[PDF] Top 20 Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors

... multilayer Ge–Si quantum-dot structure. Si bandgap is 1:17 eV at 20 K, and the QD barrier is 0:4 ...the infrared exposure, since the similar spectrum was observed for the ... See full document

... The simple metal-insulator-semiconductor (MIS) structure with tunneling insulator can make the GeISi QDIP compatible with Si ULSl process, and make it possible to have conven[r] ... See full document

... 共100兲 Si substrates with the resistivity of 15– 25 ⍀ cm by ultrahigh vacuum chemical va- por deposition ...between Si and Ge, the top SiGe dot with shorter annealing time after formation has a ... See full document

... Fig. 3. Noise current gain of samples A and B as a function of the average electric field at 77 K. FWHM which mainly comes from the size nonuniformity of the QDs in sample A. Although the QDs have three-dimensional ... See full document

... as photodetectors at the inversion ...the quantum dot infrared photodetectors (QDIPs) and quantum well infrared detectors ...the quantum dot and ... See full document

... the infrared respon- sivity peak (6 lm  205 meV) with the transition peaks, the transition could be deduced to be from the ground state to the bound excited state associated with the ... See full document

... increases with the device temperature for two orders of magni- tude. Such temperature dependence is originated mainly from the increase of the current gain due to the increase of repulsive Coulomb potential from increase ... See full document

... QD increases. More obvious tuning behavior is found under positive biases. It is caused by the AlGaAs blocking layer. The 30
A A blocking layer fully covers the small dot while leaves the tip of the large dots ... See full document

... InAs–GaAs Quantum-Dot Infrared Photodetectors Shu-Ting Chou, Member, IEEE, Shih-Yen Lin, Member, IEEE, Chi-Che Tseng, Student Member, IEEE, Yi-Hao Chen, Cheng-Nan Chen, and Meng-Chyi Wu, ... See full document

... Quantum-dot infrared photodetectors 共QDIPs兲 have been widely investigated in recent ...ventional quantum-well infrared photodetectors 共QWIPs兲, advantages such as ... See full document

... InGaAs-Capped Quantum-Dot Infrared Photodetectors Wei-Hsun Lin, Student Member, IEEE, Chi-Che Tseng, Student Member, IEEE, Kuang-Ping Chao, Shu-Cheng Mai, Shih-Yen Lin, Member, IEEE, and ... See full document

... Chi-Che Tseng, Student Member, IEEE, Shu-Ting Chou, Member, IEEE, Yi-Hao Chen, Cheng-Nan Chen, Wei-Hsun Lin, Tung-Hsun Chung, Shih-Yen Lin, Member, IEEE, Pei-Chin Chiu, Jen-Inn Chyi, Senior Member, IEEE, and Meng-Chyi ... See full document

... transform infrared spectrometer and the absolute responsivity was calibrated with 1000 °C blackbody radiation with a Ge wafer to filter out photons with wavelength shorter than 2 ... See full document

... high-temperature operation infrared photodetectors in the LWIR range. In conclusion, a 10-period QD/QW MMIP is proposed in this pa- per. Responses at 4.8/12.7 and 5.3/10.3 l m at positive and negative ... See full document

... the quantum efficiency of sample B is also ...the quantum efficiency, the polarization-dependent photoresponse of our devices was measured using the 45 edge coupling ...higher quantum efficiency is ... See full document

... 10.1063/1.1347006兴 Quantum-well infrared photodetectors 共QWIPs兲 utilizing an intersubband transition have been extensively investigated over the last ...the quantum-well ...the quantum ... See full document

... 共InGa兲As quantum dots 共QDs兲 on GaAs substrates for practical applications and fun- damental research have been widely investigated in recent ...and quantum-dot infrared photodetectors ... See full document

... Regarding to the cavity layer, once the detection wavelength has been assigned, the thickness and materials can be decided accordingly. The reflectivity of the top mirror, how- ever, has to be optimized based on the ... See full document

... InAs–GaAs quantum-dot infrared photodetector (QDIP) with 8-nm In 0 15 Ga 0 85 As capping layer grown after quantum-dot (QD) deposition is ...long-wavelength infrared detections ... See full document

... decade, quantum dot infrared photodetectors 共QDIPs兲 have been widely investigated with different struc- tures and materials because of their potential to become low cost, high temperature ... See full document