[PDF] Top 20 Statistical study on the states in the low-temperature poly-silicon films with thin film transistors
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Statistical study on the states in the low-temperature poly-silicon films with thin film transistors
... recrystallized low temperature poly-silicon films have attracted attention for their applications in thin-film transistors (TFTs), which are widely used ... See full document
4
Plasma-induced damage on the performance and reliability of low-temperature polycrystalline silicon thin-film transistors
... 2006 The Electrochemical ...Polycrystalline silicon thin-film transistors 共poly-Si TFTs兲 are key devices in flat-panel displays 共FPDs兲, such as active-matrix liq- uid ... See full document
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Study on electrical degradation of p-type low-temperature polycrystalline silicon thin film transistors with C-V measurement analysis
... recrystallized low-temperature poly-silicon (LTPS) films have attracted attention for their application in thin-film transistors (TFTs), which are widely ... See full document
4
Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids
... for the first time to effectively passivate the defect states in hydrogenated amorphous-silicon thin-film transis- tors (a-Si:H TFTs) at low temperature (150 ... See full document
3
Bias temperature instabilities for low-temperature polycrystalline silicon complementary thin-film transistors
... bias temperature instability 共NBTI兲 and positive bias temperature instability 共PBTI兲 have been found to be important issues for ...associated with the generation of both interface trap ... See full document
4
Degradation of Low Temperature Polycrystalline Silicon Thin Film Transistors under Negative Bias Temperature Instability Stress with Illumination Effect
... Further, the increase in N trap causes the leakage current to increase due to trap-assisted tunneling in the drain depletion ...shows the schematic diagram of the device ... See full document
5
Process induced instability and reliability issues in low temperature poly-Si thin film transistors
... TFTs with 1.5um LDD structure were fabricated in this ...deposited on a buffer layer and crystallized by excimer laser ...deposited with an equivalent 100nm-thick SiO 2 ...as the gate ... See full document
2
Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
... for the study of channel-film-thickness effect. Then, the α-Si layer was recrystallized by SPC process in a furnace at 600 ◦ C for 24 h in N 2 ...of the channel ... See full document
5
Plasma damage-enhanced negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors
... bias temperature instability (NBTI) be accelerated by plasma damage in low-temperature polycrystalline silicon thin-film tran- sistors (LTPS TFTs) is ...presented. ... See full document
3
High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization
... TFTs with lateral grain growth and the non-SA BG ...used in defining the source/drain regions which result in the offset ...region. The offset length in non-SA TFT ... See full document
4
A reliability model for low-temperature polycrystalline silicon thin-film transistors
... fabricated on glass substrates were used in this ...amorphous silicon layer was deposited by PECVD and crystallized into a polycrystalline silicon film through excimer laser ...defining ... See full document
3
Effect of chemical mechanical polish process on low-temperature poly-SiGe thin-film transistors
... Then the a-SiGe films were transformed into polysilicon phase by a solid-phase re-crystallization (SPC) treatment at 550℃ for ...12hr. The films were then polished by CMP process. The ... See full document
2
Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors
... explain the measured ∆V th and that ∆N ox must be taken into ...expanding the model proposed for bulk-Si MOSFETs [17], we introduce a model to explain the NBTI degradation mechanism for LTPS ...TFTs. ... See full document
3
Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors
... Polycrystalline silicon thin-film transistors 共poly-Si TFTs 兲 are attractive for many applications, such as the switching devices as well as peripheral driving circuits in ... See full document
4
High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
... shows the schematic illustration of lateral grain growth mechanism using plateau structure of a-Si thin film with excimer laser ...When the excimer laser irradiation is applied on ... See full document
7
A New Pixel Circuit for Driving Organic Light-Emitting Diode With Low Temperature Polycrystalline Silicon Thin-Film Transistors
... is low-temperature poly-Si TFTs driving cir- cuits for ...assistant in the Materials Research Laboratory, Industrial Technology Research Institute, Taiwan from 1981 to ...Lecturer ... See full document
5
Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets
... for the 1–2 min O 2 plasma process. Furthermore, upon increasing the duration of the plasma power to 3 to 5 min or longer, the maximal output drain current at a gate voltage of 28 V is rst ... See full document
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Anomalous on-current and subthreshold swing improvement in low-temperature polycrystalline-silicon thin-film transistors under Gate bias stress
... Then the a-Si films were crystallized by a 308 nm XeCl excimer laser with a line-shaped beam power of 350 mJ /cm 2 .... The 100 nm thick gate insulator was deposited by tetraethyl ... See full document
4
A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
... improve the dielectric prop- erties of sputter-deposited hafnium oxide films and passivate the defect states in hydrogenated amorphous-silicon TFTs 共a-Si:H ...11,12 In ... See full document
4
Oxide Thinning and Structure Scaling Down Effect of Low-Temperature Poly-Si Thin-Film Transistors
... comprehensive study of scaling down effects of LTPS-TFTs with various gate oxide thicknesses, channel length and width are studied ...affects the electrical performance of LTPS-TFTs, including ... See full document
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