[PDF] Top 20 Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films

... Transparent and conductive high-preferential c-axis-oriented Al-doped zinc oxide (ZnO:Al, AZO) thin films have been prepared by the sol–gel ...technique on Si(1 0 0) ... See full document

... thin films have been fabricated by spray pyrolysis on a glass ...morphology and electrical properties of the thin films were ...(XRD) and scanning electron microscopy ... See full document

... combination of XRD, AFM and nanoindentation techniques has been carried out to investigate the structural, surface morphological features, and nanomechanical properties of GZO films ... See full document

... that ZnO:Ga thin films were equi-axial polycrystalline in nature, albeit that predominant (0 0 2) orienta- tion and a rougher surface morphology was gradually developed with increasing annealing ... See full document

... Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, ROC Available online 14 September 2006 Abstract A systematic study of ... See full document

... size of either Cu 2+ (~73 pm) or Cu + (~77 pm) is substantially larger than that of Ni 2+ (~69 pm) ...the annealing temperature does have a substantial influence on the film ... See full document

... GaAs and related compounds grown by low-temperature molecular-beam epitaxy 共LT-MBE兲 have attracted much at- tention due to their unique electronic and optical ...As and a high ... See full document

... enlargement of crystallite ...electron concentration that took place along with the increase in annealing temperature, as shown in ...ing temperature, as shown in ...reduction of ... See full document

... in annealing temperature from 450 to 500 ...resistivity and higher average transmittances in the visible ...resistivity and transmittance are more obvious when a TiO 2 buffer layer was ... See full document

... the effects of Cr buffer layers and post-annealing on the properties of titanium- doped zinc oxide (TZO) thin films prepared by radio frequency magnetron ...mobility ... See full document

... doped ZnO thin films. ZnO exhibits a wide range of conductivity; its behavior varies from metallic to ...by doping with ternary elements or by adjusting process ...resistivities ... See full document

... The effects of Gallium doping concentration on the optical prop- erties of GZO thin film growth and were ...300 and 800 nm of the deposited GZO thin films with ... See full document

... that of the 2.5 at.% Cr-doped film. It seems that higher concentration of magnetic ions results in larger magneti- ...2.5 and 5.0 at.% Cr-doped a-IGZO films are highly ... See full document

... the effects of annealing time on the structural and optical properties of sputtered ZnO ...annealed ZnO films show stronger intensity and narrower FWHM ... See full document

... morphology of the samples. For the AFM operation, a constant scan speed of 1 ␮m/s was used, with a con- stant load of 30 nN being applied to the ...optical properties of the annealed ... See full document

... patterns of (a) VO 2 and (b) W x V 1-x O 2 films annealed at 500 °C with 2θ ranging from 26° to ...distance of W x V 1-x O 2 thin films is enlarged due to larger ionic radius of ... See full document

... Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan c Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano ... See full document

... intensity of NBE emission was slightly enhanced by the implantation of nitrogen ...N-implanted concentration, ...N-implanted ZnO film annealed in oxygen atmo- sphere compared to that annealed ... See full document

... stages of crystallization. The crystallization temperature of the first crystalline phase, T x , for the Co-Fe-Zr-B films with various sput- tering power is in the temperature range of ... See full document

... Oxygen annealing effect on field-emission characteristics of hydrothermally synthesized Al-doped ZnO nanowires Jyh-Liang Wang a, ⁎ , Tsang-Yen Hsieh a , Po-Yu Yang b , Chuan-Chou ... See full document