Characterizations of Metal Induced Lateral Crystallization Poly-Silicon 張志宇、黃俊達
E-mail: [email protected]
ABSTRACT
Recently, polycrystalline silicon（poly-Si）has received increasing attention because of its wide range application, such as Thin Film Transistor（TFT）for liquid crystal display, solar cell and image sensors. But now, the growth method of poly-Si including （1）
Low Pressure Chemical Vapor Deposition（LPCVD）（2）Solid Phase Crystallization（SPC）and（3）Laser Crystallization
（LC）.The LC method is expensive and cannot mass production due to laser annealing. However, both LPCVD and SPC methods have high growth temperature（above 600℃）, resulting in fused quartz or silicon substrate is needed, which is high cost.
In this plan, the poly-Si film is deposited by MILC（Metal-Induced Lateral Crystallization）technique under 500℃and the quality of MILC poly-Si film is better than SPC, so that the glass substrate is used; The procedure of annealing uses Two-Step RTA
（Two-Step Rapid Thermal Annealing）and is better than CFA（Conventional Furnace Annealing） to decrease time which take in the process. These is low cost and easy to mass production.
Keywords : MILC: Metal Induced Lateral Crystallization ; LPCVD: Low Pressure Chemical Vapor Deposition ; SPC: Solid-Phase Crystallization ; LC: Laser Crystallization ; Two-Step RTA：Two-Step Rapid Thermal Annealing ; CFA：Conventional Furnace Annealing
Table of Contents
封面內頁 簽名頁 授權書………iii 中文摘要………
………iv 英文摘要………v 誌謝………
………vi 個人簡歷………vii 目錄…………
………viii 圖目錄………x 表 目錄………xii 第一章 導論 1-1簡介………
………1 1-2低溫多晶矽的技術………2 1-2-1固相結晶法 (SPC:
Solid-Phase Crystallization)………3 1-2-1雷射結晶法(LC: Laser Crystallization)………4 1-2-3 金屬誘發結晶(MIC:Metal-Induced Crystallization)………4 第二章 成長之系統………
…6 2-1玻璃基板（Glass Wafer）之清洗………6 2-2電漿補助化學汽相沈積系統（PECVD System）
………6 2-3蒸鍍機系統（Thermal Evaporator System）………8 2-4退火系統（Annealing System）…
………9 第三章 金屬誘發結晶矽薄膜之原理………11 3-1背景………
………11 3-2 金屬鎳(Ni)誘發非晶矽薄膜結晶的原理………12 3-3金屬 誘發結晶 (Metal Induced Crystallization)結構與分析………13 3-3-1製作流程………
………14 3-3-2 SEM分析………14 3-3-3 X-Ray薄膜分析………
………15 3-4金屬誘發橫向結晶(Metal Induced Lateral Crystallization) 結構與分析………
………16 3-4-1製作流程………17 3-4-2 SEM分析…
………18 3-4-3 X-Ray薄膜分析………19 第 四章 兩階段快速升溫退火 （Two-Step Rapid Thermal Annealing）………20 4-1 目的………
………20 4-2退火的步驟與時間比較………21 4-3橫向結晶速 率………22 4-4氫流量對橫向結晶之影響………23 第五章 結論………24 5-1結論………
………24 5-2未來展望………25 參考文獻………
………27 REFERENCES
[1]T.Aoyama, G.Kawachi , N.Konishi, T.Suzuki, Y.Okajima and K.Miyata, J.Electrochem.Soc.,vol.136,no.4﹐pp.1169-1173﹐1989.
[2]G.Radnoczi, A.Robertsson, H.T.G.Hentzell, S.F.Gongand M.A.Hasan, J.Appl.Phy.,69（9）pp.6394-6399,1991.
[3]S.Y.Yoon, K.H.Kim and C.O.Kim, J.Appl.Phys.,82（11）,pp.5865-5867,1997.
[4] M.S.Haque, H.A.Naseemand W.D.Brown, J.Appl.Phys.,79（10）,pp.7529-7536,1996.
[5] L.Hultman, A.Robersson and H.T.G. Hentzell, J.Appl.Phys.,62（9）,pp.3647-3655,1987.
[6] S.W.Lee, Y.C.Jeon and S.K.Joo, Appl.Phys.Lett.,66（13）,pp.1671-1673,1995.
[7] S.W.Lee and S.K.Joo, IEEE-EDL,vol.17,no.4,pp.160-162,1996.
[8] S.W.Lee, T.H.Ihn and S.K.Joo, IEEE-EDL, vol.17,no.8,pp.407-409,1996.
[9] Jin Hyeok Kim, Jeong Yong Lee, Jpn.J.Appl.Phys, vol.35, pp2052-2056,1996.
[10] Soo Young Yoon, Ki Hyung Kim, Chae Ok Kim,J.Appl.phys, 82(11), pp5868-5867,1997.
[11] C.Hayzeden, J.L.Batstone, J.Appl.phys, 73(12), pp8279-8289, 1993.
[12] R.J.Nemanich, C.C.Tsai, M.J.Thompson, J.Vac.Sci.Tecgnol, 19(3), pp685-688,1981.
[13] Mingxiang Wang, Zhiguo Meng,and Man Wong, IEEE-ED,vol.47, pp.2061-2067,2000.
[14] Alain Chun-keung Chan, Hongmei Wang, and Mansun J.Chan, IEEE-EDL vol.22, pp.384-386,2001.
[15] Kee Soo Nam, Yoon Ho Song, Jong Tae Baek, Hong Jin Kong, Sang Soo Lee, Jpn.J.Appl.Phys, vol.32, pp1908-1912,1993
