The Synthesis of Carbon Nanotubes on Silicon Nanowires by Thermal Chemical Vapor Deposition
李世凱、李世鴻
E-mail: 9806477@mail.dyu.edu.tw
ABSTRACT
In this work, thermal chemical vapor deposition was utilized to grow carbon nanotubes (CNTs) on Si nanowires. CH4 was the main source for carbon, and argon was used as the carrier gas. CNTs were synthesized from carbon atoms obtained from catalytic thermal decomposition of silane. In this research, we study the effect of catalyst metal thickness and deposition temperature and different catalyst on structural properties and field emission characteristics of carbon nanotubes (CNTs) which were synthesized by thermal chemical vapor deposition of methane.
Raman spectroscopy and SEM、TEM、EDS were employed to study structural properties of CNTs, whereas field-emission characteristics of CNTs were measured in high vacuum. From SEM and Raman spectroscopic studies, it is found that as catalyst nickel thickness gets thicker, the size of nickel balls formed in the nucleation period gets larger. Hence, the number of CNTs gets smaller, and the diameters of synthesized CNTs get larger. It is suspected that the supplied thermal energy at low temperatures is not high enough to activate catalytic reaction to synthesize CNTs. At high temperatures, thermal energy supplied has already cross the threshold for nucleation, and the diameter of CNT reach a saturation value.
From Fowler-Nordheim tunneling analysis, it was found that the increase in nickel thickness indeed increases the work function of CNT. Hence, we arrive at the conclusion that the decrease in the number of CNT, the decrease in the field enhancement factor, and the increase in the work function of CNT are three main factors that causes the decrease in the field emission current for larger nickel metal thickness. It is found that this change in field emission current is caused not only by the change in number and diameter of CNTs, but also by the change in crystalline structure and work function of CNTs. The increase in the work function of CNTs make it difficult for electrons to emit from CNTs which can play an important role in the emission current.
Keywords : carbon nanotubes (CNTs)、field emission、thermal chemical vapor deposition (thermal CVD)、silicon nanowires Table of Contents
封面內頁 簽名頁
授權書．．．．．．．．．．．．．．．．．．．．．．．．．iii 中文摘要．．．．．．．．．．．．．．．．．．．．．．．．iv 英文摘要．．．．．．．．．．．．．．．．．．．．．．．．vi 誌謝．．．．．．．．．．．．．．．．．．．．．．．．．．viii 目錄．．．．．．．．．．．．．．．．．．．．．．．．．．x 圖目錄．．．．．．．．．．．．．．．．．．．．．．．．．xiii 表目錄．．．．．．．．．．．．．．．．．．．．．．．．．xvii
第一章 序論．．．．．．．．．．．．．．．．．．．．．．．1 1.1 奈米碳管的歷史與簡介．．．．．．．．．．．．．．．2 1.2 奈米碳管的結構．．．．．．．．．．．．．．．．．6 1.3 奈米碳管的應用價值．．．．．．．．．．．．．．．．9 第二章 文獻回顧．．．．．．．．．．．．．．．．．．．．12 2.1使用化學氣相沉積讓奈米碳管成長在矽奈米絲上．．．．12 2.2實驗動機．．．．．．．．．．．．．．．．．．．．．14 第三章 理論與研究方法．．．．．．．．．．．．．．．．．15 3.1 電子場發射理論．．．．．．．．．．．．．．．．．．15 3.1.1奈米碳管作為場發射電子源．．．．．．．．．．．．．20 3.1.2 應用在場發射平面顯示器．．．．．．．．．．．．23 3.2 奈米碳管的成長機制．．．．．．．．．．．．．．．．26
3.2.1 奈米碳管主要成長機制．．．．．．．．．．．．26 3.2.2催化劑在奈米碳管成長中扮演的角色．．．．．．27 3.2.3 奈米碳管成長模式分類．．．．．．．．．．．．30 3.3 奈米碳管的製程方法．．．．．．．．．．．．．．．34 3.4 實驗裝置與分析儀器．．．．．．．．．．．．．．．．45 3.4.1 蒸鍍系統 與Thermal-CVD．．．．．．．．．．．45 3.4.2 SEM和EDS及拉曼光譜量測與電性量測．．．．． 49 3.4.3高解析穿透式電子顯微鏡 ．．．．．．．．．．． 56 3.5 實驗方法與步驟．．．．．．．．．．．．．．．．．．57 3.5.1 蒸鍍系統與Thermal-CVD．．．．．．．．．．． 57 3.5.2 電性量測．．．．．．．．．．．．．．．．．．． 60 第四章 實驗結果與討論．．．．．．．．．．．．．．．．．61
4.1矽奈米絲上蒸鍍不同催化劑厚度成長奈米碳管的研究與討論．．．．．．．．．．．．．．．．．．．．．．．．62 4.1.1 SEM(掃瞄式電子顯微鏡)的分析．．．．．．．． 62
4.1.2 EDS(能量散佈分析儀)的分析．．．．．．．．．68 4.1.3 Raman(拉曼光譜)的分析．．．．．．． ．．．．69 4.1.4 電子場發射的分析．．．．．．．．．．．．．．71 4.2在矽奈米絲上改變不同成長溫度成長奈米碳管的研究與討 論．．．．．．．．．．．．．．．．．．．．．．．．76 4.2.1 SEM(掃瞄式電子顯微鏡)的分析．．．．．．．．76 4.2.2 EDS(能量散佈分析儀)的分析．．．．．．．．．85 4.2.3 Raman(拉曼光譜)的分析．．．．．．． ．．．．86 4.2.4 電子場發射的分析．．．．．．．．．．．．．． 88
4.3 在矽奈米絲成長奈米碳管與在平面基材上成長奈米碳管比較．．．．．．．．．．．．．．．．．．．．．．．．92 4.3.1 SEM(掃瞄式電子顯微鏡)的分析．．．．．．．．92
4.3.2 EDS(能量散佈分析儀)的分析．．．．．．．．．． 94 4.3.3 Raman(拉曼光譜)的分析．．．．．．．．．．．95 4.3.4 電子場發射的分析．．．．．．．．．．．．．．96 4.3.5 TEM(穿透式顯微鏡)分析．．．．．．．．．．．97 第五章 結論．．．．．．．．．．．．．．．．．．．．．．98 參考文獻．．．．．．．．．．．．．．．．．．．．．．．．．100 REFERENCES
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