Study of Silicon Dioxide Grown onto SiGe Film by Using Liquid Phase Deposition 林宏俞、黃俊達
E-mail: [email protected]
ABSTRACT
Silicon dioxide layer has been grown onto SiGe thin films by using liquid-phase-deposition (LPD) technique for the first time. In this work, different growth temperature and concentration of boric acid (H3BO3) were taken to investigate the performance of silicon dioxide. In material properties, The AFM, EDS, AES, and ESCA were measured to analyze the flatness, composition, and chemical bonding of silicon dioxide. In addition, silicon dioxide annealed was done at 4000C~6000C for 30 second. We found that annealing can harden the silicon dioxide and decrease leakage current. With slow deposition rate, the flatness of silicon dioxide is roughness and thus increases the leakage current of metal-oxide-semiconductor (MOS) devices but enhance optical performance.
Keywords : SiGe, liquid-phase-deposition, annealing, MOS
Table of Contents
目錄 封面內頁 簽名頁 授權書．．．．．．．．．．．．．．．．．．．．．．．．iii 中文摘要．．．．．．．．．．．
．．．．．．．．．．．．iv 英文摘要．．．．．．．．．．．．．．．．．．．．．．v 誌謝．．．．．．．．．．．
．．．．．．．．．．．．．．vi 目錄．．．．．．．．．．．．．．．．．．．．．．．．．vii 圖目錄．．．．．．．
．．．．．．．．．．．．．．．．．ix 表目錄．．．．．．．．．．．．．．．．．．．．．．．．xi 第一章 緒論．．
．．．．．．．．．．．．．．．．．．．．1 第二章 LPD-SiO2的方法．．．．．．．．．．．．．．．．．3 2.1 簡介
．．．．．．．．．．．．．．．．．．．．．3 2.2 矽鍺薄膜之製程．．．．．．．．．．．．．．．．3 2.3 液相沉積 二氧化矽之製作．．．．．．．．．．．．5 2.4 LPD方法以及系統．．．．．．．．．．．．．．．7 2.5 基板的清洗步 驟及沉積參數．．．．．．．．．．．8 第三章 LPD-SiO2的特性量測及MOS光檢測器的製作程序．．10 3.1 簡介．．．
．．．．．．．．．．．．．．．．．10 3.2 光譜解析橢圓測厚儀．．．．．．．．．．．．．11 3.3 化學分析電子儀or X光光電子能譜圖．．．．．．11 3.4 附加能量散步分析儀．．．．．．．．．．．．．12 3.5 原子力顯微鏡．．．．．．
．．．．．．．．．．12 3.6 場發射掃瞄式電子顯微鏡．．．．．．．．．．．13 3.7 SiGe MOS的製作流程．．．．．．
．．．．．．13 第四章 實驗結果與討論．．．．．．．．．．．．．．．．．16 4.1 SiGe氧化層的成長條件．．．．．．
．．．．．．16 4.2 LPD-SiO2/矽鍺的特性研究．．．．．．．．．．．16 第五章 結論．．．．．．．．．．．．．．．
．．．．．．．19 參考文獻．．．．．．．．．．．．．．．．．．．．．．．40 REFERENCES
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