砷化鋁鎵/砷化銦鎵金屬-氧化物-半導體擬晶性高電子遷移率電晶體高頻參數萃取與元件模型分析

/

-

-Parametric Extraction and High-Frequency Model

Build-Up for AlGaAs/InGaAs MOS-pHEMTs

D値77577値

/

-

Microwave Office

-

-銦CAD)

-

-RF

MOS-HEMT

MMIC

Abstract

In this topic, we will explore the ozone water treatment to

form the oxide layer of AlGaAs /InGaAs metal - oxide –

semiconductor contemplated the crystalline high electron

mobility transistors without ozone water treatment high electron

mobility ratethe transistor characteristics as a comparison,

analysis of both the impact on the device characteristics, such as:

the current-voltage characteristic, extrinsic transconductance

values and breakdown voltage.

By the Microwave Office computer software, create

transistors small-signal equivalent model. However, in the metal

- oxide - semiconductor high electron mobility transistors

established with the participation of the high-frequency

component model number analysis and compared with the

difference between the structure of the components of the

traditional gate and explore its physical significance, very little

in proposed the complete details of the study discussed in the

literature. The topic develop by computer-aided design (CAD)

nature of small-signal components extracted parameters for

metal - oxide - semiconductor high electron mobility transistor

and a traditional gate structure structure of the high-speed

components to construct a complete RF components model; thus

faster than the device structure differences, small signal

components for each parameter, discussed in detail the important

physical significance. The topic via the high-frequency

parameters extracted successfully established with high

precision quasi possessed the physical significance of the

MOS-HEMT high frequency component model, which develop

a high-frequency component model parameter extraction

platform can also provide direct MMIC design technology of

industrial applications .

1

Abstract

2

1

6

2

9

2-1

12

2-2

18

2-2-1

( Ls, Lg, Ld )

20

2-2-2

( Rs, Rg, Rd ) 21

2-2-3

( Cpd, Cpg )

21

2-2-4

( Cgs, Cgd, Cds )

22

2-2-5

( gm ) 22

2-2-6

( Rds ) 23

2-2-7

( τ )

23

2-2-8

( Ri ) 24

3

25

3-1

25

3-1-1

25

3-1-2

27

3-1-3 S

27

3-2

30

3-3

30

3-4

38

3-4-1 HEMT

38

3-4-2

39

3-4-3

40

4

42

4-1

42

4-1-1

-

42

4-1-2

44

4-1-3

-

-

47

4-2

48

4-3

51

4-3-1

HEMT

51

4-3-2 MOS-HEMT

59

4-3-3

67

5

70

71

1

(MMIC)

[1]-[5]

InGaAs

InGaAs

[6]

(HEMT)

(RFIC)

--

(MOS-HEMT)

MMIC

IC

Microwave Office

(CAD)

-

-(MOS-HEMT)

RF

RF

2

/

(HEMTs)

(MMIC)

(Saturation

Velocity)

(f

T

)

(2.1)

V

s

L

g

f

T

V

s

V

s

V

s

f =

T

_2πlL

g

(1)

(Intrinsic Transcoductance, g

m

)

f

T

(2)

(n, Φ

B

, I

g

)

(3)

(Output Conductance, g

ds

)

(A

V

=

g

m

/g

ds

)

(4)

(Gate Recess)

(Threshold Voltage, V

th

)

(Source Resistance, R

S

)

(

)

(

)

HEMTs

(1)

(2)

(3) 2DEG

(HEMT)

2-1

[7]

Y

Y

( C

gs

, R

i

, g

m

, τ , C

gd

, R

ds

, C

ds

)

Z

(HEMT)

-

-

(MOS-HEMT)

(dangling bond)

!

.1

Oxide

Cap 150 Å

i-Al

0.22

Ga

0.78

As Buffer 1000 Å

i-GaAs Buffer 5000 Å

S.I. GaAs Substrate

i-Al

0.22

Ga

0.78

As Spacer 75 Å

i-In

0.24

Ga

0.76

As Channel 120 Å

i-Al

0.22

Ga

0.78

As Spacer 75 Å

n-Al

0. 22

Ga

0.78

As Schottky Contact Layer 500 Å

n

+

-GaAs

n

+

-GaAs

Ni/Au

Ni/Au

Conventional

MOS-HEMT

Ohmic

AuGeNi/Au

Ohmic

AuGeNi/Au

Ohmic

AuGeNi/Au

HEMT

MOS-HEMT

δ-

HEMT

GaAs

GaAs

Al

0.22

Ga

0.78

As

Al

0.22

Ga

0.78

As

In

0.24

Ga

0.76

As

Al

0.22

Ga

0.78

As

δ-

Al

0.22

Ga

0.78

As

GaAs

2.1

Al

0.22

Ga

0.78

As

Ni/Au

HEMT

2.1

MOS-HEMT

Ni/Au

Al

0.22

Ga

0.78

As

(1)

(Cap Layer)

InGaAs

10

19

cm

-3

HEMT

(g

m

)

(f

t

)

HEMT

(gate recess)

(parallel conduction effect)

(2)

(Schottky Layer)

InAlAs /InGaAs

InAlAs

InGaAs

(high sheet charge density)

InAlAs

(3) δ-

(δ-doped Carrier Supply Layer)

δ-

HEMT

(a)

(b)

(c)

(d)

δ-

V-FET

2µm

HEMT

δ-HEMT

δ-(4)

(Spacer Layer)

HEMT

g

m

20 Å ~50 Å

(5)

(Pseudomorphic InGaAs Channel Layer)

HEMT

2.2

2.3

InGaAs

GaAs

HEMT

!

.4 In

x

Ga

1-x

As

InAs

(6)

(Buffer Layer)

GaAs

-GaAs

AlGaAs

AlGaAs

GaAs

AlGaAs

2-2

HEMT

S

y

z

h

100 MHz

y

z

h

S

S

20

50 GHz

20 GHz

2.5

HEMT

MOS-HEMT

RF

-

-

C

ox,gd

C

ox,gs

-

C

ox,ds

S

20

GHz

2.6

!

.5 (a)

HEMT

(b)MOS-HEMT

RF

（a)

!

.6 HEMT

2-2-1

( Ls, Lg, Ld )

L

g

, L

d

, L

s

L

g

L

s

5

10 pH

1 pH

2-2-2

( Rs, Rg, Rd )

R

s

R

g

R

d

R

s

R

d

R

g

R

s

R

d

S

2-2-3

( C

pd

, C

pg

)

C

pg

C

pd

C

pg

C

pd

C

pg

C

pd

fF

S

2-2-4

( C

gs

, C

gd

, C

ds

)

C

gs

C

gd

-

-C

gd

C

gs

S

-

C

ds

C

ds

C

gs

1 pF/mm(

)

C

gd

C

gs

C

gs

C

gs

C

gd

V

ds

= 0

V

2-2-5

( gm )

g

m

I

ds

V

gs

--

I

ds

- V

gs

I

ds

g

m

_V

gs

∂

=

∂

(2.2)

2-2-6

( Rds )

R

ds

g

ds

I

ds

V

ds

-I

ds

-V

ds

(2.3)

2-2-7

( τ )

-τ

1 ps

1

gs ds ds V constant ds ds

I

g

R

V

=

∂

=

=

∂

2-2-8

( Ri )

R

i

S

11

3

3-1

S

3-1-1

(Test

Fixture Measurement)

(On-wafer Measurement)

(1)

(Device Under Test, DUT)

(Chip-Form)

(Carrier Assembly)

(Bonding Wire)

(Metal Pad)

(Microstrip Line)

Midsection

Midsection

3.1

Midsection

Midsection

!

.7

(2)

3-1-2

y

z

h

100 MHz

y

z

h

(open)

(short)

S

3-1-3 S

S

(incident)

(transmission)

(reflection)

3.2

!

.8

S

S

20

50 GHz

(1) Network Analyzer

(DUT)

S

DUT

(2) Synthesized Sweeper

a

1

,a

2

：

入射波

b

₁

,b

₂

：

反射波

1 11 1 12 2 2 21 1 22 2

b

s a

s a

b

s a

s a

=

+

=

+

2 2 1 1 1 11 0 1 2 21 0 1 1 12 0 2 2 22 0 2 a a a a

b

s

a

b

s

a

b

s

a

b

s

a

= = = =

=

=

=

=

：

輸入反射係數

：

正向透射係數

：

反向透射係數

：

輸出反射係數

Two-Port

Network

a

1

a

1

b

1

b

1

Port-1

Port-2

(3) Test Set

(Port-1

Port-2)

S

(4) DC Bias Supplies

S

50ohm

S

DUT

Port-1

Port-2 terminate

S

11

S

21

Test Set

DUT

Port-2

Port-1 terminate

S

22

S

12

S

11

S

21

S

22

S

12

S

S

S

(2)

(3)

(Wafer-Probing

System)

(Network Analyzer)

3-2

[8]- [10]

Dambrine et al.

S

S

3-3

[11]- [15]

3.3

HEMT

C

pg

, C

pd

, R

g

, R

d

,

R

s

, L

g

, L

d

L

s

C

gs

, R

i

, C

gd

,

g

m

, τ , R

ds

C

ds

!

.9

Y

PI

Y

Y

3.4

Y

(

)

!

.10 Y

Network

3.4

Y

11

Y

22

Y

12

Y

21

Y

(3.1)

(3.2)

Y

(3.3)

(3.6)

(3.3)

(3.4)

(3.5)

(3.6)

i

1

y

=

11

_v

v = 0

2

1

i

1

y

=

12

_v

v = 0

1

2

i

2

y

=

21

_v

v = 0

2

1

i

2

y

=

22

_v

v = 0

1

2

i = y

v + y

v

1

11 1

12 2

i = y

v + y

v

2

21 1

22 2

HEMT

Y

C

gs

R

i

(Bypass)

C

gs

3.5

Y

12

(3.7)

!

.11

Y

12

(3.7)

Y

22

3.6

V

2

i

2

Y

22

(3.8)

y

= j

C

12

gd

C

ds

R

o

C

gd

C

gd

_R

_ds

C

ds

!

.12

Y

22

(3.8)

1

y

=

+ jw(C

+C

)

22

_R

ds

gd

ds

3.7

V

2

V

1

i

2

Y

21

(3.9)

!

.13

Y

21

(3.9)

Y

11

3.8

i

1

(3.10)

!

.14

Y

12

(3.10)

2

2

w R C

C

i gd

gs

y

=

+ jw

+C

11

_{1+w C}

2 2

_R

2

_{1+ w C}

2 2

_R

gd

gs i

gs i





















C

gs

R

i

C

gd

g

m

Ve

-jwτ

-jw

g

e

m

y

=

jwC

21

_{1+jwR C}

gd

i gs

τ

C

gs

R

i

C

gd

g

m

Ve

-jwτ

y

(3.7)

(3.8)

(3.9)

(3.10)

5GHz

1+w

2

R

i2

C

gs2

1

(3.11)

(3.12)

(3.13)

(3.14)

2

2

y

= w R C

+ jw C

+ C

11

i gd

gs

gd













y

= g

jw C

+ g

R C

+

21

m

gd

m

i gs

τ















_

_







1

y

=

+ jw(C

+C

)

y

= j

C

12

gd

2

2

w R C

C

i gd

gs

y

=

+ jw

+C

11

_{1+w C}

2 2

_R

2

_{1+ w C}

2 2

_R

gd

gs i

gs i





















-jw

g

e

m

y

=

jwC

21

_{1+jwR C}

gd

i gs

τ

1

y

=

+ jw(C

+C

)

22

_R

ds

gd

ds

y

= j

C

12

gd

HEMT

Y

Y

C

gs

, R

i

, g

m

, τ , C

gd

, R

ds

C

ds

Y

3.9

Y

2

2

w R C

C

i gd

gs

y

=

+ jw

+C

11

_{1+w C}

2 2

_R

2

_{1+ w C}

2 2

_R

gd

gs i

gs i





















-jw

g

e

m

y

=

jwC

21

_{1+jwR C}

gd

i gs

τ

1

y

=

+ jw(C

+C

)

22

_R

ds

gd

ds

y

= j

C

12

gd

11

12

21

22

s

s

s

s

















Z

jwL

Z

11

g

12

Z

Z

jwL

21

22

d

















Y

jwC

Y

11

pg

12

Y

Y

jwC

21

22

pd

















Z

R

Z

R

11

s

12

s

R

jwL

jwL

g

s

s

Z

R

Z

R

21

s

22

s

jwL

R

jwL

s

d

s

































S

Z

Y

Z

Z

Y

Z

Y

2

2

y

= w R C

+ jw C

+ C

11

i gd

gs

gd













y

= g

jw C

+ g

R C

+

21

m

gd

m

i gs

τ















_

_







1

y

=

+ jw(C

+C

)

22

_R

ds

gd

ds

y

= j

C

12

gd

5GHz

1+w

2

R

i2

C

gs2

1

Y

(a)

S

(b)

S

Z

L

s

L

d

(c)

Z

Y

C

pg

C

pd

(d)

Y

Z

R

g

, R

s

, L

s

R

d

(e)

Z

Y

3.9

HEMT

Y

Y

C

gs

, R

i

, g

m

, τ , C

gd

, R

ds

C

ds

Z

3-4

[16]

3-4-1 HEMT

HEMT

--

HEMT

C

ds

-

-C

gs

C

gd

R

i

R

gd

3.10

V

ds

HEMT

!

.16

V

ds

HEMT

V

ds

C

gs

C

ds

HEMT

C

pg

C

pd

3-4-2

[17]

--

-(fringing-Capacitance)

(3.15)

C

f

GHz

(e.g.5GHz)

Y

3.11

!

.17

HEMT

3.11

Y

(3.16)

(3.17)

(3.18)

(3.16)

(3.18)

C

pg

C

pd

C

f

3-4-3

[18]-[20]

G

S

C

f

C

f

C

pg

C

ds

C

pd

D

S

y11= jw C

+ 2C

pg

f













y

= y

= jwC

12

21

－

f

y

= jw C + C

22

f

pd













C

pg

C

pd

Z

Z

R

s

R

d

R

g

L

g

L

s

L

d

(3.19)

(3.20)

(3.21)

Z

R

c

nkT

qI

g

L

s

Z

12

L

g

Z

11

L

d

Z

22

R

s

Z

12

R

g

Z

11

R

d

Z

22

R

_nkT

c

Z

= R + R +

+

+ jw L + L

11

s

g

₃

_qI

s

g

g













R

c

Z

= Z

= R +

+ jwL

12

21

s

₂

s

(

)

Z

= R + R + R + jw L + L

22

s

d

c

s

d

4

4-1

1.2 × 100 µm

2

5 µm

KEITHLEY 4200

4-1-1

4.1

4.2

300 K

HEMT

MOS-HEMT

(I

DS

)-

(V

DS

)

-

(V

GS

)

1 V

-2 V

-0.5 V/step

4.3

HEMT

MOS-HEMT

-MOS-HEMT

!

.18 300K

HEMT

0 2 4 0 100 200 300 400 D r a in C u rr en t D e n si ty ( m A /m m ) Drain-Source Voltage (V) 0 2 4 0 100 200 300 400 V_GS = 1 V~ -2 V, step = -0.5 V Conventional

!

.19 300K

MOS-HEMT

!

.20 300K

HEMT

MOS-HEMT

0 2 4 0 100 200 300 400 V_GS = 1 V~ -2 V, step = -0.5 V D r a in C u rr en t D e n si ty ( m A /m m ) Drain-Source Voltage (V) MOS-HEMT 0 2 4 0 100 200 300 400 V_GS= 1 V~ -2 V step= -0.5 V D r a in C u r re n t D en si ty ( m A /m m ) Drain-Source Voltage (V) MOS-HEMT Conventional

4-1-2

4.4

4.5

HEMT

MOS-HEMT

V

DS

= 3 V

(g

m

)

(I

DS

)

V

GS

4.6

!

.21 300 K

V

DS

= 3 V

!

.22 300 K

V

= 3 V

0 50 100 150 200 E x tr in si c T r an sc on d u ct an c e g m (m S /m m ) -2 0 20 100 200 300 400 D rai n S at u r at ion C u r re n t I D ( m A /m m ) Gate-Sorece Voltage (V) V_DS = 2.5 V Conventional MOS-HEMT V_DS=2.5 V 0 50 100 150 200 E x tr in si c T r an sc on d u ct an c e g m (m S /m m ) -2 0 20 100 200 300 400 D rai n S at u r at ion C u r re n t I D ( m A /m m ) Gate-Sorece Voltage (V)

MOS-HEMT

!

.23 300 K

V

DS

= 3 V

MOS-HEMT

4.1

MOS-HEMT

I

DS

g

m

GVS

V

th

Conventional

MOS-HEMT

I

dss0

(mA/mm)

151

208

I

d,max

(mA/mm)

292

374

gm,max (mS/mm)

129

162

GVS (V)

0.932

1.105

V

th

(V)

-1.23

-1.05

MOS-HEMT 0 50 100 150 200 E x tr in si c T ra n sc o n d u ct a n c e (m S /m m ) -2 0 20 100 200 300 400 D ra in C u r re n t D en si ty ( m A /m m ) Gate-Sorece Voltage (V) V_DS=2.5 V Conventional

4.1

-

(I

dss

)

(I

d,max

)

MOS-HEMT

g

m

HEMT

MOS-HEMT

(GVS)

I

DS

HEMT

0.932 V

MOS-HEMT

GVS

1.105 V

AlGaAs

I

DSS0

, I

D,max

, g

m,max

GVS

[21]

(4.1)

Φ

B

∆E

C

In

x

Ga

1-x

AsSb

(d+∆d)

2DEG

4.1

MOS-HEMT

∆

E

n

(d + ∆d)

φ

c

2DEG

B

V

=

-

-th

_q

_q

_ε

4-1-3

-

4.7

MOS-HEMT

-(BV

GD

)

(V

on

)

I

G = 1mA/mm

w

V

GD

!

.24 300K

MOS-HEMT

4.2

MOS-HEMT

-MOS-HEMT

4.2

MOS-HEMT

Conventional

MOS-HEMT

BV

GD

(V)

13

29.5

-40 -30 -20 -10 0 -1.0 -0.5 0.0 0.5 1.0 Conventional MOS-HEMT G a te C u r r en t D e n si ty ( m A /m m ) Gate-Drain Voltage (V) 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 G a te C u rr en t D en si ty ( m A /m m ) Gate-Drain Voltage (V)

4-2

0.2

50 GHz

HP8510B

1.2×200 µm

2

5 µm

0 dB

H

21

f

T

f

max

(MAG)

f

T

f

max

(4.2)

(4.3)

2 (

)

g

m

f

T

_C

_C

GS

GD

π

≈

+

max

1 2

2[

(

)

2

]

0

f

T

f

G

R

R

C

G

S

π

GD

≈

+

+

4.8

4.9

MOS-HEMT

(f

T

)

(f

max

)

!

.25 V

DS

= 2.5 V

1.2×200 µm

2

HEMT

RF

!

.26 V

DS

= 2.5 V

1 10 0 10 20 30 40 f_T = 10.40 GHz f_max = 14.64 GHz G a in ( d B ) Frequency (GHz) Conventional V_DS = 2.5 V, V_GS = -0.5 V 1 10 0 10 20 30 40 G a in ( d B ) Frequency (GHz) MOS-HEMT V_DS = 2.5 V, V_GS = 0 V f_T = 14.64 GHz f_max = 27.09 GHz

4.3

V

DS

= 2.5 V

(f

T

)

(f

max

)

MOS-HEMT

HEMT

40.1%

85.04%

MOS-HEMT

g

m

C

GS

Conventional

MOS-HEMT

fT (GHz)

10.40

14.64

fmax (GHz)

14.64

27.09

4.3

1.2×200 µm

2

MOS-HEMT

f

T

f

max.

4-3

4-3-1

HEMT

S

HEMT

0.1 GHz

20 GHz

10

GHz

Cold Model

HEMT

(1)

(L

s

, L

d

, L

g

, R

s

, R

g

, R

d

, C

pg

, C

pd

)

(2)

(C

gs

, C

gd

,C

ds

, g

m

, g

d

, R

i

, τ)

Microwave

Office

S

(1)

V

ds

= 0 V

V

gs

= 1 V

(2)

V

ds

= 0 V

V

gs

= -3 V

(3)

V

ds

= 2 V

V

gs

= -1.5 V

1.

V

ds

= 0 V

V

gs

= 1 V

4.4

Rs (ohm)

0.533

Rg (ohm)

18.05

Rd (ohm)

3.885

Ls (nH)

-6

8.23 10

×

Lg (nH)

0.02005

Ld (nH)

0.06985

4.4

2.

V

ds

= 0 V

V

gs

= -3 V

4.5

C

pg

(pF)

0

Cpd (pF)

0

4.5

3.

V

ds

= 2 V

V

gs

= -1.5 V

4.6

Cgs (pF)

0.411

Cgd (pF)

0.0411

Cds (pF)

0.006585

gm (mS)

29.32

gd (mS)

0.671

Ri (ohm)

6.488

τ

_(ps)

_3.355

4.6

Microwave Office

S

Smith Chart

Smith Chart

4.10

!

.27

HEMT

4.11(a)

4.12(a)

4.13(a)

4.14 (a)

4.11 (b)

4.12 (b)

4.13 (b)

4.14 (b)

L

d

R

g

R

d

C

pd

C

ds

L

g

L

s

R

g

R

i

R

s

C

pg

C

gs

C

gd

G

m

T

!

.28 (a)

HEMT

S

11

Smith Chart

!

.29 (a)

HEMT

S

12

Polar

!

.30 (a)

HEMT

!

.31 (a)

HEMT

4-3-2 MOS-HEMT

MOS-HEMT

-

-C

ox,gd

C

ox,gs

-

C

ox,ds

S

HEMT

0.1 GHz

20 GHz

10

GHz

Cold Model

HEMT

(1)

(L

s

, L

d

, L

g

, R

s

, R

g

, R

d

, C

pg

, C

pd

)

(2)

(C

ox,gs

, C

ox,gd

, C

ox,ds

, C

gs

, C

gd

, C

ds

, g

m

, g

d

, R

i

, τ)

Microwave Office

(1)

V

ds

= 0 V

V

gs

= 1 V

(2)

V

ds

= 0 V

V

gs

= -3 V

(3)

V

ds

= 2 V

V

gs

= - 1.5 V

1.

V

ds

= 0 V

V

gs

= 1 V

4.7

Rs (ohm)

0.1

Rg (ohm)

14.55

Rd (ohm)

0.25

Ls (nH)

-6

7.43 10

×

Lg (nH)

0.01353

Ld (nH)

0.1297

4.7

2.

V

ds

= 0 V

V

gs

= -3 V

4.8

Cpg (pF)

0

Cpd (pF)

0

4.8

3.

V

ds

= 2 V

V

gs

= -1.5 V

4.9

Cgs (pF)

0.4591

Cgd (pF)

0.0485

Cds (pF)

0.08297

Cox,gs (pF)

1.6678

Cox,gd (pF)

0.1443

Cox,ds (pF)

0.0181

g

m

(mS)

36.32

gd (mS)

0.337

Ri (ohm)

5.63

τ

_(ps)

_3.355

4.9

Microwave Office

S

Smith Chart

Smith Chart

4.15

!

.32MOS-HEMT

4.16 (a) 4.17 (a) 4.18 (a) 4.19 (a)

4.16 (b)

4.17 (b)

4.18 (b)

4.19 (b)

L

g

C

pg

R

g

R

i

C

gs

C

gs, ox

L

s

R

s

C

gd

G

m

T

C

gd,ox

R

g

L

d

R

d

C

pd

C

ds

C

ds,ox

!

.33 (a) MOS-HEMT

S

11

Smith Chart

!

.34 (a) MOS-HEMT

!

.35 (a) MOS-HEMT

!

.36 (a) MOS-HEMT

4-3-3

Conventional

MOS-HEMT

Lg (nH)

0.02005

0.01353

Ls (nH)

-6

8.23 10

×

7.43 10

×

-6

Ld (nH)

0.06985

0.1297

R

s

(ohm)

0.533

0.1

Rg (ohm)

18.05

14.55

Rd (ohm)

3.885

0.25

Cpd (pF)

0

0

C

pg

(pF)

0

0

Conventional

MOS-HEMT

Cgs (pF)

0.411

0.4591

Cgd (pF)

0.0411

0.0485

Cds (pF)

0.006585

0.08297

Cox,gs (pF)

1.6678

Cox,gd (pF)

0.1443

C

ox

,

ds

(pF)

0.0181

Conventional

MOS-HEMT

Ceq,gs (pF)

0.411

0.36

C

eq,gd

(pF)

0.0411

0.0363

Ceq,ds (pF)

0.006585

0.01486

gm (mS)

29.32

36.32

gd (mS)

0.671

0.337

R

i

(ohm)

6.488

5.63

τ

_(ps)

_3.355

_3.355

MOS-HEMT

(1)

-

-MOS-HEMT

g

m,max

(2)

g

d

(3)

-

-(1)

(R

s

, R

d

)

R

s

, R

d

(2)

-

(C

eq,ds

)

-C

eq,ds

HEMT

(3)

(C

eq,gd,

C

eq,gs

)

MOS-HEMT

C

eq,gd,

C

eq,gs

5

/

MOS

S

HEMT

HEMT

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