[PDF] Top 20 Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers

... INTRODUCTION Vertical-cavity surface-emitting lasers (VCSELs) are very appealing light sources for use in high-capacity commu- ...benefits of VCSELs include single ... See full document

... near-field emission profiles of oxide confined GaAs vertical cavity surface emitting lasers (VCSELs) with 20µm aperture have been investigated at different ... See full document

... Recently, vertical-cavity surface-emitting lasers (VCSELs) have been proposed to be an alternative pump source ...advantages of VCSELs over edge-emitting lasers are ... See full document

... blue/violet vertical-cavity surface-emitting lasers 共VCSELs兲 have attracted much attention due to many advantageous properties over edge-emitting lasers, including ... See full document

... mm oxide aperture. The diameter of the oxide aperture was determined by dark-field microscopy and the size of the spontaneous emission ...device surface was quasi-planar ... See full document

... the emission spectra far above lasing threshold to analyze the eigenvalue spacing distribution and confirmed the oxide-confined VCSELs to be fascinating devices for wave chaos ...tens of ... See full document

... transverse patterns, it is helpful to simplify the VCSEL structure ...square-shaped oxide aperture defined the lateral billiard ...direction of vertical emission and k t is the ... See full document

... energy of 55 nJ and a high degree of polarization of ...high spontaneous emission coupling factor of 6 × 10 −2 is estimated from the approximation equa- ...operation of an ... See full document

... the oxide aperture (see ...the emission in the four corners, which might explain the preference of the device to emit at that particular ...the emission of the spot does not seem to be ... See full document

... are oxide-confined top-emitting VCSELs emitting at around 780 ...cross-section of a  40 m. The cavity, con- sisting of three 8 nm thick Al 0:1 Ga 0:9 As quantum wells ... See full document

... these patterns is perhaps the occur- rence of instabilities and symmetry ...In lasers, the y- junction structured pattern observed so far was in the interferogram of optical ...broad-area ... See full document

... 2007. Vertical-cavity surface-emitting lasers 共VCSELs兲 have attracted much attention in recent ...feedback lasers because of their easy array scaling and packaging, low ... See full document

... computation of semiconductor transport equations, the optical gain and mode, the quantum well band structure, was employed to model above mentioned VCSEL ...diffusion of electrons and holes, built-in ... See full document

... development of GaN-based VCSELs from optical pumping to electrical ...insertion of SL layers and using the high reflective Ta 2 O 5 /SiO 2 as dielectric mirror to achieved laser operation under optical ... See full document

... structure of the present oxide-confined VCSELs and the methods used to measure the far- and near-field patterns are similar to those described by [12], except that the lateral confinement is ... See full document

... peak emission wavelength of the MQWs for the as-grown sample was obtained to be 416 ...consisting of 6 pairs of SiO 2 and TiO 2 was evaporated on the top of GaN-based ...center ... See full document

... MODULATION OF InGaAs : Sb–GaAs–GaAsP QW VCSELs WITH 1.27- m EMISSION WAVELENGTH 529 ...Comparison of the PL spectra of InGaAs with different In composition and In Ga As with Sb ...section ... See full document

... influence of frequency-selective feedback combined with Fourier ...steps of about 0.24 nm, corresponding to −120 GHz. The effect of the filtering is most apparent in comparison with figure ...stripe ... See full document

... introduction of the cavity effect by applying a Fabry–Perot filter in the ...results of our proposed model agree well with experimental data for different operations of signal power, bias ... See full document

... out of the current ...the vertical current path. As a re- sult, the introduction of polarization-matched InGaN/AlInGaN MQWs could independently control the interface polarization charges and bandgap, ... See full document