[PDF] Top 20 Numerical analysis on current and optical confinement of III-nitride vertical-cavity surface-emitting lasers

... computation of semiconductor transport equations, the optical gain and mode, the quantum well band structure, was employed to model above mentioned VCSEL ...drift and diffusion of ... See full document

... report on the numerical analysis of the electrical and optical properties of current-injected III-N based vertical-cavity ... See full document

... gap and the promising potential for the optoelectronic devices such as light emitting diodes and laser ...edge emitting lasers have been demonstrated and applied in commercial ... See full document

... the numerical discussion, it is observed that the InAlGaAs QWs can provide a lower transparency carrier concentration and a higher differential ...concentration of the InAlGaAs QWs increased with ... See full document

... structure of the present oxide-confined VCSELs and the methods used to measure the far- and near-field patterns are similar to those described by [12], except that the lateral confinement is ... See full document

... properties of the com- pressively strained InGaAsP quantum well structures emitting at 840 nm by solving the 6 × 6 k · p ...high optical gain and differential gain, and low transparency ... See full document

... µm and packaged into the ...the optical microscopy image of a GaN-based VCSEL sample device at an injection current of 1 ...K and tested under CW current injection condi- ... See full document

... focused on the carrier blocking effect on the VCSEL devices by employing a high-bandgap layer on the p- side of the QW active ...output and voltage versus current (L–I –V ) ... See full document

... INTRODUCTION Vertical-cavity surface-emitting lasers (VCSELs) are very appealing light sources for use in high-capacity commu- ...benefits of VCSELs include single ... See full document

... DBR of 20.5 pairs of Al 0.12 Ga 0.88 As/Al 0.9 Ga 0.1 As. The ϳ-cavity consists of three quantum wells imbedding in top and bottom grading Al x Ga 1-x As ...0.6) confinement ... See full document

... advent of oxide-confined structures that promise a further reduction of the threshold current by a more efficient current confinement and low-loss optical ... See full document

... Results and Discussion Figure 2a shows continuous wave 共CW兲 light-current-voltage 共L-I-V兲 output of the InGaAs VCSEL without the PhC ...advantage of a gain-guided ion-implanted VCSEL is that ... See full document

... finite. III. EXPERIMENTAL RESULTS AND THEORETICAL ANALYSIS The experimental VCSEL devices were grown with metal- organic chemical vapor ...consists of a multiple quantum-well active region ... See full document

... exploration of the polarization dynamics of the large-aperture VCSELs has not been performed ...order of the lasing mode in VCSELs is pri- marily determined by the frequency detuning Δω ω ω = − , c ... See full document

... leakage current. The n-contact was formed at the bottom of the n + -GaAs ...patterns of photonic crystal with a single-point defect in the center were defined within the p-contact ring us- ing ... See full document

... PC-VCSEL and the etching depth of the holes is about 17 pairs out of 22 pairs of the top DBR ...types of apertures in this device, we decouple the effects of the current ... See full document

... , and Cheng Chung Lee 1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan 1 Thin Film Technology Center ... See full document

... effective current injection is required for the low threshold current operation since the current leak- age paths can be vertically passing through the InGaN MQW and/or horizontally extending ... See full document

... fabrication and development of GaN-based VCSELs from optical pumping to electrical ...insertion of SL layers and using the high reflective Ta 2 O 5 /SiO 2 as dielectric mirror to ... See full document

... peaks and eye diagram of 0.98-µm QD VCSEL at a wide range of temperatures (−45 ◦ C– 20 ◦ ...root of the injected current relative to threshold before saturation takes ...emissions ... See full document