(1) 以 Br- 及 TFSI- 為陰離子之聚合後高分子膜的 FTIR 分析結果與高分 子膜結構及官能基皆有相對應。
(2) 以 Br- 及 TFSI- 為陰離子之聚合後高分子膜之 TGA 分析可知道，
前者的 Td 點在 270℃~280℃， 後者的 Td 點在 345℃~380℃。而已 DSC 分析可知道，前者在 120℃~155℃， 後者在-1℃~3.5℃。
(3) 由 TGA 及 DSC 熱分析結果得知，具相同取代基，有架橋性的高分子 離子液體的 Td 及 Tg ，皆會大於沒有架橋性的高分子離子液體，而且 經離子交換後， Tg 點全部下移至約 0 度左右。
(4) 從 XRD 分析可知，以 Br- 及 TFSI- 為陰離子之聚合後高分子膜，皆 為低結晶度的高分子離子液體。
(5) 由 SEM 表面形貌，有網狀結構之高分子離子液體有較強韌的結構。
(6) 由導電度的結果可知，[a]IL 比例愈高、分子間的鏈段鍵結愈不穩定、
導電度愈高；[b]溫度愈高、離子移動性愈好、導電度愈好；[c]聚合後 線性結構較網狀結構之高分子之導電度高。
(7) 元件效率量測得知，PIL-C4-Br- 中比例為 0.1 wt% 的效率表現最好 (η=5.16%) ， PIL-C8-Br- 中 比 例 則 以 0.2 wt% 的 效 率 表 現 最 好 (η=4.72%)， PIL-C4-TFSI- 中比例 0.1 wt% 的效率表現最好(η=4.74%)，
PIL-C4-TFSI- 中比例 0.1 wt% 的效率表現最好(η=3.66%)。
(8) Tg越小、離子遷移率越大，元件效率表現會越好。
(9) 交流阻抗可得知元件內部阻抗關係，由電解質的阻抗大小剛好印證元 件效率高低表現。
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(10) IPCE 可以得知元件中各層之間的關係，並從中去改善缺點。
(11) 因為這八種材料太易裂解而無法進行歐傑電子能譜分析以便更深入 了解各個材料間的表面組織形態及化學結構，光以 XRD 的結果無法 更進一步證實相對的關係比較。
(12) 未來若有人想要更深入了解並改進此電解質的特性，交流阻抗分析結 果需有等效電路圖去計算其各個係數之間的關係，及計算出各能階圖 關係後，可以更深入了解 IPCE 結果中各成份間吸收光譜間的關係，
以利進行改善。
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