第五章 量測結果
5.1 後端考量
CHAPTER 5 Measurement Result
CHAPTER 5 Measurement Result
▲Simulation Corner Case (RFCornerCase=Typical/Typical) High Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=23.1605.250GHz m12 freq=
dB(S(1,2))=-58.2905.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-12.9675.250GHz m14 freq=
dB(S(2,2))=-14.6765.250GHz
2 4 6 8
0 10
-15 -10 -5
-20 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=2.2795.250GHzm16 freq=
NFmin=2.2605.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.9865.250GHzm18 freq=
mu_source=4.1945.275GHz
2 4 6 8
0 10
2 3 4 5
1 6
freq, GHz
meu_sourc
m18
mu_load
m17
圖5.1 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(H) [Typical/Typical]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-16.9675.260GHz m2freq=
dBm(mix(Vout,tones))=-68.7755.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-70 -60 -50 -40 -30 -20
-80 -10
m2Pin=
Pout=-1.340-24.500 m3
Pin=dbm_out=-2.412-24.500 m4
Pin=dB_gain=22.088-24.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out
m3
dB_gain
m4 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.2 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(H) [Typical/Typical]
CHAPTER 5 Measurement Result
Medium Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=17.0175.250GHz m12 freq=
dB(S(1,2))=-57.6525.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-11.6345.250GHz m14 freq=
dB(S(2,2))=-14.2455.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=2.4615.250GHzm16 freq=
NFmin=2.4465.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.9505.250GHzm18 freq=
mu_source=3.7515.275GHz
2 4 6 8
0 10
2 3 4
1 5
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.3 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(M) [Typical/Typical]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-23.0705.260GHz m2freq=
dBm(mix(Vout,tones))=-78.6915.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100 -20
m2Pin=
Pout=-4.483-21.500 m3
Pin=dbm_out=-5.485-21.500 m4
Pin=dB_gain=16.015-21.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
m1
m2
Pout
m2
dbm_out
m3
dB_gain
m4
freq, GHz
dBm(mix(Vout,tones))
圖5.4 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(M) [Typical/Typical]
CHAPTER 5 Measurement Result
Low Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=11.4475.250GHz m12 freq=
dB(S(1,2))=-57.7715.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-11.6495.250GHz m14 freq=
dB(S(2,2))=-13.7145.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=2.8805.250GHzm16 freq=
NFmin=2.8655.250GHz
2 4 6 8
0 10
20 40
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.7475.250GHzm18 freq=
mu_source=3.8215.275GHz
2 4 6 8
0 10
2 3 4
1 5
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.5 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(L) [Typical/Typical]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-28.6105.260GHz m2freq=
dBm(mix(Vout,tones))=-91.0115.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100 -20
m2Pin=
Pout=-3.053-14.500 m3
Pin=dbm_out=-4.120-14.500 m4
Pin=dB_gain=10.380-14.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
m1
m2
Pout
m2
dbm_out
m3
dB_gain
m4
freq, GHz
dBm(mix(Vout,tones))
圖5.6 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(L) [Typical/Typical]
CHAPTER 5 Measurement Result
▲Simulation Corner Case (RFCornerCase=Fast/Fast) High Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=27.2395.250GHz m12 freq=
dB(S(1,2))=-61.9755.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-12.0165.250GHz m14 freq=
dB(S(2,2))=-14.3225.250GHz
2 4 6 8
0 10
-15 -10 -5
-20 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=1.8535.250GHzm16 freq=
NFmin=1.8465.250GHz
2 4 6 8
0 10
10 20 30 40
0 50
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.7015.250GHzm18 freq=
mu_source=3.7035.275GHz
2 4 6 8
0 10
2 4 6
0 8
freq, GHz
u_sourcme
m18
mu_load m17
圖5.7 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(H) [Fast/Fast]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-12.9735.260GHz m2freq=
dBm(mix(Vout,tones))=-58.7585.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-60 -50 -40 -30 -20
-70 -10
m2Pin=
Pout=-0.261-27.500 m3
Pin=dbm_out=-1.406-27.500 m4
Pin=dB_gain=26.094-27.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out
m3
dB_gain
m4 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.8 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(H) [Fast/Fast]
CHAPTER 5 Measurement Result
Medium Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=20.3865.250GHz m12 freq=
dB(S(1,2))=-61.5225.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-9.7135.250GHz m14 freq=
dB(S(2,2))=-14.0895.250GHz
2 4 6 8
0 10
-15 -10 -5
-20 0
freq, GHz
dB(S(1,1)) m13
dB(S(2,2))
m14
m15freq=
nf(2)=1.9625.250GHzm16 freq=
NFmin=1.9575.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.8285.250GHzm18 freq=
mu_source=3.0095.275GHz
2 4 6 8
0 10
2 3 4 5
1 6
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.9 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(M) [Fast/Fast]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-19.7935.260GHz m2freq=
dBm(mix(Vout,tones))=-64.8605.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-60 -50 -40 -30 -20
-70 -10
m2Pin=
Pout=-5.614-26.000 m3
Pin=dbm_out=-6.647-26.000 m4
Pin=dB_gain=19.353-26.000
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out
m3
dB_gain
m4 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.10 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(M) [Fast/Fast]
CHAPTER 5 Measurement Result
Low Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=14.0125.250GHz m12 freq=
dB(S(1,2))=-61.3955.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-9.2435.250GHz m14 freq=
dB(S(2,2))=-13.7965.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=2.2525.250GHzm16 freq=
NFmin=2.2445.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.7745.250GHzm18 freq=
mu_source=2.8995.275GHz
2 4 6 8
0 10
2 3 4
1 5
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.11 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(L) [Fast/Fast]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-26.0365.260GHz m2freq=
dBm(mix(Vout,tones))=-89.2295.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100 -20
m2Pin=
Pout=-0.988-15.000 m3
Pin=dbm_out=-2.070-15.000 m4
Pin=dB_gain=12.930-15.000
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
m1
m2
Pout
m2
dbm_out
m3
dB_gain
m4
freq, GHz
dBm(mix(Vout,tones))
圖5.12 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(L) [Fast/Fast]
CHAPTER 5 Measurement Result
▲Simulation Corner Case (RFCornerCase=Slow/Slow) High Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=19.3465.250GHz m12 freq=
dB(S(1,2))=-55.5355.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-14.4815.250GHz m14 freq=
dB(S(2,2))=-14.0975.250GHz
2 4 6 8
0 10
-15 -10 -5
-20 0
freq, GHz
dB(S(1,1))
dB(S(2,2)) m13
m14
m15freq=
nf(2)=2.7855.250GHzm16 freq=
NFmin=2.7515.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.7475.250GHzm18 freq=
mu_source=5.0115.275GHz
2 4 6 8
0 10
2 3 4 5
1 6
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.13 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(H) [Slow/Slow]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-20.7525.260GHz m2freq=
dBm(mix(Vout,tones))=-76.2435.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100 -20
m2Pin=
Pout=-3.154-22.500 m3
Pin=dbm_out=-4.165-22.500 m4
Pin=dB_gain=18.335-22.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
m1
Pout m2
m2
dbm_out
m3
dB_gain
m4
freq, GHz
dBm(mix(Vout,tones))
圖5.14 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(H) [Slow/Slow]
CHAPTER 5 Measurement Result
Medium Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=13.3955.250GHz m12 freq=
dB(S(1,2))=-55.0995.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-13.5275.250GHz m14 freq=
dB(S(2,2))=-13.3895.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=3.1005.250GHzm16 freq=
NFmin=3.0705.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.5265.250GHzm18 freq=
mu_source=4.6615.275GHz
2 4 6 8
0 10
2 3 4
1 5
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.15 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(M) [Slow/Slow]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-26.6755.260GHz m2freq=
dBm(mix(Vout,tones))=-90.0455.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100 -20
m2Pin=
Pout=-4.105-17.500 m3
Pin=dbm_out=-5.194-17.500 m4
Pin=dB_gain=12.306-17.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
m1
m2
Pout
m2
dbm_out
m3
dB_gain
m4
freq, GHz
dBm(mix(Vout,tones))
圖5.16 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(M) [Slow/Slow]
CHAPTER 5 Measurement Result
Low Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=8.3875.250GHz m12 freq=
dB(S(1,2))=-55.3825.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-13.7895.250GHz m14 freq=
dB(S(2,2))=-12.9005.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=3.7265.250GHzm16 freq=
NFmin=3.6975.250GHz
2 4 6 8
0 10
20 40 60
0 80
freq, GHz
nf(2)
m15
NFmin
m16
m17freq=
mu_load=4.3415.250GHzm18 freq=
mu_source=4.8765.275GHz
2 4 6 8
0 10
2 3 4 5
1 6
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.17 可變增益低雜訊放大器 S 參數、雜訊指數與穩定度之模擬圖(L) [Slow/Slow]
[IP1dB、IMD]
m1freq=
dBm(mix(Vout,tones))=-31.6725.260GHz m2freq=
dBm(mix(Vout,tones))=-101.4565.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-100 -80 -60 -40
-120 -20
m2Pin=
Pout=-4.613-13.000 m3
Pin=dbm_out=-5.677-13.000 m4
Pin=dB_gain=7.323-13.000
-80 -60 -40 -20 0
-100 20
-80 -60 -40 -20 0
-100 20
Pin
Pout
m2
dbm_out
m3
dB_gain
m4 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.18 可變增益低雜訊放大器 IP1dB 與 IMD 模擬圖(L) [Slow/Slow]
CHAPTER 5 Measurement Result
將上述圖表作一整理，並列舉其如下：
Simulation corner-case=TT
Simulation corner-case=FF
Simulation corner-case=SS Frequency Range 5.15~5.825GHz 5.15~5.825GHz 5.15~5.825GHz
Process TSMC CMOS 0.18um TSMC CMOS 0.18um TSMC CMOS 0.18um
Vdd(V) 1.8 1.8 1.8
Gain Mode High Medium Low High Medium Low High Medium Low S11 -12.97 -11.63 -11.65 -12.02 -9.71 -9.24 -14.48 -13.53 -13.79 S22 -14.68 -14.25 -13.71 -14.32 -14.09 -13.8 -14.1 -13.39 -12.9 S21 23.16 17.02 11.45 27.24 20.39 14.01 19.35 13.4 8.39 S12 -68.29 -57.65 -57.77 -61.98 -61.52 -61.4 -55.54 -55.1 -55.38 Noise Figure 2.279 2.461 2.88 1.853 1.962 2.25 2.785 3.1 3.726 IP1dB(dBm) -24.5 -21.5 -14.5 -27.5 -26 -15 -22.5 -17.5 -13
IIP3(dBm) -14.223 -12.28 -8.86 -17.32 -17.65 -8.45 -12.36 -8.39 -5.17 表5.1 製程偏移量比較表
由上表可得知，幾項考慮甚乎的參數，諸如：增益(gain)當製程偏移速 度較快時，是提高的，當製程偏移速度較慢時，反之；雜訊指數(Noise Factor) 當製程偏移速度較快時，它是減少的，當製程偏移速度較慢時，反之；而 IP1dB(dBm)與 IIP3(dBm)主要是觀察電路的線性度(Linearity)，當製程偏移 速度較快時，線性度是較差的，當製程偏移速度較慢時，反之。
5.1.2 溫度偏移考量
溫度對電路的影響也是非常重要的，它有可能會造成此電路性能緩慢 或急遽的作變化，因此在進行電路設計時也必須同時針對溫度此一部分所 產生的電路變化進行模擬。
每一顆不同的晶片(IC)當我們在使用時，一定都會先閱讀它的資料手 冊(Data Sheet)，來決定該如何去將其作應用；而每一顆晶片在Data Sheet 內一定會對其額定溫度(Temperature rating)作敘述，而每間公司甚至不同的 國家其額定溫度也都不盡相同，不過一般軍用其額定溫度都為-400~+800； 此電路在模擬時，其模擬環境的溫度是設定在16.850C，因此接下來將考 量溫度與下降所造成的影響，並針對幾種不同的溫度作一模擬：
CHAPTER 5 Measurement Result
▲Temperature= 00C High Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=23.2535.250GHz m12 freq=
dB(S(1,2))=-58.6345.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-12.9655.250GHz m14 freq=
dB(S(2,2))=-14.5475.250GHz
2 4 6 8
0 10
-15 -10 -5
-20 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=2.1645.250GHz m16 freq=
NFmin=2.1475.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m18freq=
mu_source=4.1955.275GHz m17freq=
mu_load=4.9205.250GHz
2 4 6 8
0 10
2 3 4 5
1 6
freq, GHz
u_sourcme m18
mu_load
m17
圖5.19 可變增益低雜訊放大器S參數、雜訊指數與穩定度之模擬圖(H) [00C]
[IP1dB、IMD]
m2Pin=
Pout=-1.247-24.500 m3
Pin=dbm_out=-2.321-24.500 m4
Pin=dB_gain=22.179-24.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out
m3
dB_gain
m4
m1freq=
dBm(mix(Vout,tones))=-16.8775.260GHz m2freq=
dBm(mix(Vout,tones))=-68.5175.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-70 -60 -50 -40 -30 -20
-80
-10 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.20 可變增益低雜訊放大器IP1dB與IMD模擬圖(L) [00C]
CHAPTER 5 Measurement Result
Medium Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=17.4695.250GHz m12 freq=
dB(S(1,2))=-57.9645.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-11.6015.250GHz m14 freq=
dB(S(2,2))=-14.2575.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
dB(S(2,2)) m13
m14
m15freq=
nf(2)=2.3285.250GHzm16 freq=
NFmin=2.3135.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m18freq=
mu_source=3.7345.275GHz m17freq=
mu_load=4.9495.250GHz
2 4 6 8
0 10
2 3 4 5
1 6
freq, GHz
u_sourcme m18
mu_load
m17
圖5.21 可變增益低雜訊放大器S參數、雜訊指數與穩定度之模擬圖(M) [00C]
[IP1dB、IMD]
m2Pin=
Pout=-3.531-21.000 m3
Pin=dbm_out=-4.621-21.000 m4
Pin=dB_gain=16.379-21.000
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out m3
dB_gain
m4
m1freq=
dBm(mix(Vout,tones))=-22.6155.260GHz m2freq=
dBm(mix(Vout,tones))=-79.3095.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100
-20 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.22 可變增益低雜訊放大器IP1dB與IMD模擬圖(M) [00C]
CHAPTER 5 Measurement Result
Low Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=11.8785.250GHz m12 freq=
dB(S(1,2))=-58.1265.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-11.6065.250GHz m14 freq=
dB(S(2,2))=-13.7125.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
dB(S(2,2)) m13
m14
m15freq=
nf(2)=2.7145.250GHzm16 freq=
NFmin=2.6995.250GHz
2 4 6 8
0 10
20 40
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m18freq=
mu_source=3.8025.275GHz m17freq=
mu_load=4.7445.250GHz
2 4 6 8
0 10
2 3 4
1 5
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.23 可變增益低雜訊放大器S參數、雜訊指數與穩定度之模擬圖(L) [00C]
[IP1dB、IMD]
m2Pin=
Pout=-3.122-15.000 m3
Pin=dbm_out=-4.196-15.000 m4
Pin=dB_gain=10.804-15.000
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out m3
dB_gain
m4
m1freq=
dBm(mix(Vout,tones))=-28.185.260GHz m2freq=
dBm(mix(Vout,tones))=-91.7025.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100
-20 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.24 可變增益低雜訊放大器IP1dB與IMD模擬圖(L) [00C]
CHAPTER 5 Measurement Result
▲Temperature= 300C High Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=23.0485.250GHz m12 freq=
dB(S(1,2))=-58.0265.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-12.9885.250GHz m14 freq=
dB(S(2,2))=-14.7325.250GHz
2 4 6 8
0 10
-15 -10 -5
-20 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=2.3705.250GHz m16 freq=
NFmin=2.3505.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m18freq=
mu_source=4.2035.275GHz m17freq=
mu_load=5.0175.250GHz
2 4 6 8
0 10
2 3 4 5
1 6
freq, GHz
u_sourcme m18
mu_load
m17
圖5.25 可變增益低雜訊放大器S參數、雜訊指數與穩定度之模擬圖(H) [300C]
[IP1dB、IMD]
m2Pin=
Pout=-1.452-24.500 m3
Pin=dbm_out=-2.526-24.500 m4
Pin=dB_gain=21.974-24.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out
m3
dB_gain
m4
m1freq=
dBm(mix(Vout,tones))=-17.0785.260GHz m2freq=
dBm(mix(Vout,tones))=-68.9355.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-70 -60 -50 -40 -30 -20
-80
-10 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.26 可變增益低雜訊放大器IP1dB與IMD模擬圖(H) [300C]
CHAPTER 5 Measurement Result
Medium Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=16.6065.250GHz m12 freq=
dB(S(1,2))=-57.4255.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-11.6825.250GHz m14 freq=
dB(S(2,2))=-14.1945.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=2.5705.250GHzm16 freq=
NFmin=2.5545.250GHz
2 4 6 8
0 10
10 20 30 40 50
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m18freq=
mu_source=3.7765.275GHz m17freq=
mu_load=4.9295.250GHz
2 4 6 8
0 10
2 3 4
1 5
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.27 可變增益低雜訊放大器S參數、雜訊指數與穩定度之模擬圖(M) [300C]
[IP1dB、IMD]
m2Pin=
Pout=-4.894-21.500 m3
Pin=dbm_out=-5.909-21.500 m4
Pin=dB_gain=15.591-21.500
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out m3
dB_gain
m4
m1freq=
dBm(mix(Vout,tones))=-23.4825.260GHz m2freq=
dBm(mix(Vout,tones))=-78.2045.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100
-20 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.28 可變增益低雜訊放大器IP1dB與IMD模擬圖(M) [300C]
CHAPTER 5 Measurement Result
Low Gain Mode:
[S-parameter、Noise Figure、Stability]
m11freq=
dB(S(2,1))=11.0815.250GHz m12 freq=
dB(S(1,2))=-57.4985.250GHz
2 4 6 8
0 10
-200 -100 0
-300 100
freq, GHz
dB(S(2,1))
m11
dB(S(1,2)) m12
m13freq=
dB(S(1,1))=-11.6925.250GHz m14 freq=
dB(S(2,2))=-13.6885.250GHz
2 4 6 8
0 10
-10 -5
-15 0
freq, GHz
dB(S(1,1))
m13
dB(S(2,2))
m14
m15freq=
nf(2)=3.0155.250GHzm16 freq=
NFmin=2.9995.250GHz
2 4 6 8
0 10
20 40
0 60
freq, GHz
nf(2)
m15
NFmin
m16
m18freq=
mu_source=3.8415.275GHz m17freq=
mu_load=4.7355.250GHz
2 4 6 8
0 10
2 3 4
1 5
freq, GHz
u_sourcme
m18
mu_load
m17
圖5.29 可變增益低雜訊放大器S參數、雜訊指數與穩定度之模擬圖(L) [300C]
[IP1dB、IMD]
m2Pin=
Pout=-2.919-14.000 m3
Pin=dbm_out=-3.988-14.000 m4
Pin=dB_gain=10.012-14.000
-80 -60 -40 -20 0
-100 20
-60 -40 -20 0 20
-80 40
Pin
Pout
m2
dbm_out m3
dB_gain
m4
m1freq=
dBm(mix(Vout,tones))=-28.9735.260GHz m2freq=
dBm(mix(Vout,tones))=-91.8065.280GHz
5.23 5.24 5.25 5.26 5.27
5.22 5.28
-80 -60 -40
-100
-20 m1
m2
freq, GHz
dBm(mix(Vout,tones))
圖5.30 可變增益低雜訊放大器IP1dB與IMD模擬圖(L) [300C]
CHAPTER 5 Measurement Result
將上述圖表作一整理，並列舉其如下：
Temperature= 16.850C Temperature= 00C Temperature= 250C Frequency Range 5.15~5.825GHz 5.15~5.825GHz 5.15~5.825GHz
Process TSMC CMOS 0.18um TSMC CMOS 0.18um TSMC CMOS 0.18um
Vdd(V) 1.8 1.8 1.8
Gain Mode High Medium Low High Medium Low High Medium Low S11 -12.97 -11.63 -11.65 -12.97 -11.6 -11.61 -12.99 -11.68 -11.69 S22 -14.68 -14.25 -13.71 -14.55 -14.26 -13.71 -14.73 -14.19 -13.69 S21 23.16 17.02 11.45 23.25 17.47 11.88 23.05 16.61 11.08 S12 -68.29 -57.65 -57.77 -58.63 -57.96 -58.13 -58.03 -57.43 -57.5 Noise Figure 2.279 2.461 2.88 2.164 2.328 2.714 2.37 2.57 3.015 IP1dB(dBm) -24.5 -21.5 -14.5 -24.5 -21 -15 -24.5 -21.5 -14
IIP3(dBm) -14.223 -12.28 -8.86 -14.295 -11.735 -8.3 -14.2 -12.73 -8.635 表5.2 溫度偏移量比較圖
由以上之圖表觀察，可知當溫度降低時，有比較好的增益和較低的雜 訊指數但IP1dB 會降低；而當溫度增加時則反之。
5.1.3 佈局寄生效應考量
在此章節中，主要針對佈局所產生的寄生效應作一考量，使用的軟體 為DRACULA 並利用 TSMC 所提供的 LPE command 對電路進行驗證，下 圖5.31 所示為其示意圖(由於 Extraction 出的結果檔案內容過於冗長，因此 在此僅附上加入模擬後的完整電路圖)：
gnd1gnd1 gnd1 gnd1 gnd1
V4 V1
V3
V7 V5 V2
gnd1 gnd1 gnd1
Vdd1
V6
Vdd2
gnd1
gnd1
Vdd1 Vdd2
Vdd2
gnd1
C C93 C=0. 155106 pF C C103 C=1. 28445 pF
C C90 C=0. 124083 pF
C C91 C=0. 0581700 pF C C88 C=0. 152132 pF
C C83 C=0. 241450 pF C C87 C=0. 361202 pF C C89 C=0. 0367445 pF
C C86 C=0. 273737 pF C
C85 C=0. 0345440 pF
C C84 C=0. 264006 pF
C C80 C=0. 167196 pF C
C82 C=0. 131990 pF C C77 C=0. 0881960 pF
C C79 C=0. 0643418 pF
C C78 C=0. 0827882 pF C C94 C=0. 0814472 pF C C92
C=0. 150615 pF R
R55 R=625 O hm C C53 C=0. 065 pF
R R54 R=0. 25 O hm L L25 R=
L=0. 8 nH TSM C_CM 018RF_M I M CAP
C59 Cs=0. 95098 pF lt =29. 403 um TSM C_CM 018RF_M I M CAP C58 Cs=0. 95098 pF lt =29. 403 um C C52 C=0. 065 pF
R R53 R=625 O hm L L24 R=
L=0. 8 nH R R52R=0. 25 O hm
C C102 C=0. 405301 pF
C C81 C=0. 120495 pF
V_DC SRC8 Vdc=1. 8 V L L23 R=
L=1. 2 nH R R50 R=0. 375 O hm C C101 C=0. 065 pF
R R99 R=625 O hm V_DCSRC7
Vdc=1. 8 V R
R35 R=625 O hm C C19 C=0. 065 pF L L19 R=
L=1. 2 nH R R43 R=0. 375 O hm DisplayTem plat e
dispt em p2
" Cir cles_St abilit y"
" Cir cles_G a_NF"
T e mpD is p M easEqn
M eas16 y = yopt ( Sopt , 50) E q n Me a s
M easEqn M eas12 G am m a_Sour ce=Sopt E q n
Me a s M easEqn
M eas14 G am m a_Load=conj( G am m a_O ut ) E q n Me a s
M easEqn M eas11
G am m a_O ut =S22+[ ( S12*S21*G am m a_Sour ce) / ( 1- S11* G am m a_Sour ce) ] E q n
Me a s
M easEqn M eas13 G am m a_I N=S11+[ ( S12*S21*G am m a_Load) / ( 1- S22*G am m a_Load) ] E q n
Me a s St abFact
St abFact 1 K=st ab_f act ( S) St abFact
St abM eas St abM eas1 B=st ab_m eas( S) St abM eas
Sm G am m a1 Sm G am m a1 G am m a_M S=sm _gam m a1( S) SmGamma1
N Sm G am m a2 Sm G am m a2 G am m a_M L=sm _gam m a2( S) SmGamma2
N O pt ions
O pt ions1
M axWar nings=10 G iveAllWar nings=yes I _AbsTol=1e- 12 A I _RelTol=1e- 6 V_AbsTol=1e- 6 V V_RelTol=1e- 6 TopologyCheck=yes Tnom =25 Tem p=16. 85 OPTIONS S_Par am SP1
Fr eq=
St ep=25 M Hz St op=10 G Hz St ar t =0. 1 G Hz
S-PARAM ETERS
TSM C_CM 018RF_PRO CESS TSM C_CM 018RF_PRO CESS
Resist ance=Wor st RFCor ner Case=TT BI PCor ner Case=TT Cor ner Case=TT
Si - Subst r at e TSM C RF CM OS 0.18um
R R98 R=625 O hm C C100 C=0. 065 pF C C95 C=0. 065 pF
R R93 R=625 O hm C C96 C=0. 065 pF
R R94 R=625 O hm R R95 R=625 O hm C C97 C=0. 065 pF C C98 C=0. 065 pF
R R96 R=625 O hm R R97 R=625 O hm C C99 C=0. 065 pF C C74 C=0. 065 pF
R R85 R=625 O hm C C73 C=0. 065 pF
R R84 R=625 O hm R R83 R=625 O hm C C72 C=0. 065 pF C C75 C=0. 065 pF
R R86 R=625 O hm RR92 R=0. 375 O hm
L L43 R=
L=1. 2 nH L L42 R=
L=1. 2 nH R R91 R=0. 375 O hm R R90 R=0. 375 O hm
L L41 R=
L=1. 2 nH L L33 R=
L=1. 2 nH R R77 R=0. 375 O hm R R78 R=0. 375 O hm
L L34 R=
L=1. 2 nH R R79 R=0. 375 O hm
L L35 R=
L=1. 2 nH R R88 R=0. 375 O hm
L L39 R=
L=1. 2 nH L L38 R=
L=1. 2 nH R R82 R=0. 375 O hm R R81 R=0. 375 O hm
L L37 R=
L=1. 2 nH R R80 R=0. 375 O hm
L L36 R=
L=1. 2 nH L L40 R=
L=1. 2 nH R R89 R=0. 375 O hm
R R87 R=625 O hm C C76 C=0. 065 pF
TSM C_CM 018RF_NM O S_RF M 29
nr =20 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well R
R72 R=0. 5 O hm L L32 R=
L=1. 6 nH R
R60 R=0. 5 O hm L L27 R=
L=1. 6 nH TSM C_CM 018RF_M I M CAP C60 Cs=0. 158 pF lt =12 um
V_DC SRC12 Vdc=1. 8 V R R47 R=0. 375 O hm TSM C_CM 018RF_SPI RAL_TURN
L29 Ls=3. 799 nH nr =3. 5
C C47 C=0. 065 pF
R R51 R=625 O hm
TSM C_CM 018RF_RES R68
R=143. 34 O hm l=40 um w=2 um Type=N+ Poly w/ i silicide ( w>=2. 0) ( RF)
TSM C_CM 018RF_NM O S_RF M 30
nr =20 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well TSM C_CM 018RF_SPI RAL_TURN
L26 Ls=2. 369 nH nr =2. 5
TSM C_CM 018RF_M I M CAP C57 Cs=0. 95 pF lt =29. 388 um
TSM C_CM 018RF_M I M CAP C56 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP
C31 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C30 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C28 Cs=0. 95 pF lt =29. 388 um
TSM C_CM 018RF_M I M CAP C29 Cs=0. 95 pF lt =29. 388 um
Ter m Ter m 1 Z=50 O hm Num =1
TSM C_CM 018RF_M I M CAP C51 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C48 Cs=0. 95 pF lt =29. 388 um
TSM C_CM 018RF_M I M CAP C50 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C49 Cs=0. 95 pF lt =29. 388 um
TSM C_CM 018RF_NM O S_RF M 37
nr =20 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well
Ter m Ter m 2 Z=50 O hm Num =2 L
L21 R=
L=1. 2 nH R
R70 R=0. 375 O hm
L L31 R=
L=1. 2 nH
R R69 R=625 O hm C C64 C=0. 065 pF TSM C_CM 018RF_M I M CAP
C66 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C65 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C63 Cs=0. 95 pF lt =29. 388 um
TSM C_CM 018RF_M I M CAP C62 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_RES R66
R=114. 67 O hm l=32 um w=2 um Type=N+ Poly w/ i silicide ( w>=2. 0) ( RF)
TSM C_CM 018RF_NM O S_RF M 33
nr =30 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well TSM C_CM 018RF_RES
R65
R=143. 34 O hm l=40 um w=2 um Type=N+ Poly w/ i silicide ( w>=2. 0) ( RF) TSM C_CM 018RF_RES R64
R=143. 34 O hm l=40 um w=2 um Type=N+ Poly w/ i silicide ( w>=2. 0) ( RF)
R R44 R=0. 375 O hm
L L20 R=
L=1. 2 nH TSM C_CM 018RF_NM O S_RF
M 34
nr =16 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well TSM C_CM 018RF_M I M CAP C35 Cs=0. 99 pF lt =30 um
TSM C_CM 018RF_M I M CAP C33 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C36 Cs=0. 95 pF lt =29. 388 um
TSM C_CM 018RF_M I M CAP C34 Cs=0. 95 pF lt =29. 388 um C C32 C=0. 065 pF
R R45 R=625 O hm
R R73 R=625 O hm C C68 C=0. 065 pF
TSM C_CM 018RF_NM O S_RF M 31
nr =120 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well TSM C_CM 018RF_RES
R58
R=20 kO hm l=35. 87 um w=2 um Type=HRI P- Poly w/ o silicide
TSM C_CM 018RF_NM O S_RF M 36
nr =64 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well TSM C_CM 018RF_NM O S_RF M 35
nr =42 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well
C C67 C=0. 065 pF
RR71 R=625 O hm TSM C_CM 018RF_RES R59
R=10 kO hm l=18. 103 um w=2 um Type=HRI P- Poly w/ o silicide
TSM C_CM 018RF_M I M CAP C61 Cs=0. 9516 pF lt =29. 412 um
TSM C_CM 018RF_RES R63
R=10 kO hm l=18. 103 um w=2 um Type=HRI P- Poly w/ o silicide TSM C_CM 018RF_RES R62
R=20 kO hm l=35. 87 um w=2 um Type=HRI P- Poly w/ o silicide
TSM C_CM 018RF_SPI RAL_TURN L30 Ls=2. 369 nH nr =2. 5
RR46 R=625 O hm C C39 C=0. 065 pF TSM C_CM 018RF_M I M CAP
C41 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C40 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_M I M CAP C38 Cs=0. 95 pF lt =29. 388 um
TSM C_CM 018RF_M I M CAP C37 Cs=0. 95 pF lt =29. 388 um TSM C_CM 018RF_RES R67
R=75 O hm l=20. 929 um w=2 um Type=N+ Poly w/ i silicide ( w>=2. 0) ( RF)
TSM C_CM 018RF_NM O S_RF M 32
nr =120 wr =2. 5 um lr =0. 18 um Type=1. 8V t r iple- well
CHAPTER 5 Measurement Result
圖5.31 完整可變增益低雜訊放大器電路架構