CDM ESD Robustness of Deep N-Well

In this work, the CDM clamping by test circuit are GDPMOS and GGNMOS with different variable or different dimensions. The GDPMOS is realized with a p-type protection device and a PMOS device (W/L) of 180μm/0.09μm, whose gate and body is connected to Vdd. The GGNMOS is realized with a n-type protection device and a NMOS device (W/L) of 180μm/0.09μm, whose gate and body is connected to

Vss. The CDM ESD levels of devices were measured by ZapMaster and the tested devices were stressed by three continuous ESD zaps at every CDM ESD test level under non-socketed CDM (field-induce CDM) mode. The failure criterion is 30%

leakage current shift under 1-V VDD bias.

The positive and negative CDM level of the GDPMOS is connected a p-type protected device with length is 1.5µm of metal line and N+ guard-ring of the p-type protected device can be achieved 200V and -300V. The positive and negative CDM level of the GDPMOS is connected a p-type protected device with length is 300µm of metal line and N+ guard-ring of the n-type protected device can be achieved 400V and -500V. The positive and negative CDM level of the GDPMOS in deep N-well (DNW) is connected a n-type protected device with length is 1.5µm of metal line and N+

guard-ring of the p-type protected device can be achieved 100V and -300V. The positive and negative CDM level of the GDPMOS in deep N-well (DNW) is connected a p-type protected device with length is 300µm of metal line and N+ guard-ring of the p-type protected device can be achieved 200V and -500V. The positive and negative CDM level of the GDPMOS is connected a n-type protected device in deep N-well (DNW) with length is 1.5µm of metal line and N+ guard-ring of the p-type protected device can be achieved 100V and -200V. The positive and negative CDM level of the GDPMOS is connected a p-type protected device in deep N-well (DNW) with length is 300µm of metal line and P+ guard-ring of the p-type protected device can be achieved 200V and -400V.

The positive and negative CDM level of the GDPMOS is connected p-type protected device with resistance is 0.1kΩ of poly resistor and N+ guard-ring of the

400V and -500V. The positive and negative CDM level of the GDPMOS is connected p-type protected device with resistance is 10kΩ of poly resistor and N+ guard-ring of the n-type protected device can be achieved 800V and -700V.

The positive and negative CDM level of the GDPMOS is connected p-type protected device in deep N-well (DNW) with resistance is 0.1kΩ of poly resistor and N+ guard-ring of the p-type protected device can be achieved 200V and -400V. The protected device can be achieved 800V and -700V.

The positive and negative CDM level of the GDPMOS is connected p-type protected device with resistance is 0.1kΩ of poly resistor and N+ guard-ring of the p-type protected device can be achieved 200V and -300V. The positive and negative CDM level of the GDPMOS is connected p-type protected device with resistance is 1kΩ of poly resistor and N+ guard-ring of the p-type protected device can be achieved 300V and -500V. The positive and negative CDM level of the GDPMOS is connected n-type protected device with resistance is 10kΩ of poly resistor and N+ guard-ring of the p-type protected device can be achieved 800V and -700V.

Fig. 4.11 (a) compares the positive CDM level on the different p-type device with metal line and DNW, as the length of metal line increased, the positive CDM robustness increased. The different p-type device put in DNW can not remove the CDM discharge current, it will be even worse of the p-type device put in DNW.

Fig. 4.11 (b) compares the negative CDM level on the different p-type device with metal line and DNW, as the length of metal line increased, the negative CDM

robustness increased. The different p-type device put in DNW can not remove the CDM discharge current, it will be even worse of the p-type device put in DNW.

Fig. 4.12 (a) compares the positive CDM level on the different p-type device with a poly resistor and DNW, as the length of metal line increased, the positive CDM robustness increased. The different p-type device put in DNW can not remove the CDM discharge current, it will be even worse of the p-type device put in DNW.

Fig. 4.12 (b) compares the negative CDM level on the different p-type device with a poly resistor and DNW, as the length of metal line increased, the negative CDM robustness increased. The different p-type device put in DNW can not remove the CDM discharge current, it will be even worse of the p-type device put in DNW.

Table 4.3 Show the positive CDM level and negative CDM level on the different p-type device with poly resistor, metal line and DNW.

The positive and negative CDM level of the GGNMOS is connected a n-type protected device with length is 1.5µm of metal line and P+ guard-ring of the n-type protected device can be achieved 400V and -200V. The positive and negative CDM level of the GGNMOS is connected a n-type protected device with length is 300µm of metal line and P+ guard-ring of the n-type protected device can be achieved 600V and -500V. The positive and negative CDM level of the GGNMOS in deep N-well (DNW) is connected a n-type protected device with length is 1.5µm of metal line and P+

guard-ring of the n-type protected device can be achieved 200V and -100V. The positive and negative CDM level of the GGNMOS in deep N-well (DNW) is connected a n-type protected device with length is 300µm of metal line and P+

guard-ring of the n-type protected device can be achieved 500V and -400V. The

negative CDM level of the GGNMOS is connected a n-type protected device in deep N-well (DNW) with length is 300µm of metal line and P+ guard-ring of the n-type protected device can be achieved 700V and -600V.

The positive and negative CDM level of the GGNMOS is connected n-type protected device with resistance is 0.1kΩ of poly resistor and P+ guard-ring of the n-type protected device can be achieved 400V and -300V. The positive and negative CDM level of the GGNMOS is connected n-type protected device with resistance is 1kΩ of poly resistor and P+ guard-ring of the n-type protected device can be achieved 600V and -400V. The positive and negative CDM level of the GGNMOS is connected n-type protected device with resistance is 10kΩ of poly resistor and P+ guard-ring of the n-type protected device can be achieved more than 800V and -800V.

The positive and negative CDM level of the GGNMOS is connected n-type protected device in deep N-well (DNW) with resistance is 0.1kΩ of poly resistor and P+ guard-ring of the n-type protected device can be achieved 200V and -100V. The protected device can be achieved 800V and -700V.

The positive and negative CDM level of the GGNMOS is connected n-type protected device with resistance is 0.1kΩ of poly resistor and P+ guard-ring of the n-type protected device can be achieved 500V and -400V. The positive and negative CDM level of the GGNMOS is connected n-type protected device with resistance is 1kΩ of poly resistor and P+ guard-ring of the n-type protected device can be achieved 700V and -600V. The positive and negative CDM level of the GGNMOS is connected

n-type protected device with resistance is 10kΩ of poly resistor and P+ guard-ring of the n-type protected device can be achieved more than 800V and -800V.

Fig. 4.13 (a) compares the positive CDM level on the different n-type device with metal line and DNW, as the length of metal line increased, the positive CDM robustness increased. The different n-type device put in DNW can not remove the CDM discharge current, it will be even worse of the n-type device put in DNW.

Fig. 4.13 (b) compares the negative CDM level on the different n-type device with metal line and DNW, as the length of metal line increased, the negative CDM robustness increased. The different n-type device put in DNW can not remove the CDM discharge current, it will be even worse of the n-type device put in DNW.

Fig. 4.14 (a) compares the positive CDM level on the different n-type device with a poly resistor and DNW, as the length of metal line increased, the positive CDM robustness increased. The different n-type device put in DNW can not remove the CDM discharge current, it will be even worse of the n-type device put in DNW.

Fig. 4.14 (b) compares the negative CDM level on the different n-type device with a poly resistor and DNW, as the length of metal line increased, the negative CDM robustness increased. The different n-type device put in DNW can not remove the CDM discharge current, it will be even worse of the n-type device put in DNW.

Table 4.4 Show the positive CDM level and negative CDM level on the different n-type device with poly resistor, metal line and DNW.

(a)

(b)

Fig.4.11 Comparison among (a) positive CDM level and (b) negative CDM level of the different p-type device with metal line and DNW.

0 50 100 150 200 250 300

(a)

(b)

Fig.4.12 Comparison among (a) positive CDM level and (b) negative CDM level of

0 2 4 6 8 10

(a)

(b)

Fig.4.13 Comparison among (a) positive CDM level and (b) negative CDM level of the different n-type device with metal line and DNW.

0 50 100 150 200 250 300

(a)

(b)

Fig. 4.14 Comparison among (a) positive CDM level and (b) negative CDM level of the different n-type device with poly resistor and DNW.

0 2 4 6 8 10

Table 4.3 The positive CDM level and negative CDM level of the different p-type device with poly resistor, metal line, and DNW.

Table 4.4 The positive CDM level and negative CDM level of the different n-type device with poly resistor, metal line, and DNW.