Bondwire

R

R_bondwire R=0.625 Ohm L

L_bondwire R=

L=2 nH

CHAPTER 4 The Design and Implementation of the Variable Gain Low Noise Amplifier

註.2 為了確定電壓增益，在不同增益模式時，彼此之間都能夠約差 6dB，

因此在主電路的第二級接上一個50Ω的 termination，灌一個信號，

然後觀察其彼此之間是否真的都能夠有一定差距的增益，其三個不 同增益模式時的輸入阻抗與增益圖茲如下：

High Gain Mode:

V7

V5

Vout V6

V_DC SRC5 Vdc=1.8 V

Term Term1 Z=50 Ohm Num=1

Term Term2 Z=50 Ohm Num=2 TSMC_CM018RF_MIMCAP C9 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C10 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C65 Cs=0.95 pF lt=29.388 um TSMC_CM018RF_MIMCAP C66 Cs=0.95 pF lt=29.388 um TSMC_CM018RF_MIMCAP C67 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C68 Cs=0.95 pF lt=29.388 um

V_DC SRC11 Vdc=1.8 V

TSMC_CM018RF_NMOS_RF M24

nr=16 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_NMOS_RF M21

nr=30 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_RES R43

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF)

TSMC_CM018RF_NMOS_RF M25

nr=20 wr=2.5 um lr=0.18 um Type=1.8V triple-well TSMC_CM018RF_NMOS_RF M26

nr=20 wr=2.5 um lr=0.18 um Type=1.8V triple-well V_DC SRC8 Vdc=1.8 V TSMC_CM018RF_RES R13

R=75 Ohm l=20.929 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES

R11

R=114.67 Ohm l=32 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES R15

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES R12

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF)

TSMC_CM018RF_NMOS_RF M22

nr=120 wr=2.5 um lr=0.18 um Type=1.8V triple-well TSMC_CM018RF_NMOS_RF

M20

nr=16 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_SPIRAL_TURN L18 Ls=2.369 nH nr=2.5

m1freq=

dB(S(2,1))=6.5205.250GHz

2 4 6 8

0 10

-40 -20 0

-60

20 m1

freq, GHz

dB(S(2,1))

m2 freq=

mag(Z(1,1))=192.8665.250GHz

2 4 6 8

0 10

50 100 150 200

0 250

freq, GHz

mag(Z(1,1))

m2

m3freq=

imag(Z(1,1))=93.4235.250GHz

2 4 6 8

0 10

-100 -50 0 50 100

-150 150

freq, GHz

imag(Z(1,1))

m3

m6 freq=

real(Y(1,1))=0.0045.250GHz

2 4 6 8

0 10

0.01 0.02 0.03 0.04

0.00 0.05

freq, GHz

real(Y(1,1))

m6

m7 freq=

imag(Y(1,1))=0.0025.250GHz

2 4 6 8

0 10

-0.02 0.00 0.02

-0.04 0.04

freq, GHz

imag(Y(1,1))

m7

CHAPTER 4 The Design and Implementation of the Variable Gain Low Noise Amplifier

Medium Gain Mode:

V7

V5

Vout V6

V_DC SRC5 Vdc=1.8 V

Term Term1 Z=50 Ohm Num=1

Term Term2 Z=50 Ohm Num=2 TSMC_CM018RF_MIMCAP C9 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C10 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C65 Cs=0.95 pF lt=29.388 um TSMC_CM018RF_MIMCAP C66 Cs=0.95 pF lt=29.388 um TSMC_CM018RF_MIMCAP C67 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C68 Cs=0.95 pF lt=29.388 um

V_DC SRC11 Vdc=1.8 V

TSMC_CM018RF_NMOS_RF M24

nr=16 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_NMOS_RF M21

nr=30 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_RES R43

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF)

TSMC_CM018RF_NMOS_RF M25

nr=20 wr=2.5 um lr=0.18 um Type=1.8V triple-well TSMC_CM018RF_NMOS_RF M26

nr=20 wr=2.5 um lr=0.18 um Type=1.8V triple-well V_DC SRC8 Vdc=1.8 V TSMC_CM018RF_RES R13

R=75 Ohm l=20.929 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES

R11

R=114.67 Ohm l=32 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES R15

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES R12

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF)

TSMC_CM018RF_NMOS_RF M22

nr=120 wr=2.5 um lr=0.18 um Type=1.8V triple-well TSMC_CM018RF_NMOS_RF

M20

nr=16 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_SPIRAL_TURN L18 Ls=2.369 nH nr=2.5

m1freq=

dB(S(2,1))=0.0015.250GHz

2 4 6 8

0 10

-40 -20 0

-60 20

m1

freq, GHz

dB(S(2,1))

m2freq=

mag(Z(1,1))=98.1825.250GHz

2 4 6 8

0 10

40 60 80 100

20 120

freq, GHz

mag(Z(1,1))

m2

m3freq=

imag(Z(1,1))=-66.8245.250GHz

2 4 6 8

0 10

-60 -40 -20 0

-80 20

freq, GHz

imag(Z(1,1))

m3

m6freq=

real(Y(1,1))=0.0075.250GHz

2 4 6 8

0 10

0.010 0.015 0.020

0.005 0.025

freq, GHz

real(Y(1,1))

m6

m7freq=

imag(Y(1,1))=0.0095.250GHz

2 4 6 8

0 10

0.00 0.01 0.02 0.03

-0.01 0.04

freq, GHz

imag(Y(1,1))

m7

CHAPTER 4 The Design and Implementation of the Variable Gain Low Noise Amplifier

Low Gain Mode:

V7

V5

Vout V6

V_DC SRC5 Vdc=1.8 V

Term Term1 Z=50 Ohm Num=1

Term Term2 Z=50 Ohm Num=2 TSMC_CM018RF_MIMCAP C9 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C10 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C65 Cs=0.95 pF lt=29.388 um TSMC_CM018RF_MIMCAP C66 Cs=0.95 pF lt=29.388 um TSMC_CM018RF_MIMCAP C67 Cs=0.95 pF lt=29.388 um

TSMC_CM018RF_MIMCAP C68 Cs=0.95 pF lt=29.388 um

V_DC SRC11 Vdc=1.8 V

TSMC_CM018RF_NMOS_RF M24

nr=16 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_NMOS_RF M21

nr=30 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_RES R43

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF)

TSMC_CM018RF_NMOS_RF M25

nr=20 wr=2.5 um lr=0.18 um Type=1.8V triple-well TSMC_CM018RF_NMOS_RF M26

nr=20 wr=2.5 um lr=0.18 um Type=1.8V triple-well V_DC SRC8 Vdc=1.8 V TSMC_CM018RF_RES R13

R=75 Ohm l=20.929 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES

R11

R=114.67 Ohm l=32 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES R15

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF) TSMC_CM018RF_RES R12

R=143.34 Ohm l=40 um w=2 um Type=N+ Poly w/i silicide (w>=2.0) (RF)

TSMC_CM018RF_NMOS_RF M22

nr=120 wr=2.5 um lr=0.18 um Type=1.8V triple-well TSMC_CM018RF_NMOS_RF

M20

nr=16 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_SPIRAL_TURN L18 Ls=2.369 nH nr=2.5

m1freq=

dB(S(2,1))=-2.9665.250GHz

2 4 6 8

0 10

-60 -40 -20

-80

0 m1

freq, GHz

dB(S(2,1))

m2freq=

mag(Z(1,1))=73.3945.250GHz

2 4 6 8

0 10

40 60 80 100 120

20 140

freq, GHz

mag(Z(1,1))

m2

m3freq=

imag(Z(1,1))=-51.7035.250GHz

2 4 6 8

0 10

-50 -40 -30 -20

-60 -10

freq, GHz

imag(Z(1,1))

m3

m6freq=

real(Y(1,1))=0.0085.250GHz

2 4 6 8

0 10

0.008 0.010 0.012 0.014 0.016 0.018

0.006 0.020

freq, GHz

real(Y(1,1))

m6

m7freq=

imag(Y(1,1))=0.0115.250GHz

2 4 6 8

0 10

0.01 0.02 0.03

0.00 0.04

freq, GHz

imag(Y(1,1))

m7

CHAPTER 4 The Design and Implementation of the Variable Gain Low Noise Amplifier

註.3 由於輸出匹配電路是採用主動電路來作設計，因此為了確認其是否為 50Ω之阻抗匹配，在此作了以下之驗證：

V_DC SRC11 Vdc=1.8 V TSMC_CM018RF_SPIRAL_TURN

L1 Ls=2.369 nH nr=2.5

TSMC_CM018RF_NMOS_RF M24

nr=16 wr=2.5 um lr=0.18 um Type=1.8V triple-well

Term Term1 Z=50 Ohm Num=1 V_DC

SRC8 Vdc=1.8 V

TSMC_CM018RF_NMOS_RF M26

nr=20 wr=2.5 um lr=0.18 um Type=1.8V triple-well

TSMC_CM018RF_NMOS_RF M25

nr=20 wr=2.5 um lr=0.18 um Type=1.8V triple-well TSMC_CM018RF_RES

R43

R=143.34 Ohm l=40 um w=2 um

Type=N+ Poly w/i silicide (w>=2.0) (RF)

m5freq=

m5=0.222 / -151.340

impedance = Z0 * (0.661 - j0.148) 5.250GHz

freq (100.0MHz to 10.00GHz)

S(1,1)

m5

CHAPTER 5 Measurement Result

在文檔中 題目：應用於 IEEE 802.11 a 5 GHz U-NII Band 之可變增益低雜訊放大器的設計 (頁 117-122)