[PDF] Top 20 Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
Has 10000 "Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels" found on our website. Below are the top 20 most common "Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels".
Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
... Polysilicon thin-film transistors 共poly-Si TFTs兲 are widely used to integrate driver circuits for active-matrix liquid-crystal displays due to its high field effect mobility and driving ...as ... See full document
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Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks
... 共LTPS兲 thin film transis- tors 共TFTs兲 have been adopted in flat panel displays, includ- ing active-matrix liquid crystal displays and active-matrix organic light emitting diode ...of ... See full document
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Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications
... years, polycrystalline silicon thin-film transis- tors 共poly-Si TFTs兲 have attracted much attention for active- matrix liquid crystal displays since they can be integrated on display panel as ... See full document
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Investigations of an Independent Double-Gated Polycrystalline Silicon Nanowire Thin Film Transistor for Nonvolatile Memory Operations
... for nonvolatile memory ...programming/erasing gate also acts as the read gate, a dedicated read gate with an oxide-only dielectric is proposed in the new ...larger ... See full document
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Memory characteristics of laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with location-controlled grain boundary perpendicular to the channel
... nm) and an 100-nm-thick in-situ phosphorus-doped poly- silicon layer were formed by ...the gate electrodes, a self-aligned phosphorous implantation with a dose of 5 10 15 cm 2 at 36 keV was ... See full document
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High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
... structure and multiple nanowire channels 共MNCs兲 to solve the problems just described to realize high-performance poly-Si ...TFTs with a gate length of ...structure with W⫽1 m ... See full document
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Nickel Nanocrystals Embedded in Metal-Alumina-Nitride-Oxide-Silicon Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistor for Low-Voltage Nonvolatile Memory Application
... size and a higher dot density may increase the trapping density of the device and give rise to a larger memory ...size and decrease in dot spacing could cause P/E efficiency ...device ... See full document
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Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics
... compared with channel hot electron injection ...SONOS memory still has several issues on performance, such as insufficient programing/erasing 共P/E兲 efficiency and an undesirable gate injection ... See full document
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Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors
... Nonvolatile memory Thin-film transistor (TFT) This study investigates the temperature-dependent memory characteristics of polycrystalline silicon thin- film ... See full document
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Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
... in Memory characteristics of laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with ... See full document
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Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitride
... (NC), nanowire (NW), ...attention and been widely studied because of their potential applications in several ar- eas, such as switches, resonators, memory, and sensor devices ...associated ... See full document
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Low-Temperature Polycrystalline Silicon Thin Film Transistor Nonvolatile Memory Using Ni Nanocrystals as Charge-Trapping Centers Fabricated by Hydrogen Plasma Process
... Science and Engineering, MingDao University, Changhua 52345, Taiwan Received November 30, 2009; accepted January 18, 2010; published online June 21, 2010 Processes for fabricating a Ni nanocrystal (NC)-assisted ... See full document
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Low temperature Ni-nanocrystals-assisted hybrid polycrystalline silicon thin film transistor for non-volatile memory applications
... (LTPS) thin film transistors (TFTs) have been widely studied for applications in driving integrated circuits on glass panels due to their high field effect mobility and driving current [1 –3] ...non-volatile ... See full document
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Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
... a polycrystalline silicon thin-film transistor (poly-Si TFT) combined with a silicon–oxide–nitride–oxide–silicon (SONOS) stack ... See full document
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High-performance polycrystalline silicon thin-film transistors with oxidenitride-oxide gate dielectric and multiple nanowire channels
... TFT with a nanowire structure and multilayer ONO gate ...TFT with ONO gate dielectric has better electrical properties compared to the standard TFT with a TEOS ... See full document
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CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES
... In contrast to conventional TFTs with pure thermal oxides as gates, TFTs with 0/N gate structures can attain a higher ON/OFF current ratio and carrier mobility by reducing the equivalent[r] ... See full document
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Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
... traps, and each trap corresponds to one unique trap ...floating-gate memory, which is a conducting material in which its charges are stored at the conduction ...characteristics and charge loss ... See full document
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Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation
... 3 gate dielectric with a dielectric constant of 35 and a TaN metal ...mobility, and on/off current ratio because of the passivation of trap states in the poly-Si film and at the ... See full document
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High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure
... Kao, and Tan-Fu Lei, Member, IEEE Abstract—In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral- crystallization (MILC) ... See full document
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Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
... region, and the larger HRS of the control sample can be achieved by applying the same stopping voltage, as shown in ...phenomenon, and is related to metal/oxide interfacial quality and ... See full document
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