Although nitrogen incorporation into ultra-thin gate oxide could reduce gate leakage current effectively, the nitrided oxide will introduce the positive oxide charges to cause threshold voltage shift and transconductance degradation. Moreover, the nitrided oxides result in enhanced hot-electron-induced device degradations of the significant threshold voltage shift, the transconductance degradation, and the drain current reduction comparing with the conventional thermal gate oxide. In this study, we have also found that electron trap generation rather than the interface state generation should be the main hot-electron degradation mechanism for the deep sub-micron devices with ultra-thin nitrided gate oxide because of the observed results of the positive shift of threshold voltage, the insignificant variation of subthreshold swing, the reduction of gate leakage current, no significant slope changes of the Ib-Vcb
curves for DCIV measurement, and a small exponent value (n ~ 0.3) of the ∆Vt versus stress time plot. Therefore, the hot-electron-induced electron trapping in the ultra-thin nitrided gate oxide could eventually become a severe long-term reliability concern (CHE and SHE) for the sub-100nm technologies, and the plasma nitridation has be shown to be the most promising technique for the ultra-thin nitrided gate oxide applications.
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