Future Works

With the continuously scaling CMOS technology, the gate oxide becomes much thinner. ESD become one of the most important reliability issues during mass production, must be taken into consideration. Therefore, all integrated circuits used in the wireless communication products need to be equipped with ESD protection designs. However, ESD protections cause radio-frequency (RF) performance degradation with several undesired effects, such as degrade the small-signal gain of the circuit or takes up too much layout area. Inductor-Assisted Silicon-Controlled Rectifier (LASCR) of this study will be able to overcome these drawbacks. LASCR devices exhibit good high-frequency performance between 0~35GHz, so they can be used for wideband or high-speed applications without degrading the performance of circuit.

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自 傳

研究生張榮堃，生於台中市，家中父母關係良好，一家和樂，

雖然國高中階段的求學路程並非順利，所幸最後進入國立台灣師範 大學應用電子科技學系就讀。然而大學期間還在摸索未來的定位，

以致於成績並非理想，在大三的專題課程選擇了晶片設計的方向，

意外的發現對此頗感興趣。研究所階段幸運的考取國立台灣師範大 學電機工程學系，繼續選擇晶片設計這方向深造，雖然學習能力並 不是頂尖，但也很願意去了解所有相關知識，也喜歡和同學們互相 交換想法和意見。感謝老師的提拔，未來將會繼續深造，願能用己 微薄之力為人類社會創造更好的未來。

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學 術 成 就

[1] C.-Y. Lin and R.-K. Chang, “On-chip ESD protection designs with SCR-based devices in RF integrated circuits,” IEEE Conf. Consumer Electronics-Taiwan, pp.

15-16, May 2014.

[2] C.-Y. Lin, P.-H. Chang, and R.-K. Chang, “Improving ESD Robustness of PMOS Device with Embedded SCR in 28-nm High-K/Metal Gate CMOS Process,” IEEE Trans. Electron Devices, vol. 62, no. 4, pp. 1349-1352, Apr. 2015.

[3] C.-Y. Lin and R.-K. Chang, “Design of ESD protection device for K/Ka-band applications in nanoscale CMOS process,” accepted by IEEE Trans. Electron Devices.