三五族氮化合物半導體薄膜之物理特性研究---子計畫I：GaN類半導體材料及物理結構光性之研究(III)

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(3) —(III) GaN Study on optical properties and structure of GaN related compounds NSC 88-2112-M-009-021 87 8 1

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(5) . Raman scattering, scanning electron microscopy (SEM), atomic force microscopy Raman (AFM), x-ray and photoluminescence (PL) scattering

(6) SEM

(7) measurements. In our study, the phonon AFM

(8) X-ray spectra of films remain sharp without alloy PL

(9) !"#$%&'( formation after incorporation of small )*+,-./01234567809 amounts of In atoms. The SEM pictures of :;<=>?@#$ABCDE the sample surface reveal greatly reduced FGHIJKBLM.N)0OP<Q nanopits indicating better surface flatness 6?R SEM STABUVWXYZ<[ that is also supported by the AFM \].^_<`[BabcYZ<de micro-pictures and the multiple interference KBRVWABUfXYZ effect in the PL signals. More importantly, deK<g0BLhi@ PL jkA.lm isoelectronic doping has caused the linewidth n o < p q ? r m s < t u v w x at 15 K of the near-band-edge emission of GaN to decrease shaply to 10 meV or less, near-band-edge

(10) yzFJKU{|` reflecting improved optical property. [} 10 meVB~q%&'()*-1 Additionally, in order to further investigate <b?Br < the dynamic optical transitions, we used the %&'+,-1yz<= time resolved photoluminescence (TRPL) to >BuvyzB study the influences in isoelectronic In doped C time resolved PL

(11) "#$yz GaN films. < dynamic processes

(12) ? Keywords: isoelectronic doping, GaN, photoluminescence, TRPL. %&'+, 809 C.

(13) . Abstract. "BJuv ¡q@ ¢£¤B¥t@¦|80OP§ ¨ ©Cª«rt.¬® <¢£¯°?±²B-809³´<£. The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapoer deposition was investigated by 1.

(14) 0.1~0.2 Ɖm

(15) B© Hwang1 #$<3. µBz¶·B¸'B P ® ]¹K<º»B.¼½<bc? ¾tB-¿ÀÁÂ.p·<!Ã" ÄÅÆ£µ<Ç£BÈÉÊË?RÌ ÍACDB@ÎÏNÐÑªÒÑ ABÓÔ%&'+,<!"bÕÖ ,µ¹K ×Ø²+,ÙÚ¹K¸' ¹K?8+,@Û09 (+,@ Ü09 Ý+,@Þ0ß©Þ0à?áuv|Û09:;AB+,%&' 8)*uâãp·äåæçè?a -éáuv|Ü09:;B%&'(+ ,`ê¸'<¹Käæçè?² aB@ABëì%&'() *+,@809:;í"#$I1µ ©:;<g0BLîCYïðñò ¤?B scanning electron microscopy, SEM

(16) B B photoluminescence, PL

(17) #$óô"#$Ç£<1µ© Põ?. ?²a( ã45:;AB !"#[]<ç$½%<`ê?

(18) · Xä 1.1 µmol/min B!"#[]&'( )*Ê+BYZUrã,©deBa M.l-< D.?¼/<BÔ( <YZz¶0·91Ba2!"[\ ]345"B67YZ<Êde?R AUVWX3%< ª

(19) ?BR X 8 <BC DX TMIn

(20) ·Ô 0 âãX 2.12 µmol/min B(10-10)8 jk|ÆJR 34 arc min 9X 26 arc minB!:(+ ,@809:;ABÊ;b:;YZ <£µBUcabc5<<B U&t5=>?re@ rAB? R N

(21) BC +,©%&'()*+,|809: ;B@ 564 D 731 cm-1 ¥VWX80. 9| E2 © A1(LO)EF?B@+, (|Ç£ABUVWX A1(TO)EF ' 534 cm-1

(22) <FBîIÙÚj kU@G ¨ Rayleigh Scattering

(23) âHB!Ê;~q+,()*|Ç £YZÊdeîÔ5!I<ÊABa JKLMB<NOPQ?²aB TMIn

(24) ·âãBÇ£YZg6 CR/de<YZB`êÙÚS. <HKBLî A1(TO)EFjkUT< Ê%<N û( TMIn

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(26) ·"bg( `[?¥t

(27) ·Xä 1.1 µmol/min B < ·B67K 1000 BI

(28) · A1(TO)EFjk&'()*B!UV ¥ 0B0.22B0.44B1.1B2.12 µmol/min? %&'(+,W809:;<5!' Lî ªìµ SIMS

(29) =>?re@'X?B-%&'( "(<¹Kg0BI(©9<[ <+,<Ç£BLM.hYZC< 0.2 %? E — [ \ ] ú phonon-plasma SEM

(30) " interaction

(31) a=>X A1(LO)<ÆJ©' VWYZ<deK{( ·<g0BR ^B!t×_Ê%`<aQ?2 !rt CDXB-+,(<Ç£ b/BcdYÄÅ<809Ç£Êt (a)BIYZ l ½[. ö ö -Ç£<ÄÅBt C ÷(0001) <¦øùúûüB./0123ýþ Ã metalorganic chemical vapor phase epitaxy

(32) "67809:;?IA 809:; 520 B600 Å

(33) "ú buffer layer

(34) B`ê¦øùûü©8 0945:;|<5Ê ?. 2.

(35) .l-<jk¢B!tÊ%%&'+ ,<ªÒÑ? B@ 400 X 750 nm <A V W X Õ Öyz< yellow luminescence, YL

(36) BI.< ñ ¡¢B!tÔ:;lmno<? TMIn

(37) ·âãBi ñ¡¢|p £}/B!UUVÇ£YZ£d e?õ¤6F¥i¡¢FBC Di ñ¡¢<¦§¨ peak-to-valley 3 ratio

(38) Billeb #$ YCY<©ª; ½B!U&tBcdYÄÅ<809 Ç£<deKt.Ê¸<YD? r <%&'+, -1yz<=>BuvyzB C"#$< JzR 16 meV 9} 10 meVBLî@Æ ?Ò«m.¬%&'(+, 1.1 µmol/min {.|D<}~B!Ç<Æ 809:;<OB!®5 J½lçYCY<ÌÍs[?! +B(+, 2.12 µmole/min <Ç£ú I2 ÆJg[<}~U©]3 ¯Y?¼/<B°Y:B-t -qBI¹KR 1.7×1019 cm-3 9X ±.%&'(+,<Ç£IO.¼ 3×1017 cm-3 BYB(+,b809 /<Ê%²+,(<809:;< :;<ÙÚ¹K äåæçè? O 68 psBa.+,(<O YB%&'(+,Ub:;< 30 ps?³´µ¶·<tBbg KÔ 300 k 9} 12 K B+,(< < defects

(39) © vacancies

(40) ? 7 I2 jkBUfXåæC 809:;BIOÔ 68 ps m9} <jk¥@ 363 nm D 377 nmB 48 ps²a+,(<Ç£BIOL jkr/BªA -çK?IAB bg?!Ê¸_<¹ +,(< 363 nm t I3 Fa 377 nm tw— 809Ç£VWX²º<OÊ{ -<yz donor-acceptor pair, DAP

(41) B Kg0abgB»HM¨?b/t VWX{ TMIn

(42) ·R 0 âãX 2.12 ±!D.UCIº(+,<Ç£B µmol/min BI3 .[<'¶ redshift

(43) ¼rÕ<#$B3< D.B¾tw—-|yzzM.' ½Y:?×_¥<B()*ã8 ¶<D.?BI3 |ÆJR 50 meV 9 09:;A{B¬¤(+,lêBO X 25 meVBa DAP |ÆJBR 40 meV ¾¿9} 30 ps?×_¨?ÀU<ti 9X 17 meV?ÔiW+B%&'(+, D.û¤©K¬BLîÁÂÃ cb1<yz?BLf XÊ%+,809:;|IjkB <D.BtÄ@Iº³´hD? RVWX<OÊ{Kg0< 3!tÔ()*©9)*< K electronegativity

(44) 1.8 <xB ÅBÆqÇ.È<<É@ ?(,µÊË?*6BaM (+,<809ABLîIt¹. N)e5at%&'(+,|:;BLî .Æ£µ<<?RiBfWg< fh%&'(+,|809:;Ê;b :;5<<B-U.YijB 2kl@mní? opVW%&'(+,-809 : ; | C photoluminescence, PLBq

(45) <=>BrÏ2 Ç£K9} 15 KB`êspq<=> âã<K?¥@+,© (+,|Ç£ABVWXts<jk' 358 nmB!tYuvÖwxy| y z exciton bound to shallow neutral donorBI2 or D0X

(46) ?{%&'()*+ ,<âãBI2 FLM.'¶B¾tIÆ. 3.

(47) ?&YÃBÊGÈ<< ¹ -K<g0×_Ëµ?Æ Ì<(ã:;ABÈ<<×_ WuQ6?a²BÍtÉ.È<B qÇÎhDhÈ<ÏÐpqa¢ uvyz<¦¶©ÆJgJ<D.B ¾tM.VWX!"D.? ÑB(ã:;ABºÎ349 <Bh(9mî½B ØÒ-ÓÔpqÎ&Õwx¤Ö6uÖ× ØBQ6ÙZ]<ÚuÖ?!pq Ö6(809:;A¼vÖ BLOÊ{Kg0? ÛaÜBëì-%&'(+, <809:;¼r>'e<#$? ê%&'()*+,}809:;B SEM :Ç£deK<b©[\] <`ê?aRUCDCF |ÆJ.^_<9B:C <b©<<`ê?3%&'( +,<!uÝ-809:;<£µ.Y º»BLca-")ÞÄú<< ©£µ.Yjß?. A1g(Al2O3). G aN. I ntensity (arb. units ). E2. R.T. Eg(Al2O3). A1(LO). A1( TO). TMIn (µmol /mi n). 0. 0.22 0.44 1.10 2.12. 300. 400. 500. 600. 700. 800. 900. -1. Ra m a n S h ift (cm ). 16. 15K. 14 12. 2. PL I ntensity @15K (arb. units). I FW HM (meV). 6 789:A1(TO);<

(48) => ?@*+

(49) AB. 10 0. 0. I2. I. 3. 0. 5. 1.0. 1.5. 2.0. 2. 5. TM In (µm ol/ mi n). TM In (µ mol/min) DA 0 0.22 Log x200 0.44 1.10 2.12. 350 360 370 380 400 500 600 700. W a v e le n gth (n m ). I2I3 DAP

(50) 80 GaN GaN:In (2. 12 u mol/m in). (a)-(e)

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(52) . Recom bi nation Li feti me (ps). PL in stensi ty (arb. units). 300 K. und ope d Ga N G aN:In. 70 60 50 40. 30 20. 0. 200. 40 0. 60 0. 8 00. 0. . . 80. 300 K 150 K 12 K. Dec ay Time (p s). 70 60 50 40 30. !"#TMIn$% 1.1 µmol/min&'() *+&,- ./012345. 20. 0.0. 0.5. 1. 0. 1 .5. 2 .0. TM In (µ mol/ min ). 4. 2 .5. . 10 0. 200. T emperat ure (K). Ti me (ps). 30 0.

(53) \2^!! C.. Y. Hwang, M. J. Schurman, W. E. Mayo, -C. Lu, R. A. Stall, and T. Salagaj, J. Electron. Master. 26, 243 (1997). \3^!! Kosawa, T. Kachi, H. Kano, Y. Taga, and M. Hashimoto, J. Appl. Phys. 75, 1098 (1994). \4^!! A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek, Jr., Appl. Phys. Lett. 70, 2790 (1997).. 5.

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