Optimization of amorphous silicon layers in polycrystalline based heterostructure solar cell 溫世傑、張國雄
E-mail: 317679@mail.dyu.edu.tw
ABSTRACT
In this study, simulation software ALTAS is applied for simulating the influence of amorphous layer thickness and energy gap on the performance of hetero-junction solar cells. We assume the defect density keeps unchanged when layer parameters are changed. In such case, different film thicknesses and energy gaps make different Voc and Isc, We found that Voc and Jsc changes as i-a-Si band gap changes. We also found that Voc increased as n-layer thickness decreased. Consider the matching of Back Surface Field (BSF), and Extinction Coefficient, the maximum conversion efficiency can reach to 9.9 %.
Keywords : TCAD、polycrystalline silicon、solar cell
Table of Contents
封面內頁 簽名頁 授權書．．．．．．．．．．．．．．．．．．．．．．．．．iii 中文摘要．．．．．．．．．．．．
．．．．．．．．．．．．iv Abstract．．．．．．．．．．．．．．．．．．．．．．．．． v 誌謝．．．．．．．．
．．．．．．．．．．．．．．．．．．vi 目錄．．．．．．．．．．．．．．．．．．．．．．．．．．viii 圖目錄．
．．．．．．．．．．．．．．．．．．．．．．．． x 表目錄．．．．．．．．．．．．．．．．．．．．．．．．
．xiii 第一章 緒論．．．．．．．．．．．．．．．．．．．．．． 1 1.1 前言．．．．．．．．．．．．．
．．．．．．．1 1.2 研究背景．．．．．．．．．．．．．．．．．．2 1.3 研究目的．．．．．．．．．．
．．．．．．．．3 第二章 實驗原理．．．．．．．．．．．．．．．．．．．． 4 2.1 太陽能電池的種類．．
．．．．．．．．．．．．4 2.1.1 單晶矽太陽能電池．．．．．．．．．．．4 2.1.2 多晶矽太陽能電池．．．．．．
．．．．．5 2.1.3 非晶矽太陽能電池．．．．．．．．．．．6 2.1.4 化合物半導體太陽能電池．．．．．．．．7 2.1.5 染料敏化型 (Dye-Sensitized Solar Cells；DSS C) 太陽能電池．．．．．．．．．．．．8 2.2 太陽能電池元件運 作原理 ．．．．．．．．．．10 2.2.1 基本太陽能電池運作原理 ．．．．．．．10 2.2.2 決 定太陽能電池的效率因素 ．．．．．． 12 2.3 太陽光譜 ．．．．．．．．．．．．．．．．．16 第三章 TCAD 元件 模擬軟體．．．．．．．．．．．．．． 18 3.1 TCAD 元件模擬軟體介紹．．．．．．．．．． 18 3.2 物理模型．．．．．．．．．．．．．．．．． 19 3.3 載子復合模型．．．．．．．．．．．．．．．
． 21 3.4 光源模擬．．．．．．．．．．．．．．．．． 23 第四章 太陽能電池模擬與結果．．．．．．．．
．．．．．． 24 4.1 前言．．．．．．．．．．．．．．．．．．． 24 4.2 設定材料參數．．．．
．．．．．．．．．．． 25 4.3 改變 i-a-Si 厚度參數 ．．．．．．．．．．．．27 4.4 改變 n-a-Si 厚 度參數．．．．．．．．．．．．30 4.5 改變 BSF i-a-Si 以及BSF p-a-Si 厚度參數．．．32 4.6 改變 i-a-SiGe 能隙參數．．．．．．．．．．．42 4.7 改變 BSF i-a-SiGe 以及BSF p-a-SiGe 能隙參數．44 4.8 模擬結果討論 ．．．．．．．．．．．．．．．46 第五章 結論．．．．．．．．．．．．．．．．．．．．．．47 參考文獻．．．．．．．．．．．．．．．．．．．．．．．．48
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