第五章 總結與未來展望
B.7 計算過程
(2) 對於的情形， 1
兩式相減，得到k1k2
因此可將係數A1、A2，與衰減速率1、2簡化為
2 2 1,
1, 1,
1 2 1 2
1 1
2 2 2
0 0
r BD DB r r BD DB BD DB
DB DB
B D
A N N
2
2
2
參考文獻
[1] N. N. Ledentsov et. al., " Quantum dot heterostructure lasers," IEEE J. Sel.
Top. Quant. Electron. 6, 439 (2000).
[2] O. B. Shchekin, et al., "1.3um InAs quantum dot laser with T0=161 K from 0 to 80°C ," Appl. Phys. Lett. 80, 3277 (2002).
[3] N. M. Park, et al., " Band gap engineering of amorphous silicon quantum dots for light-emitting diodes ," Appl. Phys. Lett. 78, 2575 (2001).
[4] D. Pan, et al., "A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector," Appl. Phys. Lett. 75, 2719 (1999).
[5] J. W. Kim, et al., " Room temperature far infrared (8~10 um) photodetectors using self-assembled InAs quantum dots with high detectivity ," IEEE
Electron Device Letters 21, 329 (2000).
[6] J. Y. Marzin, et al., " Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs," Phys. Rev. Lett. 73, 716 (1994).
[7] S. A. Empedocles, et al., "Photoluminescence from single semiconductor nano- structures," Advanced Material 11, 1243 (1999).
[8] D. Leonard, et. al., "Direct formation of quantumsized dots from uniform coherent islands of InGaAs on GaAs surfaces," Appl. Phys. Lett. 63, 3203 (1993).
[9] D. Gammon, et. al., "Fine structure splitting in the optical spectra of single GaAs quantum dots," Phys. Rev. Lett. 76, 3005 (1996).
[10] M. Bayer, et. al., "Fine structure of neutral and charged excitons in self- assembled In(Ga)As/(Al)GaAs quantum dots," Phys. Rev. B 65, 195315 (2002).
[11] K. Kowalik, et. al.," Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots," Appl. Phys. Lett. 86, 041907 (2005).
[12] B. D. Gerardot, et. al.," Manipulating exciton fine structure in quantum dots with a lateral electric field," Appl. Phys. Lett. 90, 041101 (2007).
[13] A. J. Bennett, et. al.," Electric-field-induced coherent coupling of the exciton states in a single quantum dot," Nature Phys. 6, 947 (2010).
[14] M. Ghali, et. al.," Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field," Nat. Commun. 3, 661 (2012).
[15] M. Bayer, et.al.," Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots," Phys. Rev.
Lett. 82, 1748 (1999).
[16] S. Seidl, et. al.," Effect of uniaxial stress on excitons in a self-assembled quantum dot," Appl. Phys. Lett. 88, 203113 (2007).
[17] J. J. Finley, et. al.," Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot," Phys. Rev. B 63, 161305 (2001).
[18] M. Baier, et. al., " Optical spectroscopy of charged excitons in single quantum dot photodiodes," Phys. Rev. B. 64, 195326 (2001).
[19] P. W. Fry, et. al.," Inverted electron-hole alignment in InAs-GaAs self- assembled quantum dots," Phys. Rev. Lett. 84, 733 (2000).
[20] J. A. Barker, et. al., "Theoretical analysis of electron-hole alignment in InAs- GaAs quantum dots," Phys. Rev. B 61, 13840 (2000).
[21] T. M. Hsu, et. al.," Quantum-confined Stark shift in electroreflectance of InAs/
InxGa1−xAs self-assembled quantum dots ," Appl. Phys. Lett. 78, 1760 (2007).
[22] J. J. Finley, et. al.," Quantum-confined Stark shifts of charged exciton complexes in quantum dots," Phys. Rev. B 70, 201308 (2004).
[23] M. Grundmann, et, al., "InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure," Phys. Rev. B 52, 11969 (1995).
[24] D. J. Griffiths, "Introduction to quantum mechanics," Pearson Education (2005).
[25] G. Bester, et, al., " Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled In1-xGaxAs/GaAs quantum dots," Phys. Rev. B 67, 161302 (2003).
[26] K. F. Karlsson, et. al., " Fine structure of exciton complexes in high-symmetry quantum dots: Effects of symmetry breaking and symmetry elevation," Phys. Rev.
B 81, 161307 (2010).
[27] H. Tong, et. al., "Theory of excitons in cubic III-V semiconductor GaAs, InAs and GaN quantum dots:Fine structure and spin relaxation," Phys. Rev. B 83, 235323 (2011).
[28] L. He, et. al., "Highly reduced fine-structure splitting in InAs/InP quantum dots offering an efficient on-demand entangled 1.55um photon emitter," Phys.
Rev. Lett. 101, 157405 (2008).
[29] R. Seguin, et. al., "Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots," Phys. Rev. Lett. 95, 257402 (2008).
[30] T. Takagahara, "Theory of exciton doublet structures and polarization relaxation in single quantum dots," Phys. Rev. B 62, 16840 (2000).
[31] E. Poem et. al., "Polarization sensitive spectroscopy of charged quantum dots,"
Phys. Rev. B 76, 235304 (2007).
[32] H. Y. Ramirez, et. al., " Optical fine structures of highly quantized InGaAs/GaAs self-assembled quantum dots," Phys. Rev. B 81, 245324 (2000).
[33] J. W. Luo, et. al., "Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field," Phys. Rev. B 86, 161302 (2012).
[34] A. Trellakis, et. al., "The 3D nanometer device project nextnano: Concepts, methods, results," J. Comput. Electron. 5, 285 (2006).
[35] S. Birner, et. al., "Nextnano: General purpose 3-D simulations," IEEE Trans.
Electr. Dev. 4, 2137 (2007).
[36] M. F. Tsai, et. al., "Diamagnetic response of exciton complexes in semiconductor quantum dots," Phys. Rev. Lett. 101, 267402 (2008).
[37] P. Jin, et. al., "Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots," Appl. Phys. Lett. 85, 2791 (2004).
[38] C. E. Pryor, et.al., "Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots," Phys. Rev. B 72, 205311 (2004).
[39] Y. J. Fu, et. al., " Anomalous diamagnetic shift for negative trions in single semiconductor quantum dots," Phys. Rev. B 81, 113307 (2004).
[40] S. Rodt, et. al., "Repulsive exciton-exciton interaction in quantum dots," Phys.
Rev. B 68, 035331 (2003).
[41] C. H. Lin, et. al., "Anticorrelation between the splitting and polarization of the exciton fine structure in single self-assembled InAs/GaAs quantum dots," Phys.
Rev. B 83, 075317 (2011).
[42] L. Brusaferri, et. al., "Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots," Appl. Phys. Lett. 69, 3354 (1996).
[43] W. Yang, et. al., " Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots," Phys. Rev. B 56, 13314 (1997).
[44] B. Patton, et. al., " Trion, biexciton, and exciton dynamics in single self -assembled CdSe quantum dots," Phys. Rev. B 68, 125316 (2003).
[45] G. Sallen, et. al., " Exciton dynamics of a single quantum dot embedded in a nanowire," Phys. Rev. B 80, 085310 (2003).
[46] I. Favero, et. al., " Fast exciton spin relaxation in single quantum dots," Phys.
Rev. B 71, 233304 (2005).
[47] W. Becker, " Advanced Time-correlated single photon counting techniques,"
Springer-Verlag (2005).
[48] M. Wahl, "Time-Correlated Single Photon Counting."
[49] T. Kümmell, et. al., " Radiative recombination in photoexcited quantum dots up to room temperature:The role of fine-structure effects," Phys. Rev. B 81, 241306 (2010).
簡歷
姓名： 張胤傑 性別： 男
出生年月日：民國78年8月1日 籍貫：台灣省高雄市
學歷：
國立鳳新高級中學 (2004.9 – 2007.6) 國立交通大學電子物理系學士 (2007.9 – 2011.6) 國立交通大學電子工程系碩士 (2011.9 – 2013.11)
碩士論文題目：
砷化銦單量子點於垂直電場中之光激螢光
Photoluminescence of InAs Single Quantum Dots in Vertical Electrical Field