第六章 結論與未來展望
6.2 未來展望
實驗結果證實我們所設計出的結構除了能夠保持 TFET 原有的特性之外，
在提升開電流的這個項目中，也成功的讓 n 型與 p 型 TFET 的開電流值達到 10-4安培等級，與其他研究文獻的結果相較，我們的研究成果擁有較理想的 開電流值，因此算是成功達到初步的研究目標。由於本研究主要著重於二維 元件特性分析，因此未來希望往三維結構的方向進行研究，嘗試結合現有的 MOSFET 技術，設計出具有理想電特性的 TFET，使 TFET 能夠應用的領域 更加廣闊。
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