The Effect of Plasma Treatments on the Field Emission Characteristics of SiOx Nanowires 洪違仁、李世鴻
E-mail: [email protected]
ABSTRACT
In this work, a layer of nickel was evaporated onto a (100) silicon substrate to induce the precipitation of silicon at 1000°C for 2 hours in order to grow SiOx nanowires. The thickness of nickel layer was varied to study its effects on the field emission
characteristics of SiOx nanowires. As observed from SEM graphs, the average diameter of SiOx nanowires varies almost linearly with the thickness of catalyst Ni layer. It can be concluded that thicker Ni layer produces lager and fewer catalyst balls in the nucleation stage resulting in larger and fewer SiOx nanowires. These larger and fewer SiOx nanowires in turn emit less current due to lower curvature at the tip and lower quantity of emission sites. Therefore, the thickness of Ni layer must be kept to minimum in order to obtain decent field emission characteristics. Even so, the emitted currents from SiOx nanowires are still lower than those emitted from carbon nanotube. It is found in this study that the screening effect of SiOx nanowires can be effectively reduced and the tip can be modified by Ar plasma treatment so that electrons can emit easily from the tips. On the other hand, conglomeration phenomenon of SiOx nanowires is found after CF4 plasma treatment which increases the surface density of SiOx nanowires and the number of emission sites. Hence, the field emission characteristics of SiOx nanowires are enhanced and field emission characteristics comparable to those of carbon nanotubes are achieved after plasma post-treatment. These results clearly manifest the potential of using SiOx nanowire in field emitter applications, and this is quite different to what people might think. Keywords: SiOx nanowires, field emission, metal-induced precipitation, Si-Ni alloy
Keywords : SiOx nanowires ; field emission ; metal-induced ; Si-Ni alloy Table of Contents
封面內頁 簽名頁 授權書．．．．．．．．．．．．．．．．．．．．．．．．．iii 中文摘要．．．．．．．．．．．．
．．．．．．．．．．．．iv 英文摘要．．．．．．．．．．．．．．．．．．．．．．．．v 誌謝．．．．．．．．．
．．．．．．．．．．．．．．．．．vi 目錄．．．．．．．．．．．．．．．．．．．．．．．．．．vii 圖目錄．．．
．．．．．．．．．．．．．．．．．．．．．．x 表目錄．．．．．．．．．．．．．．．．．．．．．．．．．xv 第 一章 簡介．．．．．．．．．．．．．．．．．．．．．．1 1.1奈米材料的歷史與簡介．．．．．．．．．．．．．
．1 1.2奈米材料的特徵．．．．．．．．．．．．．．．．．4 1.2.1表面效應．．．．．．．．．．．．．．．．．4 1.2.2小尺寸效應．．．．．．．．．．．．．．．．5 1.2.3量子穿隧效應．．．．．．．．．．．．．．．7 1.3 奈米材料的應用．．．．．．．．．．．．．．．．．9 1.3.1場發電子源．．．．．．．．．．．．．．．．12 1.3.2場發射電子源的特性．．．．．．．．．．．．13 1.4研究動機．．．．．．．．．．．．．．．．．．．．14 第 二章 文獻回顧．．．．．．．．．．．．．．．．．．．．15 2.1氫氣電漿處理文獻．．．．．．．．．．．．．．．
．16 2.2氫氣退火處理文獻．．．．．．．．．．．．．．．．21 第三章 理論與研究方法．．．．．．．．．．．．．
．．．．25 3.1電子場發射理論．．．．．．．．．．．．．．．．．25 3.2奈米線的成長機制．．．．．．．．．．．．
．．．．28 3.2.1 Vapor-Liquid-Solid(VLS)．．．．．．．．．．．29 3.2.2氧化輔助生長(Oxide-Assisted Growth, OAG)．．．31 3.2.3 Vapor-Solid(VS)．．．．．．．．．．．．．．．33 3.2.4 Solution-Liquid-Solid．．．．．．
．．．．．．．34 3.2.5 Solid-Liquid-Solid(SLS)．．．．．．．．．．．．36 3.2.6 Solid-Solid transformation(SS)．
．．．．．．．．38 3.3電漿蝕刻機制．．．．．．．．．．．．．．．．．．39 3.4實驗儀器原理．．．．．．．．．．
．．．．．．．．40 3.4.1熱蒸鍍系統．．．．．．．．．．．．．．．．40 3.4.2高溫爐管系統．．．．．．．
．．．．．．．．41 3.4.3電漿蝕刻系統．．．．．．．．．．．．．．．42 3.4.4掃描式電子顯微鏡系統．．．
．．．．．．．．45 3.4.5能量散佈分析儀系統．．．．．．．．．．．．46 3.4.6 FTIR（霍氏轉換紅外光譜儀）
的分析．．．．．48 3.4.7場發射量測裝置系統．．．．．．．．．．．．49 3.5實驗步驟．．．．．．．．．．．．
．．．．．．．．51 3.5.1蒸鍍．．．．．．．．．．．．．．．．．．．51 3.5.2成長SiOx奈米線．．．．．．
．．．．．．．．52 3.5.3電漿後處理．．．．．．．．．．．．．．．．53 3.5.4電性量測．．．．．．．．．
．．．．．．．．53 第四章 實驗結果與討論．．．．．．．．．．．．．．．．．54 4.1典型SiOx奈米線的研究與討論
．．．．．．．．．．．54 4.1.1掃瞄式電子顯微鏡(SEM)的分析．．．．．．．．54 4.1.2電子場發射分析．．．
．．．．．．．．．．．61 4.2 Ar電漿後處理對SiOx奈米線的的研究與討論．．．．．64 4.2.1掃瞄式電子顯微 鏡(SEM)的分析．．．．．．．．64 4.2.2穿透式電子顯微鏡(TEM)的分析．．．．．．．．68 4.2.3能量散佈分析
儀(EDS)的分析．．．．．．．．．69 4.2.4霍氏轉換紅外光譜儀(FTIR)的分析．．．．．．．71 4.2.5電子場發射 的分析．．．．．．．．．．．．．73 4.3 CF4電漿後處理對SiOx奈米線的研究與討論．．．．．77 4.3.1掃瞄式電子 顯微鏡(SEM)的分析．．．．．．．．77 4.3.2穿透式電子顯微鏡(TEM)的分析．．．．．．．．80 4.3.3能量散佈 分析儀(EDS)的分析．．．．．．．．．81 4.3.4霍氏轉換紅外光譜儀(FTIR)的分析．．．．．．．84 4.3.5電子場 發射的分析．．．．．．．．．．．．．86 4.4不同電漿處理對SiOx奈米線的研究與討論．．．．．．90 4.4.1掃瞄式 電子顯微鏡(SEM)的分析比較．．．．．．90 4.4.2穿透式電子顯微鏡(TEM)的分析比較．．．．．．92 4.4.3能量 散佈分析儀(EDS)的分析比較．．．．．．．93 4.4.4霍氏轉換紅外光譜儀(FTIR)的分析比較．．．．．94 4.4.5電 流密度的分析比較．．．．．．．．．．．．96 第五章 結論．．．．．．．．．．．．．．．．．．．．．．98 參考 文獻．．．．．．．．．．．．．．．．．．．．．．．．101
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