In the study of high-k gate dielectrics related to hafnium oxide, the superior resistance against Cu diffusion after BTS test is observed. The presence of Cu metal in direct contact with HfO2 has negligible impact on the reliability of the HfO2 capacitor. However, the transistor has not been processed yet. The next step of this study is the achievement of the MOSFET fabrication, followed with the device characterization and verification of the findings in previous work.
The MIM capacitors with HfO2 gate dielectric have been studied. The behavior of the capacitors related to different metal electrodes exhibits somehow slightly variations. Although such difference can be roughly imagined from the interface formed on the dielectric, the mechanism behind is still not understood. Further experiments and analyses are required to clarify the interaction between the metal electrode and the dielectric, especially for the Cu metal that connecting to the MIM capacitors in the BEOL.
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