低驅動電壓高電流密度有機薄膜電晶體

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國立成功大學「邁向頂尖大學計畫」

延攬優秀人才工作報告表

NCKU’s “Aim for the Top University Project”

Work Report Form for Distinguished Scholars □續聘continuation of employment ■離職resignation

100 年 7 月 13 日更新受聘者姓名

Name of the Employee 魏嘉余

■男 女 Male Female 聘期 Period of Employment from 101 年(y) 05 月(m) 01 日(d) to 101 年(y) 09 月(m) 30 日(d) 研究或教學或科技研發與管理計畫名稱 The project title of research,

teaching, technology development and management

低驅動電壓高電流密度有機薄膜電晶體計畫主持人（申請單位主管） Project Investigator (Head of Department/Center) 王永和教授補助延聘編號

Grant Number HUA - - -

一、研究、教學、科技研發與管理工作全程經過概述。（由受聘人填寫）

Please summarize the entire research, teaching, or science and technology R&D and management work process (To be

completed by the employee)

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圖一、有機薄膜電晶體之(a)、輸出曲線圖與(b)、轉換曲線圖。

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圖二為使用 1 nm F4-TCNQ 做為修飾層的五環素電晶體特性圖，在閘極電壓-3.6 V 下，汲極飽和電流為 20 μA，移動率為 11.27 cm2 V-1 s-1 ，此值為目前本實驗室之最高值。而轉換特性曲線顯示，臨限電壓為-1.05 伏特，開/關電流比為 3.84 × 103 ，次臨限擺幅為 316 mV/decade。與沒有加入 F4-TCNQ 修飾層的電晶體比較，移動率提升了 25 %。而利用傳輸線理論方式可有效計算出歐姆接觸值為 29.58 kΩ，此值與坊間論文比較，在低驅動電壓下，是表現相當優異，故可再提升其載子移動率至 11.27 cm2 V-1 s-1 。而相關文獻也整理完畢，如附件三。近期將與計畫主持人討論投稿期刊。除了上述所提，另外新興材料氧化石墨烯與鈦酸鋇之混合式絕緣層，應用於電阻式記憶體，也有成功示範出 1000 倍之電流開關比，相較於一般鈦酸鋇之電阻式記體約提升 100 倍，其相關文獻也成功被 2012 IEEE EDSSC 國際會議接受，如附件四。簡單列出近五個月之學術成果如下。

[1] Chia-Yu Wei, Yu-Chi Chang, Wen-Chieh Huang, and Yeong-Her Wang, “Investigation on Carrier Transports of Pentacene-based Thin Film Transistors Under 1-Pentanol Gas Environment,” will submit to APPLIED PHYSICS LETTERS.

[2] Yu-Chi Chang, Chia-Yu Wei, Yen-Yu Chang, and Yeong-Her Wang, “High Mobility Pentacene-based Thin Film Transistors with Novel Synthesized Strontium Zirconate Nickelate Gate Insulators,” will submit to IEEE TRANSACTIONS ON ELECTRON DEVICES.

[3] Chia-Yu Wei, Dei-Wei Chou, Yu-Chi Chang, Pu-Yuan Hsu and Yeong-Her Wang, “Small contact resistance in pentacene-based thin film transistors by inserting F4-TCNQ between pentacene and Au,” will submit to ORGANIC ELECTRONICS.

[4] Yu-Chi Chang, Chia-Yu Wei, Yeong-Her Wang, “Sol-gel Barium Titanate-based RRAM by Inserting Graphene Oxide Interlayer,” Oral Presentation in Bangkok, Thailand, 8th IEEE International Conference on electron device and solid state circuits, Dec 2012.

[5] Chia-Yu Wei, Yen-Yu Chang, Yu-Chi Chang, Pu-Yuan Hsu, and Yeong-Her Wang, “Synthesis for thin film of multi-component metal oxides,” No. 101123324, Taiwan Patent pending.

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二、研究或教學或科技研發與管理成效評估（由計畫主持人或單位主管填寫）

Please evaluate the performance of research, teaching or science and technology R&D and management Work: (To be completed

by Project Investigator or Head of Department/Center)

(1)是否達到延攬預期目標？

Has the expected goal of recruitment been achieved? 是

(2)研究或教學或科技研發與管理的方法、專業知識及進度如何？

What are the methods, professional knowledge, and progress of the research, teaching, or R&D and management work? 專業知識不錯，進度超過預期

(3)受延攬人之研究或教學或科技研發與管理成果對該計畫(或貴單位)助益如何？

How have the research, teaching, or R&D and management results of the employed person given benefit to the project (or your unit)? 協助實驗室管理、計畫之進行助益具體

(4)受延攬人於補助期間對貴單位或國內相關學術科技領域助益如何？

How has the employed person, during his or her term of employment, benefited your unit or the relevant domestic academic field? 協助儀器建置，進行研究，

(5)具體工作績效或研究或教學或科技研發與管理成果：

Please describe the specific work performance, or the results of research, teaching, or R&D and management work: 完成數篇質量不錯之文章及一篇專利申請

(6)是否續聘受聘人? Will you continue hiring the employed person? □續聘Yes ■不續聘No

前往台積電任職

※ 此報告表篇幅以三～四頁為原則。This report form should be limited to 3-4 pages in principle. ※ 此表格可上延攬優秀人才成果報告繳交說明網頁下載。