本論文設計分析應用於 V 頻帶之發射機前端子電路─功率放大器(Power Amplifier, PA)與 I/Q 調變器(I/Q Modulator)，使用台積電所提供的 TSMC CMOS 90nm RF 1P9M 標準製程設計驗證。
本論文設計了功率放大器(Power Amplifier, PA)與 I/Q 調變器(I/Q Modulator)’
兩電路；在第三章節中，功率放大器設計上採用 1：2：4 的三級共源極(common source, CS)設計架構，其中第一級與第二級設定為驅動級(Drive Stage)，第三級為 功率輸出級(Power Stage)，並在第三級加入一線性器，使功率放大器之線性度可 以再提升；在實際量測後，其表現趨勢皆趨近於設計預期，但仍有些許頻飄的問 題導致功率的輸出上並不如預期，因此沒有完整的量測到一組較為理想的結果表 現，也相信在電路的設計上仍有很大的進步空間，同時期望在之後的功率放大器 設計上可以有在更顯著的進步。
在第四章所研製之 I/Q 調變器(I/Q Modulator)過程中，由最基本的混頻原理作 為切入，並一一介紹一環形混頻器(Ring Mixer)的設計過程，並有效結合數學模型 加以驗證一 I/Q 調變器(I/Q Modulator)的電路架構與模型；然而，由於此電路的 DC 訊號需要利用鎊線方能夠饋入直流電壓，而在本次設計中並未加入防 ESD 電 路，在量測上有其風險，因此目前未有任何量測資料。
參 考 文 獻
●Chapter 2
[1] Kai Chang, RF and Microwave Wireless System, John Wiley & Sons, Inc., 2000.
[2] Guillermo Gonzalez, Microwave Transistor Amplifier-Analysis and Design, 2nd
Ed., Prentice Hall, Inc., 1984.
[3] David M. Pozar, Microwave Engineering, 3rd Ed, John Wiley & Sons, Inc., 2005.
[4] Behzad Razavi, RF Microelectronics, 2nd Ed., Prentice Hall PTR, 2012.
[5] Behzad Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill Series in Electrical and Computer Engineering , 2001
[6] Jeng-Han Tsai, “Millimeter-wave Transmitter Linearization and Gigabit Wireless
Communication Systems,” Graduate Institute of Communication Engineering
College of Electrical Engineering ＆ Computer Science National Taiwan University Doctoral Dissertation, January, 2007.[7] 林益璋，V
頻帶 CMOS 低雜訊放大器設計與分析
，國立臺灣師範大學應用電 子科技所碩士論文，民國 100 年 9 月[8] 林繼揚，
應用於 77 GHz 汽車防撞雷達系統之毫米波積體電路設計
，國立臺 灣師範大學應用電子科技所碩士論文，民國 101 年 7 月[9] 張瑞廷，CMOS/MEMS
射頻功率放大器與四次斜坡混頻器之研製
，國立成功 大學電機工程學系微電子工程研究所碩士論文，民國 98 年 7 月●Chapter 3
[10] Jeng-Han Tsai, Hong-Yeh Chang, Pei-Si Wu,Yi-Lin Lee, Tian-Wei Huang, and Huei Wang, “Design and Analysis of a 44-GHz MMIC Low-Loss Built-In Linearizer for High-Linearity Medium Power Amplifiers,” IEEE
TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 54,
[12] Yung-Nien Jen, Jeng-Han Tsai, Tian-Wei Huang, and Huei Wang, “ A V-band Fully-Integrated CMOS Distributed Active Transformer Power Amplifier for 802.15.TG3c Wireless Personal Area Network Applications,” IEEE Compound
Semiconductor IC Symposium, Aug. 2008, Invited paper.
[13] Ullrich R. Pfeiffer, and David Goren, “ A 23-dBm 60-GHz Distributed Active Transformer in a Silicon Process Technology, ” IEEE Trans. on Microwave
Theory and Techniques, VOL. 55, NO. 5, MAY 2007, pp. 857-865.
[14] Kuba Raczkowski, Steven Thijs, Walter De Raedt, Bart Nauwelaers, and Piet Wambacq, “ 50-to-67GHz ESD-Protected Power Amplifiers in Digital 45nm LP CMOS, ” IEEE Int. Solid-State Circuits Conference Dig. Tech. Papers., Feb.
2009, pp. 382-383.
[15] Wei L. Chan, John R. Long, Marco Spirito, and John J. Pekarik, “ A 60GHz-Band 1V 11.5dBm Power Amplifier with 11% PAE in 65nm CMOS, ” IEEE Int.
Solid-State Circuits Conference Dig. Tech. Papers., Feb. 2009, pp. 380-381.
[16] Tim LaRocca, and Mau-Chung Frank Chang, “ 60GHz CMOS Differential and Transformer-Coupled Power Amplifier for Compact Design,” IEEE Radio
Frequency Integrated Circuits Symposium, June 2008.
[17] Sofiane Aloui, Eric Kerherve, Robert Plana, and Didier Belot, “RF-pad, transmission lines and balun optimization for 60GHz 65nm CMOS power
amplifier,” IEEE Radio Frequency Integrated Circuits Symp., pp. 211 - 214, Jun.
2010.
[18] Baudouin Martineau, Vincent Knopik, Alexandre Siligaris, Frederic Gianesello, Didier Belot1, “A 53-to-68GHz 18dBm power amplifier with an 8-Way combiner in standard 65nm CMOS,” ISSCC Dig. Tech. Papers, pp. 428 - 429, Feb. 2010.
[19] C. Wang, M. Vaidyanathan, and L. E. Larson, “A capacitance compensation technique for improved linearity in CMOS class-AB power amplifiers,” IEEE J.
Solid-State Circuits, vol. 39, no. 11, pp. 1927 - 1937, Nov. 2004.
[20] Naoyuki Kurita and Hiroshi Kondoh Central Research Laboratory, Hitachi Ltd., Kokubunji, “60GHz and 80GHz wide band power amplifier MMICs in 90nm CMOS technology, ” IEEE Radio Frequency Integrated Circuits Symp., pp. 39 - 42, Jun. 2009.
[21] Wei L. Chan, John R. Long, Marco Spirito, John J. Pekarik, “A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS,” ISSCC Dig. Tech.
Papers, pp. 380 - 381, Feb. 2009.
[22] Kuba Raczkowski, Steven Thijs, Walter De Raedt, Bart Nauwelaers,Piet
Wambacq1, “50-to-67GHz ESD-Protected Power Amplifiers in Digital 45nm LP CMOS,” ISSCC Dig. Tech. Papers, pp. 382 - 383, Feb. 2009.
[23] Jenny Yi-Chun Liu, Adrian Tang, Ning-Yi Wang, Qun Jane Gu, Roc Berenguer, Hsieh-Hung Hsieh, Po-Yi Wu, Chewnpu Jou and Mau-Chung Frank Chang “A V-band Self-Healing Power Amplifier with Adaptive Feedback Bias Control in 65 nm CMOS, ” IEEE RFIC Symp., 2011, June 2011.
[24] Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin, “60 and 77GHz power amplifier in standard 90nm CMOS,” ISSCC Dig.
Tech. Papers, pp.562-563, Feb. 2008.
[25] 魏吉鴻，微波積體化功率放大器設計及研製，國立中央大學電機工程研究所 術士論文，民國 91 年 6 月
●Chapter 4
LO power,” IEEE Microw. Wireless Compon. Lett., vol. 19,no.5, pp. 332–334, May 2009
[27] Hong-Yeh Chang, Pei-Si Wu, Tian-Wei Huang, Huei Wang, Chung-Long Chang, and John G. J. Chern, “Design and analysis of CMOS broadband compact
high-linearity modulators for gigabit microwave/millimeter-wave applications,”
IEEE Trans. Microw. Theory Tech., vol. 54, no.1, pp.20 - 30, Jan. 2006.
[28] A. P. Freundorfer, K. Hamed, Y. Sun, Y. Antar, P. Frank, and D. Sawatzky, “A direct digital 2 Gb/s modulator/demodulator experiment in GaAs HBT at 30 GHz,” in Proc. Asia-Pacific Microw. Conf., Dec. 2006, pp. 1611 - 1614.
[29] Jeng-Han Tsai, and Tian-Wei Huang, “35–65-GHz CMOS broadband modulator and demodulator with sub-harmonic pumping for MMW wireless gigabit
applications,” IEEE Microw. Theory Tech., vol. 55, no. 10, pp. 2075 - 2085, Oct.
2007.
[30] Eric Juntunen, Matthew Chung-Hin Leung, Francesco Barale, Arun
Rachamadugu, David A. Yeh, Bevin George Perumana, Padmanava Sen, Debasis Dawn, Saikat Sarkar, Stephane Pinel, and Joy Laskar, “A 60GHz 38-pJ/bit
3.5-Gb/s 90nm CMOS OOK Digital Radio,” IEEE Trans. Microw. Theory Tech., Vol. 58, No. 2, pp. 348-355, Feb. 2010.
[31] Fujiang Lin, James Brinkhoff, Kai Kang, Duy Dong Pham, and Xiaojun Yuan, “A low power 60GHz OOK transceiver system in 90nm CMOS with innovative on-chip AMC antenna,” IEEE ASSC Conf., pp. 349-352, Nov. 2009.
[32] Ahmet ONCU, Kyoya TAKANOÁ , and Minoru FUJISHIMA, “8Gbps CMOS ASK modulator for 60GHz wireless communication,” IEEE ASSC Conf., pp.125-128, Nov. 2008.
[33] Hong-Yeh Chang, Ming-Fong Le, Chin-Shen Lin, Yi-Hsien Cho, Zuo-Min Tsai, and Huei Wang, “A 46GHz direct wide modulation bandwidth ASK modulator in
0.13um CMOS technology,” IEEE Microw. Wireless Compon. Lett., Vol.17, No.9, pp.691-693, Sept. 2007.
[34] Sanghoon Kang, Byounggi Choi, and Bumman Kim, “Linearity Analysis of CMOS for RF Application,” IEEE Trans. on Microw. Theory Tech., vol.51, pp.972-977, no.3, Mar. 2003.
[35] Jri Lee, Yenlin Huang, Yentso Chen, Hsinchia Lu, and Chiajung Chang, “A Low-Power Fully Integrated 60GHz Transceiver System with OOK Modulation and On-Board Antenna Assembly,” IEEE International Solid-State Circuits
Conference, 2009.
[36] David J. Allstot, Xiaoyong Li, and Sudip Shekhar, “Design considerations for CMOS low-noise amplifiers,” in Proc. IEEE Radio Frequency Integrated
Circuits Symp., pp. 97–100, Jun.2004.
[37] Ahmet Oncu, and Minoru Fujisima, “19.2mW 2Gbps CMOS Pulse Radio for 60GHz Band Wireless Communication,” IEEE Symposium on VLSI circuits
Digest, pp.158-159, 2008.
[38] Eric Juntunen, Matthew Chung-Hin Leung, Francesco Barale, Arun
Rachamadugu, David A. Yeh, Bevin George Perumana, Padmanava Sen, Debasis Dawn, Saikat Sarkar, Stephane Pinel, and Joy Laskar, “A 60-GHz 38-pJ/bit 3.5-Gb/s 90nm CMOS OOK Digital Radio,” IEEE Trans. on Microw. Theory
Tech., vol.58, pp.348-355, no.2, Feb. 2010
[39]
Jeng-Han Tsai,
“Design of 40-108-GHz Low Power and High-Speed CMOS Up/Down-Conversion Ring Mixer for Multistandard MMW Radio Applications”IEEE Transactions on Microware Theory and techniques, Vol.60, No.3, March
IEEE Microw. Wireless Compon. Lett., vol. 18, no. 8, pp. 554–556,Aug. 2008.
[41] Fan Zhang, Efstratios Skafidas, William Shieh, “A 60-GHz double-balanced Gilbert cell down-conversion mixer on 130-nm CMOS,” in IEEE RFIC Symp.
Dig., pp. 141–144, Jun. 2007.
[42]
Jeng-Han Tsai,
“Design of 1.2 V broadband, high data-rate MMW CMOSI/Q modulator and demodulator using modified Gilbert-cell mixer,” IEEE Trans.Microw. Theory Tech., vol. 59, no. 5, pp. 1350–1360, May 2011.
[43] Tomoaki Maekawa, Shuhei Amakawa, Noboru Ishihara, and Kazuya Masu,
“Design of CMOS inverter-based output buffers adapting the Cherry-Hooper broadbanding technique,” Circuit Theory and Design, 2009. ECCTD 2009.
European Conference on. IEEE, 2009.
[44] 白禮智，
覆晶式 Ka 頻段超外差發射機前端電路之研製
，國立中央大學通訊 工程研究所碩士論文，民國 94 年 7 月[45] 陳冠宇，
應用於微波存取全球互通之發射機研製
，國立中央大學電機工程研 究所術士論文，民國 95 年 6 月[46] 沈哲豪，
寬頻低功耗金氧半場效電晶體射頻環狀電阻性混頻器
，國立中央大 學電機工程研究所術士論文，民國 98 年 6 月[47] 黃俊穎，
應用於 WiMAX 與第四代行動通訊之 CMOS 直接升降頻器及數位調 控增益放大器設計
，國立中正大學電機工程研究所碩士論文，民國 97 年 7 月[48] 張育銓，
深次微米互補式金氧半製程之低功耗接收器前端電路設計
，淡江大 學電機工程學系碩士班 積體電路與計算機組，民國 101 年 6 月
自 傳
鍾懿威，目前就讀於國立台灣師範大學應用電子研究所，由於是高職生，因 此從高中階段就大量接觸與電學相關的基礎與實作，也因而奠定了對於電學的興 趣，於大學階段發現自己對於類比領域的不確定性感到極大的興趣，所以在專題 實作上決定朝著類比電路設計的方向前進，就這樣，在一個因緣際會下踏入了電 波的領域，幾年下來，從指導教授─蔡政翰 博士這邊學到了很多的東西，不論 是有關於電學的知識還是待人處事的道理。也在學長、同儕與學弟妹們的彼此切 磋學習上有了很大的進步，真的很感謝自己在師大六年的生涯遇見了很多不一樣 的人事物，使自己有現在這樣蛻變的可能。
學 術 成 就
Jeng-Han Tsai, Yi-Wei Chung, Hung-Da Shih, and Jian-Ping Chou, “A 7-12GHz Multi-Modulus Frequency Divider.” 2012 Asia-Pacific Microwave Conference, December 4-7,2012