

I Hole density p (holes/cm³).

I pn product (used in thermal equilibrium):

pn = n²_i

2.3

I electrical resistivity ρ; conductivity σ = 1/ρ.

I drift current density j = Qv (C/cm³)(cm/s)=A/cm². j =current density², charge in 庫倫 moving through an area of unit cross section

Q =charge density², the charge in a unit volume v =velocity of charge in an electric field

2.4

I electrical conductivity: σ = q(nµⁿ+ pµp)

2.6

I [n > p]:n-type, [p > n]:p-type.

I

 ND=donor impurity concentration atoms/cm³. NA=acceptor impurity concentration atoms/cm³. I charge neutrality: q(N^D+ p − NA− n) = 0.

I

( For n-type(N_D> N_A): n ∼= ND− N_A p = _N ⁿ²ⁱ

D−NA

For p-type(NA> ND): p ∼= NA− ND n = _N ⁿ²ⁱ

A−N_D

I Typical values of |N^A− ND| in range 10^14↔21/cm³.

2.7

I total impurity N^T = NA+ ND. I mobility approximations

µn= 92 + 1270 1 +

N_T 1.3×10¹⁷

0.91

µ_p= 48 + 447 1 +

NT

6.3×10¹⁶

0.76

I σ ∼= qµnn for n-type material. (p-type 類似)

Chapter3. Solid-State Diodes and Diode Cir- cuits

3.3

I Diode equation: i^D= IS[exp(vD/VT) − 1].

IS =reverse saturation current of diode (A) v_D=voltage applied to diode (V)

q =electronic charge (1.60 × 10⁻¹⁹ C) k =Boltzmann’s constant (1.38 × 10²³J/K) T =absolute temperature (K)

n =nonideality factor (dimensionless) usually n = 1 VT = kT /q =thermal voltage (V)

I typical range 10⁻¹⁸A ≤ IS ≤ 10⁻⁹A.

3.8

I Schottky barrier diode